• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Economic and Environmental Geology
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• v.49 no.5
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• pp.389-410
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• 2016

Wide ranges of fission-track (FT) ages were obtained from the Jurassic granite batholith in Jeonju-Gimje-Jeongeup area, southwestern Okcheon Belt: sphene=158~70 Ma; zircon=127~71 Ma; apatite=72~46 Ma. Thermochronological analyses based on undisturbed primary cooling and reset or partially-reduced FT ages, and some track-length data reveal complicated thermal histories of the granite. The overall cooling of the batholith is characterized by a relatively rapid earlier-cooling (${\sim}20^{\circ}/Ma$) to $300^{\circ}C$ isotherm since its crystallization and a very slow later-cooling ($2.0{\sim}1.5^{\circ}/Ma$) through the $300^{\circ}C-200^{\circ}C-100^{\circ}C$ isotherms to the present surface temperature. It is indicated that the large part of Jurassic granitic body experienced different level of elevated temperatures at least above $170^{\circ}C$ (maximum>$330^{\circ}C$) by a series of igneous activities in late Cretaceous. Consistent FT zircon ages from duplicate measurements for two sites of later igneous bodies define their formation ages: e.g., quartz porphyry=$73{\pm}3Ma$; diorite=$73{\pm}2Ma$; rhyolite=$72{\pm}3Ma$; feldspar porphyry=$78{\pm}4Ma$ (total weighted average=$73{\pm}3Ma$). Intrusions of these later igneous bodies and pegmatitic dyke swarms might play important roles in later thermal rise over the study area including hot-spring districts (e.g., Hwasim, Jukrim, Mogyokri, Hoebong etc.). On the basis of an assumption that the latercooling of granite batholith was essentially controlled by the denudation of overlying crust, the uplift since early Cretaceous was very slow with a mean rate of ~0.05 mm/year (i.e., ~50 m/Ma). Estimates of total uplifts since 100 Ma, 70 Ma and 40 Ma to present-day are ~5 km, ~3.5 km and ~2 km, respectively. The consistent values of total uplifts from different locations may suggest a regional plateau uplift with a uniform rate over the whole granitic body.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• The Korean Journal of Food And Nutrition
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• v.19 no.3
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• pp.279-287
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• 2006

This study was carried out to investigate the influences of modified starches on suppression of retrogradation in Korean rice cake for their optimization, Garaeduk. Based upon studying Avrami equation, the Avrami exponent n value of all the experiment samples was found to be 1.03 ${\sim}$ 1.37 in the influence of modified starches on retrogradation of the rice cake. This means that the retrogradation of the Korean rice cake occurred instantly after the crystallization of starch particles in the Korean rice cake formulated by modified starches. The highest Avrami exponent n value was indicated in the control sample. The rate constant k of retrogradation in the Korean rice cake formulated by modified starches showed comparatively low and appeared to be the lowest in the Korean rice cake formulated by SHPP. This tendency was shown well in the time constant(1/k) of retrogradation velocity. According to the DSC analysis, the onset temperature of gelatinization in thermal characteristics showed somewhat high in case of addition of modified starch into the Korean rice cake on storage time and the SHPP was slowly gone up. In peak temperature of gelatinization in thermal characteristics of the DSC analysis, SSOS and ASA were increased a little in comparison with the control. The control was comparatively high increase. Melting enthalphy of all samples added with modified starches (SSOS: 21.1${\rightarrow}$23.7${\rightarrow}$24.1, ASA: 21.1${\rightarrow}$24.8${\rightarrow}$25.4) appeared to be lower than that of the Korean rice cake without modified starches(21.2${\rightarrow}$26.1${\rightarrow}$27.1). The Korean rice cake added with SHPP was shown to be the lowest in the increasing rate of melting enthalpy(20.9${\rightarrow}$21.4${\rightarrow}$22.1). Heat spreadability of all the samples in Martin melting diameter was revealed to be good in order of control, ASA, SSOS, SHPP and especially the Korean rice cake added with SHPP was shown to be the best in heat spreadability. In color, sensory examination and textural characteristic of the Korean rice cake added with modified starches, the L$^*$value was not changed practically with the storage time and seemed to be stable. The a$^*$ value of the samples was followed by control(2.21${\rightarrow}$5.34: 141.6%), ASA (2.01${\rightarrow}$4.22: 110.0%), SSOS (2.78${\rightarrow}$4.87: 75.2%) and SHPP (2.12${\rightarrow}$3.40: 60.4%) in order of color change. Also the b$^*$ value of the samples was followed by control(4.32${\rightarrow}$6.35: 47.0%), ASA (4.66${\rightarrow}$5.73: 23.0%), SSOS (4.90${\rightarrow}$5.89: 20.2%) and SHPP (4.89${\rightarrow}$5.12: 4.7%) and there was the least (or no) color change with the SHPP. Textural characteristics of samples was shown to be the highest in case of modified starch addition and especially SHPP appeared to be the best in texture.