• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.641-646
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• 2004

We report the changes of the microwave reflection coefficients S$_{11}$ of copper(II)-phthalocyanine (CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand the phase transition of CuPc. For a NSMM system, a high-quality microstrip resonator coupled with a dielectric resonator was used. CuPc thin films were prepared on the pre-heated glass substrates using a thermal evaporation method. The reflection coefficients S$_{11}$ of CuPc thin films were changed by the dependence on the substrate pre-heating temperatures. By comparing reflection coefficient S$_{11}$ and crystal structures, we found the phase transition of CuPc thin films from $\alpha$-phase to $\beta$-phase at the substrate heating temperature 200 $^{\circ}C$./TEX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.927-930
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• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1319-1321
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• 2009

Copper phthalocyanine (CuPc) Field-effect transistors (FETs) was successfully fabricated on plastic substrates. Orientation of CuPc crystallites on substrate could be obtained via rubbing process. It was revealed that CuPc crystallites were perpendicularly aligned on PES substrates with the rubbing direction. The performance of FETs was affected by orientation of CuPc on rubbed substrates.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.139-142
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• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.337-337
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• 2011

The elecronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine(CuPc) layer deposited on top of chloro[subphtalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, at various thicknesses were invertigated using ultraviolet(UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in UV-visible region which were well consistent with fitted spectra by a simple linear combination of single layer absorption spectra of two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For CuPc/SubPc structures, the surface morphology was characterized by elongated grains, characteristic of SubPc thin films, indicating the morphological influence of underlying CuPc layer on subsequent SubPc layer was not large. For SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of CuPc layer varied by the thickness of underlying SubPc layer.

• 대한화학회지
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• 제38권9호
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• pp.632-639
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• 1994

가시부 영역에서 산화아연을 광증감시키기 위해 copper phthalocyanine(CuPc)과 sunfast yellow(SY)를 산화아연 분말에 이층 흡착시켰다. 산화아연에 대한 CuPc의 흡착상태를 알기 위하여 ZnO/CuPc의 광음향, IR 및 라만 스펙트럼을 측정한 결과, CuPc는 $\alpha$형 및 $\beta$형의 결정 특성을 유지한 이합체 또는 분자들의 집합체 상태로 산화아연에 흡착된다는 것을 알았다. 산화아연에 CuPc 및 SY를 순차적으로 이층 흡착시킨계(ZnO/CuPc/SY)는 SY를 먼저 흡착시킨 ZnO/SY/CuPc계보다 광기전력이 높게 나타났고, $ZnO/\beta-CuPc/SY$는 $ZnO/\alpha-CuPc/SY$보다 광기전력이 높게 나타났다. $ZnO/\beta-CuPc/SY$의 전자사진 감도를 측정하였더니 630 nm에서 $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ 이었다.

• 한국표면공학회지
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• 제29권6호
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• pp.851-856
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• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.

• 센서학회지
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• 제6권5호
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• pp.407-413
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• 1997

기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$와 $V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.389-390
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.