• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• 한국세라믹학회지
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• 제27권5호
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• pp.677-683
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• 1990

Melt-textured growth of the YBa2Cu3O7-x phase from a supercooled melt created locally aligned, barshaped grains of the orthorhombic 1-2-3 phase. Based on all the observed phenomena, the gross mechanism of the melt-textrued growth of YBa2Cu3O7-x on the (100) plane of MgO was delineated by three basic patterns of reactions. These are : (ⅰ) formation of the aligned 1-2-3 phase and the Y-rich 2-1-1 phase at the bulk region away from the (100) plane of MgO ; (ⅱ) formation of the Cu-richprecipitates at the interfacial region by the selective interface-induced precipitation of the liquid phase ; (ⅲ) condensation reaction of the entrapped Cu-rich vapor with Mg atoms during the initial stage of rapid cooling from 130$0^{\circ}C$ to 98$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제19권2호
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• pp.197-201
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• 1998

The complex formation from Cu(Ⅱ) ion and 1,3-bis(tris(hydroxymethyl)methylamino)propane (bistrispropane) in aqueous solution has been studied potentiometrically and spectrophotometrically. Bistrispropane (btp) coordinates to Cu(Ⅱ) as multidentate. In the btp (L) complex CuL2+, two of the hydroxyl oxygen atoms as well as the amine nitrogens of the ligand are coordinated. In neutral and weakly acidic media, one of the coordinated hydroxyl groups is deprotonated. In basic media, an additional hydroxyl group undergoes deprotonation. The equilibrium constants for the formation of CuL2+, CuLH-1+, and CuLH-2 have been determined. The nature of the coordinate bonds has been deduced from the potentiometric data and the spectra of these complexes.

• 전자공학회논문지D
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• 제35D권12호
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• pp.59-67
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• 1998

본 논문에서는 몬테카를로 방식을 사용하여 이온의 에너지에 대한 타겟 원자의 스퍼터율(Sputter Yield), 이온의 주입 각도에 대한 스퍼터율, 이온의 주입에 따른 타겟 원자의 발산 분포를 3차원으로 시뮬레이션 하였다. 중(중)이온으로 (Ar/sup +/)을 사용하였고, 경(輕)이온으로 (H/sup +/)을 사용하여 10 eV에서 100 KeV 영역의 에너지에 따른 스퍼터율을 계산하였다. 또한, 스퍼터 타겟 물질로서 Cu, Al을 사용하여 계산하였고, 실험치와 일치함을 확인하였다. 스퍼터율은 입사 이온의 에너지가 증가함에 따라 증가하는 경향을 보이지만, 임계점 이후에는 점차적으로 감소하는 경향을 보였다. 중이온에 의한 스퍼터에서는 임계점이 10 KeV 영역이었고, 경이온에 의한 스퍼터에서는 1 KeV 이하 영역이었다. 또한, 이온의 주입 각도에 따라서 타겟의 스퍼터율은 점차적으로 증가하였고, 68° 부근에서 최대 스퍼터율을 기록하였다. 이온의 주입 각도에 따른 타겟 원자의 분포도에서는 각도가 커짐에 따라서 타겟 표면 법선 방향으로 방출되는 원자의 수가 많아짐을 확인하였다. 본 연구에서는, CRAY T3E 슈퍼컴퓨터에서 시뮬레이션을 수행하였으며, 구현된 몬테카를로 스퍼터 시뮬레이터의 GUI(Graphic User Interface) 환경을 구축하였다.

• 한국재료학회지
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• 제6권8호
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• pp.817-824
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• 1996

리모트 수소 플라즈마를 이용하여 Si 기판 위의 구리 오염의 제거 효과에 관하여 조사하였다. 최적의 공정 조건을 찾기 위하여 Si 기판을 1ppm ${CuCI}_{2}$ 표준 화학 용액으로 인위적으로 오염시킨 후 rf power와 세정시간, 거리 (수소플라즈마 중심에서 Si 기판표면까지의 거리)등의 공정 변수를 변화시키며 리모트 수소 플라즈마 세정을 실시하였다. 리모트 수소 플라즈마 세정 후 Si 표면의 분석을 위하여 TXRF(total x-ray reflection fluorescence)와 AFM(atomic force microscope)측정을 실시하였다. 리모트 수소 플라즈마 세정이 Cu의 제거에 효과적이며 Si 표면의 거칠기에 나쁜 영향을 주지 않음을 TXRF와 AFM 분석결과로부터 알 수 있었다. Cu 불순물의 흡착 메커니즘은 산화 환원 전위 이론으로 설명될 수 있으며, Cu 불순물의 제거 메커니즘은 XPS(x-ray photoelectron spectroscopy)분석결과를 근거로 하여 다음과 같이 설명할 수 있다. :먼저 Cu 이온이 Si 표면에 흡착되어 화학적 산화막을 생성한다. 그 다음, 수소 플라즈마 중의 반응성이 강한 수소이온이 이 산화막을 분해시켜 제거하며 Cu 불순물은 산화막이 제거될 때 함께 제거된다.

• 분석과학
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• 제11권5호
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• pp.366-373
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• 1998

여러자리 시프염기인 BSDT(1,9-bis(2-hydroxyphenyl)-2,5,8-triaza-1,8-nonadiene), BSTT(1,12-bis(2-hydroxyphenyl)-2,5,8,11-tetraaza-1,11-dodecadiene)와 BSTP(1,15-bis(2-hydroxyphenyl)2,5,8,11,14-pentaaza-1,14-pentadodecadiene)를 합성하여 전위차적정법으로 산해리 상수값을 구하고, DMSO 용매에서 이들 리간드들과 구리(II), 니켈(II), 및 아연(II)등의 전이금속과의 안정도 상수값을 폴라로그래피를 이용하여 구하였다. 이때 금속과 리간드는 1:1착물을 형성하였고, 안정도 상수값은 금속으로서는 Cu(II)>Ni(II)>Zn(II) 순서로, 리간드로서는 BSTP>BSTT>BSDT 순서로 나타남으로서 주개 원자수의 증가에 의존한다는 사실을 알았다. 엔탈피와 엔트로피는 모두 음의 값을 나타내었는데 흡열반응으로서 금속이온과 리간드가 매우 강하게 결합하고 있음을 알 수 있고 극성을 가지는 금속착물이 생성되어 용매인 DMSO와 아주 강한 상호작용을 함으로써 큰 음의 엔트로피 값을 가진 것으로 생각된다.

• 열처리공학회지
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• 제32권5호
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• pp.212-223
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• 2019

This study is to investigate the relationship between microstructural factors and tensile properties after aging heat treatment of the 15-5PH stainless steel at the temperature range of $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ for various time. For the aging time of 2 hours, hardness showed maximum at $450^{\circ}C$ and then decreased with increasing aging temperature. While, hardness decreased gradually during aging $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ from 1 hour to 5 hours but the hardness nearly unchanged until the 100 hours after 5 hours aging. When aging at $450^{\circ}C$, Cu atoms preferentially aggregated at the prior austenite grain boundaries and martensite lath boundaries, and Cu concentration at those boundaries was nearly unchanged even after aging for 100 hours. Therefore it was suggested that the coherency is still maintained after 100 hours aging at $450^{\circ}C$. Aging at $500^{\circ}C$ and $550^{\circ}C$ results in an increase in the concentration of Ni at the martensite lath boundaries and prior austenite grain boundaries, resulting in the formation of reversed austenite. Especially, when aged at $550^{\circ}C$ for 100 hours, the concentration of Ni remarkably increased at those boundaries, and thus the microstructure of herring bone shape was appeared. Considering the migration of Ni atom to the lath boundaries and prior austenite grain boundaries, Ni atoms contributed greatly to the formation of reversed austenite. On the other hand, it was found that Cu atoms hardly moving to those boundaries may not be contributed to the formation of reversed austenite. When aging at $450^{\circ}C$, the coarsening of the precipitated Cu atoms proceeded very slowly with increasing aging time, therefore the decrease in strengths were small but the reduction area was considerably increased due to the softening of the matrix. At the aging temperature of $500^{\circ}C$ and $550^{\circ}C$, the strengths decreased and the elongation and reduction area increased due to the appearance of the reversed austenite. Especially, the increase of reduction area was remarkable.

• 한국결정성장학회지
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• 제11권4호
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• pp.160-165
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• 2001

The effects of various metals on Field Aided Lateral Crystallization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Under an influence of electric field, metals such s Cu, Ni and Co were found to fasten the lateral crystallization toward a metal-free region, exhibiting a typical FALC behavior while the lateral crystallization of a-Si was not obvious for Pd. However, Au, Al and Cr did not induce the lateral crystallization of a-Si in metal-free region. Such phenomenological differences in various metals were studied in terms of dominant diffusing species (DDS) in the reaction between metal and Si. It was judged that the applied electric field enhanced the crystallization velocity by accelerating the diffusion of metal atoms since the occurrence of lateral crystallization would be strongly dependent on the diffusion of metal atoms than that of Si atoms. Therefore, it was concluded that he only metal-dominant diffusing species in the reaction between metal and Si results in the crystallization of a-Si in metal-free region.

• 한국표면공학회지
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• 제39권6호
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• pp.276-281
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• 2006

In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.203-207
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• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.