• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• 자원환경지질
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• 제49권5호
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• pp.389-410
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• 2016

옥천대 남서부인 전주-김제-정읍일대 쥬라기 화강암질 저반체로부터 구한 FT 연대는 넓은 범위에 걸쳐 나타난다: 스핀=158~70 Ma; 저콘=127~71 Ma; 인회석=72~46 Ma. 교란되지 않은 일차냉각 및 리셋 또는 부분감소된 FT 연대, 그리고 일부 트랙 길이 측정자료에 기반한 열연대학적 해석을 통해 화강암체가 겪은 복잡한 지열사를 규명하였다. 이 화강암체의 전체 냉각사는 정출 후 $300^{\circ}C$ 등온선까지의 비교적 빠른 전기 냉각(${\sim}20^{\circ}C/Ma$)과 $300^{\circ}C-200^{\circ}C-100^{\circ}C$ 등온선을 거쳐 현재 지표온도에 이르기까지의 매우 느린 후기 냉각($2.0{\sim}1.5^{\circ}C/Ma$)으로 특징지어진다. 이 쥬라기 화강암체의 많은 부분은 일련의 후기 백악기 화성활동에 의해 적어도 $170^{\circ}C$ 이상(최고 >$330^{\circ}C$)의 다양한 수준에 달하는 지열상승을 겪은 것으로 확인되었다. 다양한 후기 화성암체들의 두 지점으로부터 중복측정된 FT 저콘 연대의 일치된 결과는 그들의 생성시기를 잘 정의한다: 석영반암=$73{\pm}3Ma$; 섬록암=$73{\pm}2Ma$; 유문암=$72{\pm}3Ma$; 장석반암=$78{\pm}4Ma$ (전체 가중평균=$73{\pm}3Ma$). 이들 후기 화성암체와 페그마타이트 암맥군의 관입은 온천개발지역(화심, 죽림, 목욕리, 회봉 등)을 위시한 연구지역 내에서의 후기 지열상승에 주요 역할을 하였던 것으로 해석된다. 이 화강암 저반체의 후기냉각이 지표면의 침식-삭박에 따른 상대적 융기에 의해 근본적으로 규제되었다고 가정하면, 전기 백악기 이후의 융기는 연간 평균 약 0.05 mm (즉 백만 년에 약 50 m)의 매우 느린 속도로 진행되었다. 100 Ma, 70 Ma, 40 Ma를 기준으로 현재까지의 총융기량은 각각 5 km, 3.5 km, 2 km 정도로 추정된다. 여러 지점의 일정한 융기량은 암체 전체가 광역적으로 고르게 융기하였음을 지시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국식품영양학회지
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• 제19권3호
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• pp.279-287
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• 2006

본 연구는 변형 전분이 가래떡의 노화에 어떤 영향을 미치는지를 규명하기 위해 실시하였다. 우선 변형전분이 가래떡의 노화에 미치는 영향을 Avrami equation으로 검토하였는데 그 결과 Avrami equation 지수 n값은 실험구 모두 1.03${\sim}$l.31범위로 나타났다. 이것은 변형 전분을 첨가한 가래떡 전분 입자의 결정화 즉시노화가 일어난다는 것을 의미하며 대조구(control)의Avrami equation 지수 n값이 가장 높은 값을 나타내었다. 노화속도상수 k는 대조구에 비해서 변형 전분을 첨가한 경우가 낮게 나타났으며 그 중 SHPP가 가장 낮게 나타났다. 이러한 경향은 노화 속도의 시간 상수 1/k값에서도 잘 나타나 있다. 시차주사열량기(DSC, differential scanning calorimeter)를 이용한 변형 전분의 가래떡에 대한 열적 특성 검토에서는 저장 기간에 따라 변형 전분을 사용한 경우 전분 입자의 호화 개시 온도가 조금씩 높아졌고 그 중 SHPP가 가장 완만하게 상승하였다. 떡의 최대 호화온도에서도 저장기간에 따라 SHPP는 거의 변하지 않고 SSOS, ASA는 약간 증가하였고 대조구는 더 많이 증가한 것으로 나타났다. 용융 enthalpy(${\Delta}$H)는 대조구(21.2${\rightarrow}$26.1${\rightarrow}$27.1)에 비해서 변형 전분을 첨가한 경우(SSOS: 21.1${\rightarrow}$23.7${\rightarrow}$24.1, ASA: 21.1${\rightarrow}$24.8${\rightarrow}$25.4)가 용융 enthalpy가 적은 것으로 나타났으며 특히 SHPP의 경우는 가장 적은 폭으로 증가하였다. 가래떡의 열 용융 신전성(열용융신전성(熱熔融伸剪性), Martindiameter)은 대조구, ASA, SSOS, SHPP 순으로 좋게 나타났으며 SHPP를 첨가한 것이 가장 좋은 용융 신전성을 나타내었다. 변형 전분을 첨가한 가래떡의 색깔과 관능적 조직감의 경우에는 L$^*$값은 저장 기간에 따라 SSOS와 SHPP의 경우에는 그 값이 많이 변하지 않고 안정한 편이었다. a$^*$값은 대조구(2.21${\rightarrow}$5.34 : 141.6%), ASA(2.01${\rightarrow}$4.22 : 110.0%), SSOS(2.78${\rightarrow}$4.87 : 75.2%), SHPP(2.12${\rightarrow}$3.40) : 60.4%)의 순이었다. 또 b$^*$값은 대조구(4.32${\rightarrow}$6.35 : 47.0%), ASA(4.66${\rightarrow}$5.73 : 23.0%), SSOS (4.90${\rightarrow}$5.89 : 20.2%), SHPP(4.89${\rightarrow}$5.12 : 4.7%) 순서로 SHPP가 가장 색깔 변화가 없었다. 관능적 조직감은 변형 전분을 사용한 경우 높게 나타나고 특히 SHPP는 가장 좋은 관능적 조직감을 유지하는 것으로 나타났다.