• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.1-10
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• 1986

The crystallization behaviour and the machinability of mica glass-ceramics with the content of F1 were studied. The material was made from the $K_2O-MgO-Al_2O_3-B_2O_3-SiO_2-F$ glasses by the heattreatment at 80$0^{\circ}C$-110$0^{\circ}C$ where the content of F-1 was changed in the range from 1, 3wt% to 6.1wt%. X-ray diffraction phase analysis and optical observation were adopted to study the crystallization behaviour. The machinability was measured by a manual sawing test and MOR. The crystal phases of these glass-ceramics identified by XRD were chondrodite fluoborite and norbergite at low temperature but fluorophlogopite at high temperature. The crystallization of glasses containing 1.3wt% -2.5wt% F-1 were predominately controlled by surface crystallization while the crystallization of glasses containing 3.8 wt% -6.1wt% F-1 were controlled by volume crystallization. Among the test the best machinability and strength value were obtained from those specimens contained fluoride 4.2wt% -4.4wt% and when the heattreatment was performed at 95$0^{\circ}C$-110$0^{\circ}C$ for 2 hours.

• Carbon letters
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• v.7 no.2
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• pp.87-96
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• 2006

This paper describes the physical properties of filled Nylon6 composites resin with nano-sized carbon black particle and graphite nanofibers prepared by melt extrusion method. In improving adhesions between resin and fillers, the surface of the carbon filler materials were chemically modified by thermo-oxidative treatments and followed by treatments of silane coupling agent. Crystallization temperature and rate of crystallization increased with increases in filler concentration which would act as nuclei for crystallization. The silane treatments on the filler materials showed effect of reduction in crystallization temperature, possibly from enhancement in wetting property of the surface of the filler materials. Percolation transition phenomenon at which the volume resistivity was sharply decreased was observed above 9 wt% of carbon black and above 6 wt% of graphite nanofiber. The graphite nanofibers contributed to more effectively in an increase in electrical conductivity than carbon black did, on the other hand, the silane coupling agent negatively affected to the electrical conductivity due to the insulating property of the silane. Positive temperature coefficient (PTC) phenomenon, was observed as usual in other composites, that is, temperature increase results conductivity increase. The dispersity of the fillers were excellently approached by melt extrusion of co-rotational twin screw type and it could be illustrated by X-ray diffraction and SEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Applied Chemistry for Engineering
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• v.4 no.1
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• pp.94-102
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• 1993

The effects of temperature and of $Na_2O$ and $SiO_2$ contents on the crystallization of zeolite A were studied, by examining crystallization curves and particle size distributions of final products at various crystallization conditions. Crystallization process could be simulated adopting the assumptions of constant linear growth rate and equilibrium between amorphous solid phase and soluble species. Rate constants were determined by comparing the simulated crystallization curves with experimental data. Rate constant for linear growth increased with temperature and crystallization rate at different mole ratio of $Na_2O/H_2O$ correlated reasonably well with increase of soluble species. The rate constant of crystallization did not increase with increase in mole ratio of $Na_2O/H_2O$, but the rate of nuclei formation and the fraction of soluble species were enhanced. The rate constants for linear growth of zeolite A were determined as $0.07{\sim}0.24{\mu}m{\cdot}min^{-1}$ at these experimental conditions Apparent activation energy was estimated as $49kJ{\cdot}mol^{-1}$.

• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.5-14
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• 1999

Glass ceramics for dental crown prosthesis were prepared by crystallization of CaO-MgO-SiO2-$P_2O_5-TiO_2$ glasses. Their crystallization behaviors have been investigated as a function of heattreatment temperature, holding time and chemical composition in relation to mechinical properties. Crystallization peak temperatures were determined by differential thermal analysis(DTA). Crystalline phases and mircostructures of heat-treated sample were determined by the means of powder X-ray diffraction(XRD) and scanning electron microscopy(SEM). The final crystalline phase assemblages and the microstructures of the samples were found to be dependent on glass compositions, heattreatment temperature, and holding time. 1st crystallization peak temperature(TP), affected strongly by apatite, was found to be increased or decreased. From the experiment, the following results were obtained : 1. The crystallization peak temperature($T_P$) formed by apatite increased until adding up to 9wt% $TiO_2$ to base glass composition, then decreased above that. 2. Apatite($Ca_{10}P_6O_{25}$), whitlockite(${\beta}-3CaO-P_2O_5$), $\beta$-wollastonite($CaSiO_3$), magnesium tianate($MaTiO_3$) and diopside(CaO-MgO-$2SiO_2$) crystal phase were precipitated in MgO-CaO-$SiO_2-TiO_2-P_2O_5$ glass system containing 9wt% and 11wt% of $TiO_2$ 3. Vickers hardness of samples increased with increasing heat-treatment temperature and Vickers hardness of S415T9 samples heat-treated at 1075 was approxi-mately 813Kg $mm^{-2}$ as maximum value. 4. Vickers hardness of samples increased due to precipitation of apatite, whitlockite, $\beta$-wollastonite, magnesium titanate, and diopside crystal phases within glass matrix.

• Journal of Mechanical Science and Technology
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• v.18 no.11
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• pp.2042-2048
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• 2004

A molecular dynamics study has been conducted on an external-force-field-induced isothermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a dc bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.548-551
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• 2002

The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.459-462
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• 2000

A new method for the fabrication of poly-Si films is reported using by alternating magnetic flux crystallization (AMFC) of LPCVD a-Si films. In this work we have studied the crystallization of LPCVD a-Si films by alternating magnetic flux. A-Si films were 1200$\AA$-thick deposited at 48$0^{\circ}C$ at a total pressure of 0.25Torr using Si$_2$H$_{6}$/H$_2$. After this step, these a-Si films were thermally annealed by Alternating Magnetic Flux at 43$0^{\circ}C$ for 1hours. The annealed films were characterized using X-ray diffraction (XRD), Raman Spectra, Atomic Force Microscopy(AFM). Both alternating magnetic flux crystallization and solid phase crystallization were investigated to compare enhanced crystallization a-Si. We have found that the low temperature crystallization method at 43$0^{\circ}C$ by alternating magnetic flux.x.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.