• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.95-96
• /
• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

• 한국결정학회지
• /
• 제14권2호
• /
• pp.93-104
• /
• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• The Korean Journal of Ceramics
• /
• 제6권1호
• /
• pp.53-57
• /
• 2000

It was observed that the growth rates are different each other in the opposite direction along c-axis due to the crystal polarity. In according to the calculation based on diffusional equations with consideration of the electrical polarization and the surface charge, the difference of growth rates could be explained. Some experiments were compared with this kinetic explanation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1812-1814
• /
• 1999

The effects of polarity of the polymer on transcription-aligned twisted nematic (TN)-liquid crystal display (LCD) on various the polyimide (PI) surfaces were investigated. The monodomain alignment of nematic (N)LC is obtained in cells fabricated by transcription alignment method on PI surface with medium polarity. The LC alignment using transcription alignment method is attributed to polarity of the polymer. The threshold voltage of transcription-aligned TN-LCD decreases with increasing the polarity of the polymer on three kinds of the PI surfaces. The threshold voltage of transcription-aligned TN-LCD on PI surface with high polarity is almost the same compared to rubbing-aligned TN-LCD. The response time of transcription-aligned TN-LCD decreases with the increasing the polarity of the polymer on all PI surfaces. The decay time of transcription-aligned TN-LCD is slow compared with the rubbing-aligned TN-LCD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.27-30
• /
• 1997

We investigated the electro-optical characteristics of amorphous (a) - twisted nematic (TN) - liquid crystal display (LCD) on polyimide (Pl) films with different polarity. It was found that the threshold voltage of a-TN-LCD is decreased with increasing the polarity of the Pl film. We considered that the threshold voltage in a-TN-LCD is affected to the surface anchoring strength with polarity of the Pl films. Also, we observed the response time of a-TN-LCD on medium polarity of the Pl film is fast compared to high polarity of the Pl film. Finally, we obtained that the viewing angle of a-TN-LCD are almost same on different polarity of the PI films.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1579-1581
• /
• 1997

We investigated the effect of polarity of polyimide(PI) film in amorphous (a) - twisted nematic (TN) - liquid crystal display(LCD) for response time and viewing angle. We found that the domain size of a-TN-LCD on PI film with high polarity is smaller then medium polarity. It is considered that the electro-optical characteristics are strongly dependent on this domain in a-TN-LCD. We observed the response time of a-TN-LCD on PI film with high polarity is slow as comparing to PI film with medium polarity. We suggest that the response time of a-TN-LCD is attributed surface effect between the LCs and the substrates.

• 한국결정성장학회지
• /
• 제18권3호
• /
• pp.97-100
• /
• 2008

HVPE 법에 의해 성장시킨 GaN 박막이 기판에 따라서 극성과 비극성 특성의 변화에 대해 연구하였다. A-plane($11{\bar{2}}0$), C-plane(0001) and M-Plane($10{\bar{1}}0$) 사파이어 기판을 이용하여 $10\;{\mu}m$ 두께의 GaN 박막을 성장하였다. 광학현미경 및 원자력간 현미경(OM, AFM)을 이용해 표면 구조를 관찰하고, HRXD를 통해 이들은 모두 wurtzite 구조를 갖고 C-plane으로 성장시에는, 극성 특성을, A-plane 및 M-plane 성장 시에는 비극성 특성을 가짐을 확인하였으며, Photoluminescence (PL)측정 결과 3.4 eV에서 발광 피크, 2.2 eV에서 yellow luminescence peak를 확인하였다.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제11C권4호
• /
• pp.142-145
• /
• 2001

The residual DC phenomena in the in-plane switching(IPS)-liquid crystal display(LCD) by the voltage-transmittance (V-T) and capacitance-voltage (C-V) hysteresis method on rubbed polyimide (PI) surfaces were studied. We found that the residual DC voltage in the IPS-LCD was decreasing with the increasing concentration of cyano LCs. The residual DC voltage of the IPS-LCD can be improved by the high polarity of cyano LCs.

• 공업화학
• /
• 제18권1호
• /
• pp.71-76
• /
• 2007

수정진동자를 이용한 고분자의 상전이 현상의 해석에 있어서 중요한 인자라 할 수 있는 샘플의 극성 변화에 따른 공진저항의 변화 패턴을 설명하였다. 이를 위하여 친수성 물질로서 PVA (poly vinyl alcohol), 소수성 물질로서 PMMA/PVAc (poly methyl methacrylate/poly vinyl acetate)의 브랜딩 막을 수정진동자 전극 위에 코팅하여 사용하였다. 친수성 물질과 소수성 물질의 상호 비교에서 상전이와 연관하여 공진주파수 변화는 유사하게 나타났지만(같은 변화 Pattern), 공진저항은 서로 다른 변화의 형태로 관찰되었다. 이의 해석을 위하여 공진 파라미터 중의 커패시턴스($C_1$)와 수정진동자 금전극의 극성 등을 고려한 결과, 이러한 다양성이 타당하며, 재료의 극성에 따른 공진저항의 변화를 고려하여야만, 상전이 혹은 다양한 수정진동자 분석에 있어서 정확한 해석이 가능함을 설명하였다.

• EDISON SW 활용 경진대회 논문집
• /
• 제5회(2016년)
• /
• pp.373-376
• /
• 2016

Transition metal dichalcogenides (TMDs) such as $MoS_2$ is the thinnest semiconductor, exhibits promising prospects in the applications of optoelectronics, catalysis and hydrogen storage devices. Uniform and high quality $MoS_2$ is highly desirable in large area for its applications on commercial scale and fundamental research. Many experimental techniques i.e CVD have been developed to successfully synthesis $MoS_2$ on large scale, here in this work atomistic detail to understand the growth mechanism is addressed which was greatly overlooked. Here based on first principles calculation we found that polarity of seeding promter (crystal violet considerd in this work) controls the growth mechanism. It is also found that molybdenum destroys the precursor while sulfur adsorption with precursor is favorable.