• Journal of Advanced Marine Engineering and Technology
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• v.26 no.1
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• pp.99-107
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• 2002

Recently all kinds of structural materials are subjected to the severe corrosive environment. Especially corrosion problems of heat exchanger such as galvanic corrosion, erosion and cavitation raised by both contaminated solution and high velocity of fluid to increase cooling effect of heat exchanger have been frequently reported in these days. In this study two kinds of sheet materials and five kinds of tube materials are used for galvanic corrosion characteristics and their corrosion current density calculation. The tube materials having the most galvanic corrosion resistance between tube and sheet of heat exchanger were Al Brass(68700) and Al Brass(C6872TS) and although Ti tube predominantly indicated the highest individual corrosion resistance among those five tube materials. it appeared that Ti tube can be allowed as sheet materials to get galvanic corrosion easily. However it is considered that Cu-Ni tube materials is not only easy to produce galvanic corrosion significantly between tube and sheet regardless of kinds of sheet materials but also is appeared considerably its own high corrosion current density

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.

• Resources Recycling
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• v.7 no.4
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• pp.35-42
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• 1998

Surface mount technology is the biggest theme in the area of deιIronic component. To miniatunze an electronic component, s such as ferrite chip inductor, the cer뼈lic wet process for green-sheet lamination and/or screen printing method through a s solvent medium system is widely used. The preparation and characterization of NiCuZn Ferrite (NCZF) shurry and the green s sheet using the water mixed binder system has been studied. The 21 vol% of NCZF slurry was prepared by a ball milling. The p polyacrylic vinyl copolymer (Mw; 60,000) was used as a binder. Th$\xi$ mixture of distilled water, isopropyl alcohol (IPA) and 2l butoxy ethanol was used as a dispersion medium. The water content of medium varied from about 40% to 80%. As the results. Thc disp$\xi$rston stability of the NCZF slurry was attributed to the free polymer rather than the electrostatic force of the particle. T The viscosity of the NCZF slurry was greatly depended on the ratio of water content in the medium.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.791-798
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• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.344-345
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• 2015

Various concentration of copper was dopped in Fe-35%Ni thin sheet by electroforming and their electromagnetic, surface properties were determined. Microstructure observation by scanning electron microscopy revealed that the thin sheet had columnar grains with about 150 nm long. Phase analysis by X-ray diffractometry revealed that the alloy thin sheets were fine crystalline. The average surface roughnesses measured by atomic force microscopy (AFM) were about 14.38 nm. Nano hardnesses determined by tribo-nano indenter were 4.13 GPa. The surface resistances were 2.28 ohm/sq. The maximum magnetization, residual magnetization and coercive force depended on the copper concentration.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.739-743
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• 2011

Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.333-340
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• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.459-464
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• 2012

We investigated cleaning effects using $NH_4OH$ solution on the surface of Cu film. A 20 nm Cu film was deposited on Ti / p-Si (100) by sputter deposition and was exposed to air for growth of the native Cu oxide. In order to remove the Cu native oxide, an $NH_4OH$ cleaning process with and without TS-40A pre-treatment was carried out. After the $NH_4OH$ cleaning without TS-40A pretreatment, the sheet resistance Rs of the Cu film and the surface morphology changed slightly(${\Delta}Rs:{\sim}10m{\Omega}/sq.$). On the other hand, after $NH_4OH$ cleaning with TS-40A pretreatment, the Rs of the Cu film changed abruptly (${\Delta}Rs:till{\sim}700m{\Omega}/sq.$); in addition, cracks showed on the surface of the Cu film. According to XPS results, Si ingredient was detected on the surface of all Cu films pretreated with TS-40A. This Si ingredient(a kind of silicate) may result from the TS-40A solution, because sodium metasilicate is included in TS-40A as an alkaline degreasing agent. Finally, we found that the $NH_4OH$ cleaning process without pretreatment using an alkaline cleanser containing a silicate ingredient is more useful at removing Cu oxides on Cu film. In addition, we found that in the $NH_4OH$ cleaning process, an alkaline cleanser like Metex TS-40A, containing sodium metasilicate, can cause cracks on the surface of Cu film.