• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.854-860
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• 1997

The tribological property of ceramics is very important for use in seal rings, pump parts, thread guides and mechanical seal, etc. In the present study, which RBSC/graphite composites were manufactured by adding graphite powders with different particle sizes to mixtures of SiC powder, metallic silicon, carbon black and alumina, effects on the tribological property of each RBSC/graphite composite was investigated in accordance with the particle size of the added graphite powder. The water absorption, the bending strength and the resistance for the friction and wear were measured, and the crystalline phase and the microstructure were respectively examined by using XRD and SEM. In case that the particle size of the graphite powder was fine(2${\mu}{\textrm}{m}$), the formation of $\beta$-SiC was accelerated, thereby making the increase of the bending strength and the decrease of the water absorption, but no improvement for the tribological properties. Furthermore, in case that the particle size of the graphite powder was some large(88~149${\mu}{\textrm}{m}$), the formation of $\beta$-SiC was not accelerated, to thereby make the decrease of the bending strength and the increase of the water absorption, but the improvement for the tribological property of only the composite having the graphite powder of 20 vol%. In addition, in case that the particle size distribution of the graphite powder was large (under 53 ${\mu}{\textrm}{m}$), there was no improvement for every properties. However, the composites, which the graphite powder with the particle size of 53~88 ${\mu}{\textrm}{m}$ was added in 10~15 vol%, had the most increased resistance for the friction and wear which show the worn out amount of 0.4~0.6$\times$10-3 $\textrm{cm}^2$, and the value of the bending strength is 380~520 kg/$\textrm{cm}^2$.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.434-442
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• 2014

Serious environmental problems have been caused by the greenhouse effect due to carbon dioxide($CO_2$) or nitrogen oxides($NO_x$) generated by the use of fossil fuels, including oil and liquefied natural gas. Many countries, including our own, the United States, those of the European Union and other developed countries around the world; have shown growing interest in clean energy, and have been concentrating on the development of new energy-saving materials and devices. Typical non-fossil-fuel sources include solar cells, wind power, tidal power, nuclear power, and fuel cells. In particular, organic solar cells(OSCs) have relatively low power-conversion efficiency(PCE) in comparison with inorganic(silicon) based solar cells, compound semiconductor solar cells and the CIGS [$Cu(In_{1-x}Ga_x)Se_2$] thin film solar cells. Recently, organic cell efficiencies greater than 10 % have been obtained by means of the development of new organic semiconducting materials, which feature improvements in crystalline properties, as well as in the quantum-dot nano-structure of the active layers. In this paper, a brief overview of solar cells in general is presented. In particular, the current development status of the next-generation OSCs including their operation principle, device-manufacturing processes, and improvements in the PCE are described.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.45-55
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• 2018

Environmentally benign lead-free solder coated ribbon (e. g. SnCu, SnZn, SnBi${\cdots}$) has been intensively studied to interconnect cells without lead mixed ribbon (e. g. SnPb) in the crystalline silicon(c-Si) photovoltaic modules. However, high melting point (> $200^{\circ}C$) of non-lead based solder provokes increased thermo-mechanical stress during its soldering process, which causes early degradation of PV module with it. Hence, we proposed low-temperature conductive paste (CP) based tabbing method for lead-free ribbon. Modules, interconnected by the lead-free solder (SnCu) employing CP approach, exhibits similar output without increased resistivity losses at initial condition, in comparison with traditional high temperature soldering method. Moreover, 400 cycles (2,000 hour) of thermal cycle test reveals that the module integrated by CP approach withstands thermo-mechanical stress. Furthermore, this approach guarantees strong mechanical adhesion (peel strength of ~ 2 N) between cell and lead-free ribbons. Therefore, the CP based tabbing process for lead free ribbons enables to interconnect cells in c-Si PV module, without deteriorating its performance.

• Journal of the Korean Solar Energy Society
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• v.40 no.5
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• pp.35-45
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• 2020

Photovoltaic (PV) power system prices have been steadily dropping in recent years due to their mass production and advances in relevant technology. Crystalline silicon (c-Si wafers) account for the largest share of the price of solar cells; reducing the thickness of these wafers is an essential part of increasing the price competitiveness of PV power systems. However, reducing the thickness of c-Si wafers is challenging; typically, phenomena such as bowing and cracking are encountered. While several approaches to address the bowing phenomenon of the c-Si solar cells exist, the only method to study the crack phenomenon (related to the strength of the c-Si solar cells) is the bending test method. Moreover, studies on determining the strength properties of the solar cells have focused largely on c-Si wafers, while those on the strength properties of front and rear-side electrodes and SiNx, the other components of c-Si solar cells, are scarce. In this study, we analyzed the strength characteristics of each layer of c-Si solar cells. The strength characteristics of the sawing mark direction produced during the production of c-Si wafers were also tested. Experiments were conducted using a 4bending tester for a specially manufactured c-Si solar cell. The results indicate that the back side electrode is the main component that experienced bowing, while the front electrode was the primary component regulating the strength of the c-Si solar cell.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.1
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• pp.76-82
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• 2013

The solar cell is a device to convert light energy into electric, which supplies power to the external load when exposed to the incident light. The photocurrent and voltage occurred in the device are significant factors to decide the output power of solar cells. The crystalline silicon solar cell module has photocurrent loss due to light reflections on the glass and EVA(Ethylene Vinyl Acetate). These photocurrent loss would be a hinderance for high-efficiency solar cell module. In this paper, the quantitative analysis for the photocurrent losses in the 300-1200 wavelength region was performed. The simulation method with MATLAB was used to analyze the reflection on a front glass and EVA layer. To investigate the intensity of light that reached solar cells in PV(Photovoltaic) module, the reflectance and transmittance of PV modules was calculated using the Fresnel equations. The simulated photocurrent in each wavelength was compared with the output of real solar cells and the manufactured PV module to evaluate the reliability of simulation. As a result of the simulation, We proved that the optical loss largely occurred in wavelengths between 300 and 400 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• Resources Recycling
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• v.26 no.1
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• pp.16-21
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• 2017

This paper relates to the synthesis of a source powder for SiC crystal growth. ${\beta}-SiC$ powders are synthesized at high temperatures (>$1400^{\circ}C$) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form poly-crystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.

• 대한공업교육학회지
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• v.33 no.1
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• pp.249-264
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• 2008

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.