• Journal of Powder Materials
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• v.1 no.2
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• pp.145-152
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• 1994

Atomizing mode and powder characteristics of CuA1Ni base shape memory alloy in rotating disk atomization were investigated in accordance with disk materials and additional elements. Produced powders were classified into two types of spherical and flake shape. In the case of CuAlNiBTi and CuAlNiZr alloy, high yield rate and fine powder were obtained. This tendency was same when we used oxide coated disks. We concluded that this results were steno from the wetting characteristics change between molten metal and disk surface. Especially, due to the reactive properties of Ti and Zr with ceramic disk, the change of atomizing appearance and powder characteristics were noticeable.

• Journal of the Korean institute of surface engineering
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• v.4 no.1
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• pp.16-23
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• 1971

In this study , fluoborte solution consisting of lead fluoborate, tin fluoborate and cupric acetate was used. By addition of small amount of Cu+= ion to the solution, the Cu content of deposition layer was almost controlled less than 5%. The amount of Cu in deposition layer was almost constant without any influence of Pb++ & Sn++ in the solution, and the amount of Pb was increased by the increase of total concentration of Pb++ +Sn++ in the solution, and the amount of Pb was increased by the increase of total concentration of Pb++ +Sn++ in the solution . Agitation of plating solution & low current density result in the increase of Cu content. Analyzing of microscopic structures and etching tests of the deposited alloy, it was believed that the alloy had a lamellar structure consisting of copper rich lamellar and lead rich layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.10-10
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• 2001

In this paper, initial depositing process of electroless Ni-Cu-P alloy was investigated by means of SEM, TEM and AES. The results show that the initial deposition is inhomogeneous and there exist different transition layers between different coatings and substrates, which are decided by the structures and compositions of the bath. For Ni-P binary alloy, its deposition takes place superiorly at grain boundary and on some grains with beneficial texture, the thickness of transition layer composed of Ni-Fe-P reaches 2000 angstrom. But during initiation of Ni-Cu-P trinary alloy, only at grain boundary is prIor to be deposited electrolessly, transited layer contains Ni-Fe-Cu-P and is decreased to about 500 angstrom. The structures of the films of Ni-P and Ni-Cu-P are crystalline at the initial depositing stage. The mechanisms of the process are put forward in this paper.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.444-446
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• 1999

The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.478-486
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• 1995

Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.313-316
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• 2008

This work sought to examine the suitability of twin roll strip casting for Ag-27%Cu-25%Zn-3%Sn brazing alloy (BAg-7A) and to investigate the mechanical properties and microstructure of the strip. The effect of aging heat treatment on the properties was also studied,. This new manufacturing process has applications in the production of the brazing alloy. XRD and microstructural analysis of the Ag-27%Cu-25%Zn-3%Sn strip represented eutectic microstructure of a Cu-rich phase and a Ag-rich matrix regardless of heat treatment. The results of mechanical tests showed tensile strength of 470MPa, a significant enhancement, and an 18% elongation of the twin roll casted strip, due mainly to the solid solution strengthening of Zn atoms (${\sim}20%$) in the Cu-rich phases. Tensile results showed gradually decreasing strengths and increasing elongation with aging heat treatment. Microstructural evolution and fractography were also investigated and related to the mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.370-370
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• 2012

Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.137-143
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• 2006

The effects of Cu and Fe additions on the thermal stability, microstructure and mechanical properties of $Al_{85}-Ni_{8.5}-Mm_{6.5},\;Al_{84}-Ni_{8.5}-Mm_{6.5}Cu_1,\;Al_{84}-Ni_{8.5}-M_{m6.5}Fe_1$ alloys, manufactured by gas atomization, degassing and hot-extrusion were investigated. Gas atomization, with a wide super-cooled liquid region, allowed the alloy powders to exhibit varying microstructure depending primarily on the powder size and composition. Al hotextruded alloys consisted of homogeneously-distributed fine-grained fcc-Al matrix and intermetallic compounds. A substitution of 1 at.% Al by Cu increased the thermal stability of the amorphous phase and produced alloy microstructure with smaller fcc-Al grains. On the other hand, the same substitution of 1 at.% Al by Fe decreased the stability of the amorphous phase and produced larger fcc-Al grains. The formation of intermetallic compounds such as $Al_3Ni,\;Al_{11}Ce_3\;and\;Al_{11}La_3$ was suppressed by the addition of Cu or Fe. Among the three alloys examined, the highest Vickers hardness and compressive strength were obtained for $Al_{84}-Ni_{8.5}-M_{m6.5}Cu_1$ alloy, and related to the finest fcc-Al grain size attained from increased thermal stability with Cu addition.