• Title/Summary/Keyword: Cu-ligands

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New Ruthenium Complexes for Semiconductor Device Using Atomic Layer Deposition

  • Jung, Eun Ae;Han, Jeong Hwan;Park, Bo Keun;Jeon, Dong Ju;Kim, Chang Gyoun;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.363-363
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    • 2014
  • Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

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Preconcentration and Extraction of Copper on Activated Carbon Using 4-Amino-2, 3-dimethyl-1-phenyl-3-pyrazoline or 4-(4-methoxybenzylidenimin) thiophenole (4-Amino-2,3-dimethyl-1-phenyl-3-pyrazoline 또는 4-(4-Methoxybenzylidenimin)thiophenole을 이용한 활성탄에서의 구리의 예비 농축 및 추출)

  • Ghaedi, Mehrorang;Ahmadi, Farshid;Karimi, Hajir;Gharaghani, Shiva
    • Journal of the Korean Chemical Society
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    • v.50 no.1
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    • pp.23-31
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    • 2006
  • carbon modified methods were used for the preconcentration and determination of copper in some real samples using the flame atomic absorption spectrometry. The copper ions was adsorbed quantitatively on the activated carbon due to their complexation with 4- amino-2, 3-dimethyl-1-phenyl-3-pyrazoline (ADMPP) or 4-(4- methoxybenzylidenimin) thiophenole (MBITP). The adsorbed copper on solid phase was eluted quantitatively using small amount of nitric acid. The influence of important parameters including pH, amount of carrier, flow rate, amount of activated carbon and type and concentration of eluting agent for obtaining maximum recovery were investigated. The methods based on ADMPP and MBITP at optimum conditions is linear over concentration range of 0.05-1.5 g mL-1 and 0.05-1.2 g mL-1 of copper with correlation coefficient of 0.9997 and 0.9994 and both detection limit of 1.4 ng mL-1, respectively. The preconcentration leads to enrichment factor of 310 and break through volume of 1550 mL for both ligands. The method has a good tolerance limit of interfering ion and a selectivity that has been successfully applied for the determination of copper content in real sample such as tap, spring, river and waste water.

Effects of Ionic strength and Anion species on Heavy Metal Adsorption by Zeolite (Ionic Strength 및 공존(共存) 음(陰)Ion이 Zeolite에 의(依)한 중금속(重金屬)의 흡착(吸着)에 미치는 영향(影響))

  • Lee, Jyung-Jae;Park, Byoung-Yoon;Choi, Jyung
    • Korean Journal of Environmental Agriculture
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    • v.7 no.2
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    • pp.96-101
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    • 1988
  • It is important to assess the effects of ionic strength and type of anions when studying the adsorption of heavy metals on zeolite because the background salt may complex with heavy metals and compete for adsorption sites. This experiment was carried out to determine the effect of ionic strength and anion species($Cl^-$, $SO^{2-}\;_4$, and $ClO^-\;_4$) on heavy metal adsorption. Heavy metal adsorption by zeolite from solutions in the range of 10 to 50ppm was studied in the presence of NaCl, $Na_2SO_4$ and $NaClO_4$, with different concentrations. The ionic strength ranged from 0.01 to 1.00. Adsorption of heavy metal cations could be described by the Freundlich isotherm equation. Increasing the ionic strength of equilibrium solutions, the amounts of heavy metal adsorbed on the zeolite surfaces decreased in all three of the anion systems. This fact could be attributed to the competition of background salt cation and the decrease in initial activity of heavy metal cations. In the presence of Cl anion, less adsorption resulted than in the presence of $SO_4$ or $ClO_4$ anions of the same ionic strength, indicating the presence of uncharged and negatively charged complexes of heavy metal with Cl ligands.

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