• 제목/요약/키워드: Crystalstructure

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아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성 (Properties of Cr-N Films Prepared by the Arc-induced Ion Plating)

  • 정재인;문종호;홍재화;강정수;이영백
    • 한국표면공학회지
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    • 제24권1호
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    • pp.24-24
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    • 1991
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성 (Properties of Cr-N Films Prepared by the Arc-induced Ion Plating)

  • 정재인;문종호;홍재화;강정수;이영백
    • 한국표면공학회지
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    • 제25권1호
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    • pp.24-33
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    • 1992
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr₂N turned out to have a fine fibrous structure. The Cr₂N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr₂N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The microstructure of the Cr₂N film was dense and no columnar structure was observed. The films in the mixed state of Cr₂N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/㎟ at 10 gf load.

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Microwave Dielectric Characteristics of Aluminum Magnesium Tantalate Based High Q Ceramics

  • Park, Ji-Won;Lee, Hwack-Joo;Yoon, Seok-Jin;Kim, Hyun-Hai
    • 한국세라믹학회지
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    • 제40권4호
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    • pp.354-359
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    • 2003
  • The microwave dielectric characteristics of (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ (0$\leq$x$\leq$1.0) ceramics were investigated by crystalstructure, variations of ionic polarizability, and microstructures. As x increased, (1-x)(Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)O$_2$-x(Mg$\_$1/3/Ta$\_$2/3/)O$_2$ transformed to tetragonal structure. Because the ionic radius of (Mg$\_$1/3/Ta$\_$2/3/)$\^$4+/was slightly bigger than one of (Al$\_$$\frac{1}{2}$/Ta$\_$$\frac{1}{2}$/)$\^$4+/, the cell parameters increased with increase of (Mg$\_$1/3/Ta$\_$2/3/)O$_2$concentration and coincided with prediction of the molecular additivity rule. As x increased, the compositions revealed ordered phase and were of single phase above 60 mol%. The increase of the ordered phase and grain size enhanced the Q and when ordering was completed at x over 0.6, the grain size was major factor for the increase in the a. Though the grain size increased, however, the porosity deteriorated the q. Therefore, the a depended on the order/disorder, the porosity, and the grain size in regular order.