• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1120-1127
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• 2013

In this paper, novel chip-on-chip(CoC) flip-chip bump structures using chip-on-wafer(CoW) process technology are proposed, designed and fabricated, and their microwave frequency responses are analyzed. With conventional bumps of Cu pillar/SnAg and Cu pillar/Ni/SnAg and novel Polybenzoxazole(PBO)-passivated bumps of Cu pillar/SnAg, Cu pillar/Ni/SnAg and SnAg with the deposition option of $2^{nd}$ Polyimide(PI2) layer on the wafer, 10 kinds of CoC samples are designed and their frequency responses up to 20 GHz are investigated. The measurement results show that the bumps on the wafers with PI2 layers are better for the batch flip-chip process and have average insertion loss of 0.14 dB at 18 GHz. The developed bump structures for chips with fine-pitch pads show similar or slightly better insertion loss of 0.11~0.14 dB up to 18 GHz, compared with that of 0.13~0.17 dB of conventional bump structures in this study, and we find that they could be utilized in various microwave packages for high integration density.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.296-298
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• 1997

The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.3025-3029
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• 2014

To realize copper-based electrode materials for printed electronics applications, it is necessary to improve the adhesion strength between conductive lines and the substrate. Here, we report the preparation of Cu pastes using (3-glycidoxypropyl) trimethoxysilane (GPTMS) prepolymer as an adhesion promoter (AP). The Cu pastes were screen-printed on glass and polyimide (PI) substrates and sintered at high temperatures (> $250^{\circ}C$) under a formic acid/$N_2$ environment. According to the adhesion strengths and electrical conductivities of the sintered Cu films, the optimized Cu paste was composed of 1.0 wt % GPTMS prepolymer, 83.6 wt % Cu powder and 15.4 wt % vehicle. After sintering at $400^{\circ}C$ on a glass substrate and $275^{\circ}C$ on a PI substrate, the Cu films showed the sheet resistances of $10.0m{\Omega}/sq$. and $5.2m{\Omega}/sq$., respectively. Furthermore, the sintered Cu films exhibit excellent adhesion properties according to the results of the ASTM-D3359 standard test.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.154-154
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.93-93
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• 1996

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.10-20
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• 2003

This paper is relative to the electroless deposition of nickel or copper films on polyimide and polytetrafluoroethylene substrates. First, it is presented an original approach of the electroless process which consists in grafting nitrogenated functionalities on the polymer surfaces via plasma or VUV-assisted treatments operating in a nitrogen-based atmosphere ($NH_3$, $N_2$), and then in catalysing the grafted surfaces in an aqueous tin-free, Pd(+2)-based solution. Adhesion of the Pd(+2) catalytic species on polymer surfaces is explained by the formation of strong covalent bonds between these species and the grafted nitrogenated groups. Second, it is show how a fragmentation test performed in conjunction with electrical measurements can be used to characterize the practical adhesion of the electroless coatings deposited on flexible polymer substrates, and to evidence the influence of some experimental parameters (plasma treatment time and nature of the gas phase).

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.31-36
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• 2009

In this paper, the laser cutting characteristics of the flexible PCB using high power Nd:YAG UV laser were investigated. A specific FPCB model was selected for the experiment. Test sheets were made, which had equal materials and layer structure to those of the outline (OL) region and the contact pad (CP) region in the FPCB. The experiment is made up of two stages. In the first stage of the experiment, the laser cutting fluence was found, which is the threshold fluence to cut the test sheets completely. The laser cutting fluence of the OL sheet is $1781.26{\sim}1970.16\;J/cm^2$ and that of the CP sheet is $2109.34{\sim}2134.34\;J/cm^2$. In the second stage, cutting performance and its qualities were analyzed by the experiment. The laser cutting performance remained almost unchanged for all laser and process parameter sets. The average cutting width (top side/bottom side) of the OL sheet was $40.45\;{\mu}m/11.52\;{\mu}m$ and that of the CP sheet was $22.14\;{\mu}m/10.93\;{\mu}m$. However, the laser cutting qualities were different according to the parameters. The adjacent region of the cutting line on the OL sheet was carbonized as the beam speed was low and the overlap coefficient was high. The surface quality around the cutting line of the CP sheet was about the same. Carbonization and debris occurred on the surface of the cutting line. As a result of the experiment, the cutting qualities were better as the overlap coefficient was made low and beam speed high. Therefore, the overlap coefficient 2 or 3 is proper for the FPCB laser cutting.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Applied Microscopy
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• v.29 no.3
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• pp.265-274
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• 1999

The microstructure of Cu thin films in various deposition conditions was characterized. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide films by DC magnetron sputtering. The Ar pressure during Cu deposition was controlled to 5, 50 and 100 mtorr. The microstructure was characterized using conventional and high resolution SEM and TEM. As sputtering pressure increases, open boundaries are observed more frequently. The Cu film deposited at 5 mtorr has a dense and uniform structure, while low-density regions or open boundaries between columns exist in the film deposited at higher pressure. As the film grows thicker, open boundaries are wider and the density of open boundaries are higher. The comparison between SEM and TEM show that the small features shown in high resolution SEM are grains. High resolution SEM is very effective to characterize the microstructure of the thin films. One column in the films deposited at 50 and 100 mtorr consists of several grains, which are smaller than those deposited at 5 mtorr.