• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.31.1-31.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.125-125
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• 1995

• Proceedings of the Korean Magnestics Society Conference
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• 1996.05a
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• pp.24-25
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• 1996

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.24.1-24.1
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• 2008

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.48-48
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• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.61-65
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• 2005

Despite a short history, the research on porous coordination polymers is gaining importance in inorganic chemistry thanks to facile synthesis, unambiguous characterization by X-ray diffraction and potentials as high-surface-area materials. Recently, gas sorption properties of various porous materials are under active investigations in order to know whether it is possible to store industrially important gases through physisorption, and porous coordination polymers are one of the most promising candidates for such a purpose. This article reviews two recent papers reporting a series of isomorphous frameworks based on Zn(II), dicarboxylate and diamine ligands and their gas sorption properties.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.523-532
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• 2009

In this study, four API X80 linepipe steel specimens were fabricated with varying cooling rates and finish cooling temperatures, and their microstructures and crystallographic orientations were analyzed to investigate the effects of cooling conditions on their tensile and Charpy impact properties. All the specimens consisted of acicular ferrite, granular bainite, and secondary phases such as martensite and martensiteaustenite constituent. The volume fraction of secondary phases increased with increasing cooling rate, and the higher finish cooling temperature resulted in the reduction in volume fraction and grain size of secondary phases. According to the crystallographic orientation analysis data, the effective grain size and unit crack path decreased as fine acicular ferrites having a large amount of high-angle grain boundaries were homogeneously formed, thereby leading to the improvement of Charpy impact properties. The specimen fabricated with the higher cooling rate and lower finish cooling temperature had the highest upper shelf energy and the lowest energy transition temperature because it contained a large amount of fine secondary phases homogeneously distributed inside fine acicular ferrites, while its tensile properties well maintained.

• 한국전자현미경학회:학술대회논문집
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• 2003.05a
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• pp.78-79
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.160-160
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• 2017