• Title/Summary/Keyword: Crystallized glass

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The Synthesis of $BaTiO_3$ Powder by Sol-Gel Process (졸-겔법에 의한 티탄산 바륨 분말 합성)

  • Doh Kil-myung;Kim IIl-chool;Park Dae-wook
    • Journal of the Korean Chemical Society
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    • v.37 no.1
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    • pp.92-97
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    • 1993
  • Sol-Gel Process is a new method of synthesis of high-quality of glass and glass-ceramics. Ferroeletric material, $BaTiO_3$ powder was made by reacting $Ba(OH)_2$ and $Ti[OCH(CH_3)_2]_4$ in alcohol. There was about 16.5% weight loss in thermogravimetric analysis. It was crystallized to tetragonal structure by heat treatment at $700^{\circ}C$ for 2 hours and had a specific surface area, 16.0 $m^2/g.$ Shrinkage curve by sintering was began around $1100^{\circ}C$ in dilatometer analysis.

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Luminescent Properties of BaSi2O5:Eu2+ Phosphor Film Fabricated by Spin-Coating of Ba-Eu Precursor on SiO2 Glass

  • Park, Je Hong;Kim, Jong Su;Kim, Jong Tae
    • Journal of the Optical Society of Korea
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    • v.18 no.1
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    • pp.45-49
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    • 2014
  • Well-crystallized $BaSi_2O_5:Eu^{2+}$ phosphor films were synthesized by heat treatment of spin-coated BaO:Eu on $SiO_2$ glass. We investigated luminescence-structure properties of these phosphor films as a function of heat-treatment temperature. From x-ray diffraction patterns, our $BaSi_2O_5:Eu^{2+}$ phosphor films revealed that (111)- and (204)-crystal planes of $BaSi_2O_5$ crystal were dominantly increased with an increase of heat-treatment temperature. Photoluminescence intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films were increased with amount of these crystal planes. It can be explained that $Eu^{2+}$ ions were stably occupied at specific crystal orientation of $BaSi_2O_5$ crystal, enhancing the luminescent intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films. In addition, our $BaSi_2O_5:Eu^{2+}$ phosphor films had transmittance of 70% at 510 nm,.due to the dense morphology and specific crystallinity of $BaSi_2O_5:Eu^{2+}$ phosphor films.

Characterization of Al-doped ZnO (AZO) Transparent Conductive Thin films Grown by Atomic Layer Deposition (원자층 증착법으로 제조된 Al-doped ZnO 투명전도막의 특성평가)

  • Jung, Hyun-June;Shin, Woong-Chul;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.2
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    • pp.137-141
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    • 2009
  • AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.

Fabrication of Photocatalyst Glass Beads Coated with TiO2 Thin Film by a Layer-by-Layer Process (LBL법에 의해 TiO2막이 코팅된 광촉매 글라스 비드 제조)

  • Lee, Ji-Sun;Chae, Yoo-Jin;Lee, Mi-Jai;Kim, Sei-Ki;Hwang, Jong-Hee;Lim, Tae-Young;Hyun, Soong-Keun;Kim, Jin-Ho
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.379-383
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    • 2012
  • $TiO_2$ thin films consisting of positively charged poly(diallyldimethylammonium chloride)(PDDA) and negatively charged titanium(IV) bis(ammonium lactato) dihydroxide(TALH) were successfully fabricated on glass beads by a layer-by-layer(LBL) self-assembly method. The glass beads used here showed a positive charge in an acid range and negative charge in an alkaline range. The glass beads coated with the coating sequence of(PDDA/TALH)n showed a change in the surface morphology as a function of the number of bilayers. When the number of bilayers(n) of the(PDDA/TALH) thin film was 20, Ti element was observed on the surface of the coated glass beads. The thin films coated onto the glass beads had a main peak of the (101) crystal face and were highly crystallized with XRD diffraction peaks of anatase-type $TiO_2$ according to an XRD analysis. In addition, the $TiO_2$ thin films showed photocatalytic properties such that they could decompose a methyl orange solution under illumination with UV light. As the number of bilayers of the(PDDA/TALH) thin film increased, the photocatalytic property of the $TiO_2$-coated glass beads increased with the increase in the thin film thickness. The surface morphologies and optical properties of glass beads coated with $TiO_2$ thin films with different coating numbers were measured by field emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD) and by UV-Vis spectrophotometry(UV-vis).

Characteristic of Electrical Conductivity in the $\textrm{CuO}-\textrm{Bi}_{2}\textrm{O}_3-\textrm{V}_2\textrm{O}_5$ Glass System with Various Compositions ($\textrm{CuO}-\textrm{Bi}_{2}\textrm{O}_3-\textrm{V}_2\textrm{O}_5$계 글라스에서 조성 변화에 따른 전기 전도도의 특성)

  • Park, S.S.;Jeong, D.J.;Lee, H.;Park, C.Y.;Min, S.K.;Park, H.C.
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1110-1114
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    • 1998
  • The crystallization behaviors and electrical conductivities of the glasses heat-treated at various times and temperatures in the CuO-Bi$_2$O$_3$-V$_2$O$_{5}$ glass system were investigated. Among glass samples with various compositions, the highest conductivity obtained in the 31CuO-14Bi$_2$O$_3$-55V$_2$O$_{5}$ (mol%) glass sample. The 31CuO-14Bi$_2$O$_3$-55V$_2$O$_{5}$ (mol%) glass sample crystallized by heat treatment at 358$^{\circ}C$ for 8h had 2.67$\times$10$^{-2}$ $\Omega$$^{-1}$ $cm^{-1}$ /, which was much high value as a solid electrolyte. Compared to the glass sample, the heat- treated glass sample was increased in conductivity by an order of 10$^3$-10$^4$due to the formation and growth of BiVO$_4$ and CuVO$_3$crystals.

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Sensing properties of ZnO thin films fabricated by RF sputtering method for toxic gas (RF sputtering 방법을 이용하여 제작한 ZnO 박막의 유독성 가스에 대한 반응 특성 연구)

  • Hwang, Hyun-Suk;Kang, Hyun-Il;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.247-247
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    • 2009
  • In this work, Ga-doped ZnO (GZO) thin films for toxic gas sensor application were deposited on low temperature co-fired ceramic (LTCC) substrates, by RF magnetron sputtering method. LTCC is one of promising materials for integration with heater, low cost production and high manufacturing yields than silicon substrate. The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 greentapes which consist of alumina and glass particle in an organic binder. The GZO thin films deposited on the substrates and were analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The fabricated sensors showed good sensitivity and fast response time to common types of toxic gases (NOx, COx).

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Study on the Development of High Strength Admixture using Paper Sludge Ash (제지 애쉬를 사용한 고강도 혼화재 개발에 관한 연구)

  • 이재환;서형남;김창률;민경소
    • Proceedings of the Korea Concrete Institute Conference
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    • 1998.10c
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    • pp.87-92
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    • 1998
  • The purpose of this study is to use paper sludge ash as a material in manufacturing high strength admixture. The reactivity of paper sludge ash as iteself is low for the crystallized non-reactive $SiO_2$, but when the $SiO_2$ was removed, the phase component is mainly composed of glass phase which could react with cement hydrates. In this study, we manufactured high strength admixture using separated paper sludge ash, and examined the strength of mortar, spun concrete with and without this high strength admixture in steam curing. The strength of spun concrete with high strength admixture including paper sludge ash was more higher than that of spun concrete without admixture. As a result, it was found that paper sludge ash could be used to a pozzolanic material in manufacturing high strength admixture.

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Influence of Substrate Temperature of KLN Thin Film Deposited on Amorphoous Substrate (비정질 기판위에 증착한 KLN 박막의 기판온도에 의한 영향)

  • 박성근;최병진;홍영호;전병억;김진수;백민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.34-42
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    • 2001
  • The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

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Micromachined MoO3 Gas Sensor with Low Power Consumption of 0.5 Watt

  • Jang, Gun-Eik;Wu Q.H.;Liu C.C.
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.173-176
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    • 2005
  • A new $MoO_3$ based microsensor with low power consumption was presented. Typical size of sensor was 5mm in width and 8mm in length. As a sensitive electrode, $MoO_3$ was successfully fabricated by IC technology on pyrex glass of $250{\mu}m$ in thickness. After annealing at $550^{\circ}C$ for 3hrs, the film was fully crystallized and demonstrated as pure $MoO_3$ structure. The grain size of $MoO_3$ was plat like and typical size was about $1{\mu}m$. Based on the results of sensitivity measurement, $MoO_3$ microsensor shows especially high selectivity to $H_2$ reducing gas atmosphere. The applied heater power was lower than 0.5 Watt.

Electrical and Optical Characteristics of PLZT Thin Films in AFE region (AFE 영역 PLZT 박막의 전기 및 광학 특성)

  • 류완균;최형욱;장낙원;강종윤;백동수;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.1.1-4
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    • 1995
  • In this study, PLZT thin films in AFE region prepared by sol-gel processing were investigated. And PLZT stock solutions were spin-coated on ITO-glass. The PLZT thin films were annealed by RTA. Hysteresis curves, dielectric characteristics and optical transmittances were measured in order to investigates the characteristics far the thin films. The PLZT thin films were crystallized at 750$^{\circ}C$ for 5 mimutes by RTA and the rosette structure composed of perovskite observed in the thin films. In case La content was 2/90/10 antiferroelectric-ferroelectric phase boundary was 2/90/10 PLZT thin film, and its hysteresis curve was good for application of optical information storage.