• Title/Summary/Keyword: CuInSe2

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Performance Improvement by Controlling Se/metal Ratio and Na2S Post Deposition Treatment in Cu(In,Ga)3Se5 Thin-Film Solar cell

  • Cui, Hui-Ling;Kim, Seung Tae;Chalapathy, R.B.V.;Kim, Ji Hye;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.7 no.4
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    • pp.103-110
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    • 2019
  • Cu(In,Ga)3Se5 (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu1.05(In0.59,Ga0.41)3Sey, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na2S post deposition treatment. Our results indicate that Na2S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

The effects of Se evaporation temperature on CIS absorber layer fabricated by non-vacuum process (Se 증발온도가 비진공 공정으로 제조한 CIS 광흡수층에 미치는 영향)

  • Park, Myoung-Guk;Ahn, Se-Jin;Yoon, Jea-Ho;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.441-443
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    • 2008
  • A non-vacuum process for fabrication of $CuInSe_2$ (CIS) absorber layer from the corresponding Cu, In solution precursors was described. Cu, In solution precursors was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$ and methanol. The Cu, In solution precursors were mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CI/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIS absorber layer. The CIS absorber layer selenized at $530^{\circ}C$ substrate temperature for 30 min with various Se gas evaporation temperature was characterized by XRD, SEM, EDS.

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Characterization of $Cu_2ZnSnSe_4$ thin film produced by selenization of metallic precursor (금속 프리커서의 셀렌화에 의한 $Cu_2ZnSnSe_4$ 박막의 특성)

  • Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Jang, Yun-Jung;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.85.2-85.2
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    • 2010
  • $Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

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Synthesis of binary Cu-Se and In-Se nanoparticle inks using cherry blossom gum for CuInSe2 thin film solar cell applications

  • Pejjai, Babu;Reddy, Vasudeva Reddy Minnam;Seku, Kondaiah;Cho, Haeyun;Pallavolu, Mohan Reddy;Le, Trang Thi Thuy;Jeong, Dong-seob;Kotte, Tulasi Ramakrishna Reddy;Park, Chinho
    • Korean Journal of Chemical Engineering
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    • v.35 no.12
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    • pp.2430-2441
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    • 2018
  • Selenium (Se)-rich binary Cu-Se and In-Se nanoparticles (NPs) were synthesized by a modified heat-up method at low temperature ($110^{\circ}C$) using the gum exudates from a cherry blossom tree. Coating of CISe absorber layer was carried out using Se-rich binary Cu-Se and In-Se NPs ink without the use of any external binder. Our results indicated that the gum used in the synthesis played beneficial roles such as reducing and capping agent. In addition, the gum also served as a natural binder in the coating of CISe absorber layer. The CISe absorber layer was integrated into the solar cell, which showed a power conversion efficiency (PCE) of 0.37%. The possible reasons for low PCE of the present solar cells and the steps needed for further improvement of PCE were discussed. Although the obtained PCE is low, the present strategy opens a new path for the fabrication of eco-friendly CISe NPs solar cell by a relatively chief non-vacuum method.

Molybdenum Oxides as Diffusion Barrier Layers against MoSe2 Formation in A Nonvacuum Process for CuInSe2 Solar Cells (비진공법 CuInSe2 태양전지에서 MoSe2의 생성을 억제하기 위한 산화 몰리브데늄 확산장벽 층)

  • Lee, Byung-Seok;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.85-90
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    • 2015
  • Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

Preperation of CuInSe2 Nanoparticles by Solution Process Using Precyrsors

  • Choe, Ha-Na;Lee, Seon-Suk;Jeong, Taek-Mo;Kim, Chang-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.376-376
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    • 2011
  • I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

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On Formation of Residual Carbon Layer in CuInSe2 Thin Films Formed via direct Solution Coating Process (직접 용액 코팅법에 의해 제조한 CuInSe2 에 잔존하는 탄소 불순물층 형성에 관한 연구)

  • Ahn, SeJin;Rehan, Shanza;Eo, Young-Joo;Gwak, Jihye;Yoon, Kyunghoon;Cho, Ara
    • Current Photovoltaic Research
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    • v.2 no.1
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    • pp.36-39
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    • 2014
  • Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

The Properties of HfO2 Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method

  • Jeong, Woon-Jo;Ahn, Ho-Geun;Kim, Young-Jun;Yang, Hyeon-Hun;Park, Gye-Choon
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.2
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    • pp.89-92
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    • 2007
  • $CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

Effect of Dietary Organic or Inorganic Minerals (Selenium and Copper) on Layer's Production and Their Transfer into the Egg (사료 내 유기태 및 무기태 미네랄(셀레늄, 구리)의 수준별 첨가가 산란계의 생산성과 계란 내 이행에 미치는 영향)

  • Park, T.S.;Kim, J.Y.;You, S.J.;Lee, B.K.;Kim, J.M.;Kim, E.J.;Ahn, B.K.;Kang, C.W.
    • Korean Journal of Poultry Science
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    • v.36 no.2
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    • pp.103-110
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    • 2009
  • This experiment was conducted using 350 Lohmann Brown layers (67 weeks of age) to evaluate the dietary effect of organic or inorganic Se and Cu on their contents in chicken eggs. The layers were divided into seven groups and fed a commercial diet or one of the six experimental diets containing different levels of Se and Cu (T1, 0.3ppm organic Se; T2, 1.0ppm organic Se; T3, 1.0ppm inorganic Se; T4, 125ppm organic Cu; T5, 250ppm organic Cu; and T6, 250ppm inorganic Cu) for 5 weeks. No significant differences were observed in egg production and its qualities among groups. The contents of blood cholesterol in the birds fed various levels of Se and Cu were not significantly different as compared to control. Se contents in eggs were linearly increased as dietary Se levels increased for both sources, but Se contents from the groups fed organic Se were slightly higher than those fed inorganic Se. Sensory characteristics of eggs were not influenced by dietary treatments. In conclusion, Se contents in eggs were linearly increased as dietary levels of organic or inorganic Se increased, but eggs in layers fed the diet containing organic Se did not show higher Se contents than those in birds fed dietary inorganic Se.

Electrodeposition of CuInSe2 Photovoltaic Thin Films and Growth Morphology (CuInSe2 태양전지 박막의 전해증착 및 성장형상)

  • Gho, Jung-Hwan;Kim, Myung-Han
    • Korean Journal of Materials Research
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    • v.20 no.1
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    • pp.12-18
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    • 2010
  • $CuInSe_2$ (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ ions, depending on deposition parameters such as deposition potential (-0.4 to -0.8 V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition of Cu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomic ratio for the elements, was achieved at -0.5 V (SCE) and pH 1.8. The as-deposited films showed low crystallinity and were annealed at 300 to $500^{\circ}C$ for 30 min to improve crystallization. The surface morphologies, microstructures, and crystallographic structures of the annealed films as well as the as-deposited films were analyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thin films in the as-deposited state and decreased in size and number with increasing annealing temperatures. Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thin films were improved with the annealing process.