• 지식경영연구
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• 제16권2호
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• pp.193-212
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• 2015

A corporate university (CU) is an educational institution established by an organization whose primary purpose is not education. Traditionally, a CU is considered a training facility to improve organizational performance. However, the proliferation of the CU has engendered its diverse purposes, roles, and forms. This study attempts to identify three types of the existing CUs: (a) a CU to improve organizational performance; (b) a CU to satisfy employees' learning needs; and (c) a CU to develop a competent national workforce. Also, this study suggests a holistic CU model including the three CU types. In order to transform a CU to a multifunctional CU embracing all three types of CU, organizations should (a) provide communication and collaboration channels, (b) present clear organizational goals, (c) establish organizational policies/systems to encourage learning in CUs, and (d) devise an effective approach to evaluate the impact of CUs. Organization' s critical roles in the development of CUs can assist CUs in becoming the core of knowledge management.

• Korean Chemical Engineering Research
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• 제52권2호
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• pp.214-218
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• 2014

본 연구에서는 용매열합성법(solvothermal method)을 이용하여 매크로 기공의 알루미나 튜브 지지체 위에 나노기공 $Cu_3(BTC)_2$ 분리막을 제조하였다. In-situ 용매열합성법을 이용하는 경우, 매크로 기공의 알루미나 지지체 위에 균일한 핵생성과 성장을 통해 연속적이고 균열이 없는 $Cu_3(BTC)_2$ 층을 형성하기 어렵다. 본 연구에서는 용매열합성 전에 알루미나 지지체 표면을 $200^{\circ}C$로 가열한 상태에서 Cu 전구체 용액을 분무하여 지지체 표면을 개질한 후, 용매열합성법을 수행하여 연속적이고 균열이 없는 $Cu_3(BTC)_2$ 튜브형 분리막을 제조할 수 있었다. 합성된 $Cu_3(BTC)_2$ 분리막은 XRD, FE-SEM 및 기체투과 실험 등을 통해 분석하였다. $5{\mu}m$의 두께를 가진 $Cu_3(BTC)_2$ 튜브형 분리막을 통한 단일기체 투과실험 결과, $80^{\circ}C$에서 $H_2$가 가지는 투과도는 $7.8{\times}10^{-7}mol/s{\cdot}m^2{\cdot}Pa$이고, $H_2/N_2$, $H_2/CO_2$의 이상선택도는 각각 11.94, 12.82로 계산되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 A
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• pp.12-15
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• 1993

The correlation between electrical conduction and dielectric relaxation properties of copper ion conducting glasses is discussed. The glasses were prepared in the system $CuI-Cu_2S-Cu_2O-MoO_3$ using rapid quenching technique. These glasses have high ionic conductivities at room temperature in the range of $10^{\circ}$[S/m], and the conductivities increase with increasing CuI content. The activation energies for conduction are 0.26 - 0.57 eV. The dielectric relaxation times are 1 - 10uS, and the activation energy for ion jumping are 0.18 - 0.41eV. It is shown that the tendency of conduction properties depending on composition of the glass is similar those of dilectric relaxation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.546-549
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• 1993

The correlation between electrical conduct ion and dielectric relaxation properties of copper ion conducting glasses is discussed. The glasses were prepared in the system $CuI-Cu_2S-Cu_2O-MoO_3$ using rapid quenching technique. These glasses have high ionic conductivities at room temperature in the range of $10^{circ}$[S/m], and the conductivities increase with increasing CuI content. The activation energies for conduction are 0.26-0.57 eV. The dielectric relaxation times are 1-10uS, and the activation energy for ion jumping are 0.18-0.41eV. It is shown that the tendency of conduction properties depending on composition of the glass is similar those of dilectric relaxation.

• Journal of Welding and Joining
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• 제13권3호
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• pp.55-64
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• 1995

Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

• 한국세라믹학회지
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• 제50권6호
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• pp.518-522
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• 2013

This study investigatesthe coloration mechanism by identifying the factor that affects thered coloration of copper red glazesin traditional Korean ceramics. The characteristics of the reduction-fired copper red glaze's sections are analyzed using an optical microscope, Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The sections observed using an optical microscope are divided into domains of surface, red-bubble, and red band. According to the Raman micro spectroscopy analysis results, the major characteristic peak is identified as silicate in all three domains, and the intensity of $Cu_2O$ increases toward the red band. In addition, it is confirmed that the most abundant CuO exists in the glaze bubbles. Moreover, CuO and $Cu_2O$ exist as fine particles in a dispersed state in the surface domain. Thus, Cu combined with oxygen is distributed evenly throughout the copper red glaze, and $Cu_2O$ is more concentrated toward the interface between body and glaze. It is also confirmed that CuO is concentrated around the bubbles. Therefore, it is concluded that the red coloration of the copper red glaze is revealed not only through metallic Cu but also through $Cu_2O$ and CuO.

• 한국재료학회지
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• 제14권11호
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• 한국결정성장학회지
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• 제4권2호
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• pp.148-156
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• 1994

$YBa_2Cu_3O_X$상 부근의 3가지 조성을 skull melting 방법으로 4MHz에서 녹인 후 방향적 결정성장을 시켰다. 일반적인 무기재료 공정방법으로 처리된 분말을 skull에 넣은 후 $1200^{\circ}C$부근에서 용융시켰다. 사용한 성장속도는 4~0.25 cm/hr이었으며, 금속현미경, X-선 회절기, EDX 등을 이용해서 제조된 시편을 조사하여 사용한 분말의 조성에 따른 시편의 미세조직의 변화를 관찰하였다. $YBa_2Cu_7O_X$와 $YBa_5Cu_{11}O_X$ 시편의 대표적인 미세조직은 성장방향으로 자라난 침상형태의 $YBa_2Cu_3O_X$와 $Y_2BaCuO_5$ 상이 $CuO-BaCuO_2$의 공융 조직상 사이에 생성된 것으로 나타났다.