• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.234-242
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• 1998

Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be $4.568{\AA}$. The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was $5.18{\times}10^5\;sec^{-1}$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.94-106
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• 1995

A three-dimensional(3D) Monte Carlo simulator for boron ion implantation into <100>single-crystal silicon considering the mask structure has been developed to predict the mask-dependent impurity doping profiles of the implanted boron at low energies into the reduced area according to the trend of a reduction in the size of semiconductor devices. All relevant important parameters during ion implantation have been taken into account in this simulator. These are incident energy, tilt and rotation of wafer, orientation of silicon wafer, presence of native silicon dioxide layer, dose, wafer temperature, ion beam divergence, masking thickness, and size and structure of open window in the mask. The one-dimensional(1D) results obtained by using the 3D simulator have been compared with the SIMS experiments to demonstrate its capabilities and confirem its reliability, and we obtained relatively accurate 1D doping profiles. Through these 3D simulations considering the hole structure and its size, we found the mask effects during boron ion implantation process.

• Journal of Powder Materials
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• v.19 no.3
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• pp.220-225
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• 2012

YAG:Ce yellow phosphor particles were synthesized by spray pyrolysis with changing the solution properties and their luminous properties, crystal structure, and morphological changes were studied by using PL measurement, XRD, and SEM analysis. It was clear that the solution properties significantly affected the crystal phase, crystallite size, the PL intensity, and the morphology of YAG:Ce particles. At low calcination temperature, the addition of urea only to the spray solution was helpful to form a pure YAG phase without any impurity phases, as the result, the highest luminescence intensity was achieved at the calcination temperature of $900^{\circ}C$. When the calcination temperatures were larger than $1300^{\circ}C$, however, the YAG particles prepared without any additive showed the highest luminescent intensity. Regardless of the solution conditions, the emission intensity of YAG:Ce particles prepared by spray pyrolysis showed a linear relation with the crystallite size. In terms of the morphology of YAG:Ce particles, the addition of both DCCA and $NH_4OH$ to the spray solution was effective to prepare a spherical and dense structured YAG particles.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.318-331
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• 1995

The c - axis oriented single crystal of $LiNbO_3$ and $LiNbO_3$ : 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of $LiNbO_3$ with those of the other optical materials, the nonlinear optical refractive index ($n_2$) was calcu l lated using the measured refractive index.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• 전기의세계
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• v.17 no.2
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• pp.16-26
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• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.343-348
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• 1987

The effects of salts such as aluminum sulfate as inorganic salt(2-4%), and sodium salts of citrate, tartrate, succinate, potassium tartrate and gelatin as organic salts(0.1%) on the formation of ${\alpha}$-calcium sulfate hemihydrate from by-product gypsum of phosphoric acid process under hydrothermal condition at 123$^{\circ}C$ and 133$^{\circ}C$ were investigated. Aluminum sulfate solution exhibited the catalystic effected on the crystallization of ${\alpha}$-calcium sulfate hemihydrate of which was assumed in the prismatic form, and organic salts solution exhibited little effect on the catalystic action to the crystallization, than inorganic salts. In the acidic solution with sulfuric acid(pH=2), needle like crystal of calcium sulfate hemihydrate was obtained. Hydrothermal process with aluminum sulfate solution also showed certain amounts of impurity removal such as phosphorus penataoxide from calcium sulfate hemihydrate.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.162-165
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• 1991

Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to $10.3{\times}10^3/mm^2$, but the depth of the denuded zone decreased to $5.0{\mu}m$