• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.6
• /
• pp.365-369
• /
• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

• Applied Microscopy
• /
• v.45 no.1
• /
• pp.9-15
• /
• 2015

In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.6
• /
• pp.376-380
• /
• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

• Korean Journal of Materials Research
• /
• v.12 no.4
• /
• pp.248-253
• /
• 2002

Effect of Sn addition on the fatigue properties of Al-Cu-Mn cast alloy was investigated by low and high cycle fatigue tests. Fatigue life showed the maximum value of 5450cycles in the Al-Cu-Mn alloy containing 0.10%Sn, but decreased rapidly beyond 0.20% of Sn additions. It was found that the fatigue strength was 132MPa and fatigue ratio was 0.31 in the alloy containing 0.10%Sn. Metallographic observation revealed that the fatigue crack initiated at the surface and propagated along the grain boundary. This propagation path was attributed to the presence of PFZ along the grain boundary. The tensile strength increased from 330MPa in 7he Sn-free Al-Cu-Mn cast alloy to 429MPa in the alloy containing 0.10%Sn. But above 0.20%Sn additions, tensile strength was decreased by the segregation of Sn.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.229-229
• /
• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Korean Journal of Materials Research
• /
• v.11 no.4
• /
• pp.300-304
• /
• 2001

Effect of Cd addition on the fatigue properties of Al-Cu-Mn cast alloy was investigated by low and high cycle fatigue tests. With increasing Cd content, fatigue life and tensile strength were increased. It was found that the fatigue strength was 115MPa and the fatigue ratio was 0.31. Metallographic observation revealed that the fatigue crack initiated at the surface and propagated along the grain boundary. This propagation path was attributed to the presence of PFZ along the grain boundary. The tensile strength increased from 330MPa in the Cd-free Al-Cu- Mn cast alloy to 401MPa in the 0.15%Cd-containing alloy.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1193-1196
• /
• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• Journal of Welding and Joining
• /
• v.15 no.4
• /
• pp.136-142
• /
• 1997

In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

• Transactions of Materials Processing
• /
• v.23 no.6
• /
• pp.386-391
• /
• 2014

In the current study, Al-Mn-Zn alloys are strip-cast and used as the base alloy for the core of aluminum clad sheets used in automotive condenser fins. Transition elements such as Cu and Cr are added to the base core alloy in order to improve the properties of the clad sheets. The AA4343/Al-Mn-Zn-X(X: Cu, Cr)/AA4343 clad sheets are fabricated by roll bonding and further cold-rolled to a thickness of 0.08 mm. Clad sheets were intermediately annealed during cold rolling at $450^{\circ}C$ in order to obtain 40% reduction at the final thickness. Tensile strength and sag resistance of the clad sheets are improved by Cu additions to the core alloy, while corrosion resistance is also increased. Cr-additions to the clad sheets enhance sag resistance and provide low enough corrosion, although tensile strength is not improved. The effect of Cu and Cr additions on the properties of the clad sheets is elucidated by microstructural analysis.

• Korean Journal of Materials Research
• /
• v.14 no.8
• /
• pp.595-599
• /
• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.