• Journal of Environmental Science International
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• v.20 no.5
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• pp.623-630
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• 2011

This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical) by using dielectric barrier discharge (DBD) plasma. The DBD plasma reactor of this study consisted of a quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode. The effect of shape (rod, spring and pipe) of ground electrode, diameter (9~30 mm) of ground electrode of spring shape and inside diameter (4~13 mm) of quartz tube, electrode diameter (1~4 mm), electrode materials (SUS, Ti, iron, Cu and W), height difference of discharge and ground electrode (1~15.5 cm) and gas flow rate (1~7 L/min) were evaluated. The experimental results showed that shape of ground electrode and materials of ground and discharge electrode were not influenced the RNO degradation. The thinner the diameter of discharge and ground electrode, the higher RNO degradation rate observed. The effect of height gap of discharge between ground electrode on RNO degradation was not high within the experimented value. Among the experimented parameters, inside diameter of quartz tube and gas flow rate were most important parameters which are influenced the decomposition of RNO. Optimum inside diameter of quartz tube and gas flow rate were 7 mm and 4 L/min, respectively.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.945-950
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• 2001

Vacuum interrupters that is used in various switchgear components such as circuit breakers, distribution switches, contactors, etc. spreads the arc uniformly over the surface of the contacts. The electrode of vacuum interrupters is used sintered Cu-Cr material satisfied with good electrical and mechanical characteristics. Because the closing velocity is 1-3m/s, the deformation of the material of electrodes depends on the strain rate and the dynamic behavior of the sintered Cu-Cr material is a key to investigate the impact characteristics of the electrodes. The dynamic response of the material at the high strain-rate is obtained from the split Hopkinson pressure bar test using cylinder type specimens. Experimental results from both quasi-static and dynamic compressive tests with the split Hopkinson pressure bar apparatus are interpolated to construct the Johnson-Cook equation as the constitutive relation that should be applied to simulation of the dynamic behavior of electrodes. To evaluate impact characteristic of a vacuum interrupter, simulation is carried out with five parameters such as initial velocity, added mass of a movable electrode, wipe spring constant, initial offset of a wipe spring and virtual fixed spring constant.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.435-443
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• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

• Journal of Convergence for Information Technology
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• v.8 no.2
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• pp.83-90
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• 2018

We have studied the optimal conditions for design and development on the communication device for a bilateral, and it's electrodes for transmitting electric signal are constructed on the $36^{\circ}$ rotated $LiTaO_3$ substrate by evaporating Al-Cu(W 30%) alloy. At first, we manufactured three kind of samples using this method, and selected two samples as similar with frequency, ripple and passband characteristics, and then we connect two samples by series in order to make bilateral devices. As results, we obtained that the electrode structure has better characteristics then the others, when it's width of reflector and electrode are $1{\lambda}/4$, $1{\lambda}/12$ respectively, and it's frequency is approximately 190.3MHz. Near future, I hope to help the manufacture for communication devices for the multi-channel and the duplex filter.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1501-1503
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• 1999

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiO_2/SiO_2/Si)$ using RF sputtering method. Ag, Cu, Al, Pt films for the formation of top eletrode were doposited on SCT thin films by thermal evaporator and sputtering. The effects of top electodes have be studied on SCT samples with a variety of top electrode materials.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.915-920
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• 2007

AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

• The Korean Journal of Nuclear Medicine
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• v.34 no.4
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• pp.336-343
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• 2000

Purpose: Thallous-201 chloride produced at Korea Cancer Center Hospital(KCCH) is used in detecting cardiovascular disease and cancer. Thallium impurity can cause emesis, catharsis and nausea, so the presence of thallium and other metal impurities should be determined. According to USP and KP, their amounts must be less than 2 ppm in thallium and 5 ppm in total. In this study, the detection method of trace amounts of metal impurities in $[^{201}Tl]$TICI injection with polarography was optimized without environmental contamination. Materials and Methods: For the detection of metal impurities, Osteryoung Square Wave Stripping Voltammetry method was used in Bio-Analytical System (BAS) 50W polarograph. The voltammetry was composed of Dropping Mercury Electrode (DME) as a working electrode, Ag/AgCl as a reference electrode and Pt wire as a counter electrode. Square wave stripping method, which makes use of formation and deformation of amalgam, was adopted to determine the metal impurities, and pH 7 phosphate buffer was used as supporting electrolyte. Results: Tl, Cu and Pb in thallous-201 chloride solution were detected by scanning from 300 mV to -800 mV Calibration curves were made by using $TINO_3,\;CuSO_4\;and\;Pb(NO_3){_2}$ as standard solutions. Tl was confirmed at -450 mV peak potential and Cu at -50 mV Less than 2 ppm of Tl and Cu was detected and Pb was not detected in KCCH-produced thallous-201 chloride injection. Conclusion: Detection limit of thallium and copper is approximately 50 ppb with this method. As a result of this experiment, thallium and other metal impurities in thallous-201 chloride injection, produced at Korea Cancer Center Hospital, are in the regulation of USP and KP Polarograph could be applied for the determination of metal impurities in the quality control of radiopharmaceuticals conveniently without environmental contamination.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.