• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.607-613
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• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

• International Journal of Safety
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• v.1 no.1
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• pp.52-57
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• 2002

The Decomposition of NO$_2$ (nitrogen dioxide), one of the Hazardous Air Pollutant (HAP), was studied by utilizing the SPCP (Surface induced discharge Plasma Chemical Processing) reactor so as to obtain optimum process variables and maximum decomposition efficiencies. Experimental results showed that for the frequency of 10kHz, the highest deco position efficiency of 84.7% for NO$_2$ was observed at the power consumptions of 20W. The decomposition efficiency of $NO_2$ was found to be: 1) proportional to the residence times, and inversely proportional to the initial concentrations of $NO_2$; 2) the maximum when the electrode diameter was 3mm; 3) influenced by the electrode material, decreasing in the order of W>Cu>Al; and 4) proportional to the $CH_4$ content, due to which the highest efficiency of 98% was obtained with almost all the $NO_2$ removed.

• Journal of the Korean Society of Safety
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• v.23 no.5
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• pp.54-60
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• 2008

The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1687-1689
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• 1998

In this work, the behaviours of conducting wire type particles within the coaxial electrode gap energized with high ac voltage have been systematically investigated using charge simulation method. For this, spheroidal charge is adopted as a image charge for the CSM analysis in order to calculate the acquired charge of the particles which are erected on the surface of the outer electrode. For this purpose, the effects of the lengths and diameters of Cu, Al particles in gas insulated system have been studied by a numerical computation and particle lifting voltage, lifting field, breakdown voltage, acquired charge and travelling distance have been considered. From this, we understand that the particle behaviours have different characteristics according to the particle lengths and diameters. And a possible countermeasure, based on the proposed simulation, has been provided with a view to estimating the flashover voltage of $SF_6$ gas under the 1 atm.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.61-68
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• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

• Progress in Superconductivity
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• v.2 no.2
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.19-22
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• 2004

A 30-inch WQXGA+ TFT-LCD Monitor has been developed based on in-plane switching mode with multi-domain. This product adopts Cu electrode which, in spite of low resistivity, was not applied to TFT LCD products because of productivity and reliability problems etc. This low resistivity material makes it possible to clear the problem caused by line delay in such high resolution TFT-LCDs. As a results of successful adoption of innovative materials and technologies, our world's largest TFT-LCD Monitor has best performance for high information display.