• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권7호
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• pp.298-304
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• 2002

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. The ZnO films consist of eight constituent (Zn and O) isotropes, of which four are transmutable by neutron-irradiation; $^{64}$ , $^{68}$ Zn, $^{70}$ Zn and $^{18}$ O were expected to transmute into $^{65}$ Cu, $^{69}$ Ga, $^{71}$ Ga, and $^{19}$ F, respectively. The concentrations of these transmuted atoms were estimated in this study by considering natural abundance, neutron fluence and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of the ZnO thin films, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation confirmed the existence of $^{65}$ Cu in the ZnO, but it could not do the formation of the other two. In this paper, the emission mechanism of Cu impurities is described and the reason for the absence of the Ga- or F-associated PL peaks is discussed as well.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• 한국세라믹학회지
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• 제29권5호
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• pp.383-390
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• 1992

We investigated the effect of substrate on the properties of the Ni-Zn-Cu ferrite thin films deposited on SiO2 (1000∼3000${\AA}$) / Si (100) substrate at various conditions by rf magnetron sputtering. A disktype Ni-Zn-Cu ferrite sintered by conventional ceramic process and argon gas were used as a target and a sputtering gas, repectively. The compositions of the thin films measured by EPMA were similar to target composition (Fe: 65.8 at%, Ni: 12.7 at%, Cu: 6.7 at%, Zn: 14.8 at%) irrespective of substrate temperature. Amorphous thin films were deposited when substrate was not intentionally heated, but the films came to crystallize with increasing substrate temperature, and crystalline thin films were deposited at substrate temperature above 200$^{\circ}C$. Below 250$^{\circ}C$ saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) of the ferrite thin film increased with the substrate temperature due to the increase of grain size and the improvement of crystallinity. And above 250$^{\circ}C$, Ms, Mr increased slightly, but Hc of the amorphous thin films increased due to crystallization, whereas that of the crystalline thin films decreased because of grain growth and stress release.

• 한국재료학회지
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• 제14권1호
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• 한국진공학회지
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• 제4권2호
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• pp.172-176
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• 1995

$YBa_2Cu_3O_{7-y}$ thin films have been prepared on MgO(100)substrates placed on-axis to the target by dc magnetron sputtering in a variety of oxygen/argon gas pressures with different substrate-target distances. We found that films with the c-axis perpendicular to the substrate deposited in an optimally high gas pressure with on-axis substrate-target configuration do. Increasing the substrate-target distance was found to be effetive in reducing the resputtering effect and enhancing superconductivity of films, but not so much $\alpha$-and c-axis growth of YMCO films on MgO substrates. Dependences of the Tc, the rationj of resistances at 300K and 100K, and the X-ray diffraction pattern on the gas pressure and the substrate target distance are described.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• 열처리공학회지
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• 제36권3호
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• pp.115-120
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• 2023

ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10^-3 Ωcm to 1.18 × 10^-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

• 한국재료학회지
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• 제30권4호
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• pp.204-210
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• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.