• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• 한국광물학회지
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• 제28권1호
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• pp.9-16
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• 2015

통영산 해수양식진주를 광택과 모양에 따라 광택이 좋고 둥근(LR; Luster Round) 진주, 광택이 나쁘고 둥근(LLR; LackLuster Round) 진주, 바로크(LLB; LackLuster Baroque) 진주, 이핵(LTN Lackluster Two Nucleus) 진주로 세분하여 비중 측정, 현미경관찰, X선 회절분석, 주사전자현미경관찰 등을 통해 진주의 광택에 영향을 미치는 요인에 대한 광물학적 연구를 수행하였다. 광택이 좋은 진주는 광택이 나쁜 진주에 비해 비중이 약간 낮았지만 모두 상업적인 진주의 비중 내에 포함된다. 진주층 단면의 두께는 광택이 좋고 둥근 진주는 0.3 mm 정도로 균질한 반면, 광택이 나쁘고 둥근 진주는 각각의 진주층 두께는 균일하나 광택이 좋고 둥근 진주에 비해 두께가 얇다. 이핵 진주와 바로크 진주는 한 진주 내에서도 진주층 두께 편차가 상당히 큰 경향을 보였다. 진주의 표면은 광택이 좋은 진주가 광택이 나쁜 진주에 비해 아라고나이트 결정의 성장선이 좁고 선명하다. 광택이 좋은 진주는 광택이 좋지 않은 진주보다 아라고나이트 결정층의 결함이 적으며 배열이 평행하며 두께가 더 얇고, 표면과 내부에서 두께 차이가 작다. 능주층이 있는 경우 능주층과 진주층에서 아라고나이트 이외에 방해석이 포함되며, 광택이 나쁜 경우 방해석 함량이 매우 높다. 능주층이 없는 진주에서는 광택 여부에 상관없이 방해석이 없고 모두 아라고나이트로 구성되어 있다.

• 대한치과보철학회지
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• 제43권3호
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• pp.363-378
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• 2005

Statement of problem. Hydroxyapatite(HA) coated titanium surfaces have not yet showed the reliable osseointegration in various conditions. Purpose. This study was aimed to investigate microstructures, chemical composition, and surface roughness of the surface coated by the hydrothermal method and to evaluate the effect of hydrothermal coating on the cell attachment, as well as cell proliferation. Material and Methods. Commercially pure(c.p.) titanium discs were used as substrates. The HA coating on c.p. titanium discs by hydrothermal method was performed in 0.12M HCl solution mixed with HA(group I) and 0.1M NaOH solution mixed with HA(group II). GroupⅠ was heated at 180 $^{\circ}C$ for 24, 48, and 72 hours. GroupⅡ was heated at 180 $^{\circ}C$ for 12, 24, and 36 hours. And the treated surfaces were evaluated by Scanning electron microscopy(SEM), Energy dispersive X-ray spectroscopy(EDS), X-ray photoelectron spectroscopy(XPS), X-ray diffraction method(XRD), Confocal laser scanning microscopy(CLSM). And SEM of fibroblast and 3-(4,5- dimethylthiazol-2-yl)-2,5-diphenyl tetrazolium bromide(MTT) assay were used for cellular responses of the treated surfaces. Results. The color of surface changed in both groups after the hydrothermal process. SEM images showed that coating pattern was homogeneous in group II, while inhomogeneous in group I. H72 had rosette-like precipitates. The crystalline structure grew gradually in group II, according to extending treatment period. The long needle-like crystals were prominent in N36. Calcium(Ca) and phosphorus(P) were not detected in H24 and H48 in EDS. In all specimens of group II and H72, Ca was found. Ca and P were identified in all treated groups through the analysis of XPS, but they were amorphous. Surface roughness did not increase in both groups after hydrothermal treatment. The values of surface roughness were not significantly different between groups I and II. According to the SEM images of fibroblasts, cell attachments were oriented and spread well in both treated groups, while they were not in the control group. However, no substantial amount of difference was found between groups I and II. Conclusions. In this study during the hydrothermal process procedure, coating characteristics, including the HA precipitates, crystal growth, and crystalline phases, were more satisfactory in NaOH treated group than in HCl treated group. Still, the biological responses of the modified surface by this method were not fully understood for the two tested groups did not differ significantly. Therefore, more continuous research on the relationship between the surface features and cellular responses seems to be in need.

• 한국재료학회지
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• 제20권6호
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.249-249
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• 2009

We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

• 자원환경지질
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• 제45권5호
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• pp.535-549
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• 2012

이 연구의 주목적은 영광-나주지역에 분포하는 송림-대보화강암류를 지질시대, 광물조성, 화학성분과 조직에 따라 각섬석-흑운모화강섬록암, 흑운모화강암, 반상화강암과 복운모화강암의 네가지 암상으로 구분하였다. 이들 화강암류는 동원마그마로부터 분화된 일련의 분화산물로 이루어진 화성암 복합체이며, 페름기말에서 트라이아스기 사이에 옥천습곡대와 영남육괴 사이에서 지괴들의 충돌운동으로 유발된 응력장하에서 형성되었고, 그리고 이 변형대의 형성기에 전후하여 정치된 화강암류가 대보운동을 받아 엽리상화강암류와 비변형화강암류를 형성하였다. 이들 영광-나주지역에 분포하는 화강암질암류의 구성광물 성분은 사장석, 흑운모. 백운모와 각섬석으로 구성되어있다. 사장석은 오리고클레스($An_{19.3-27.7}$)와 안데신($An_{28.4-31}$)성분에 해당하며 누대구조의 성분변화도 좁은영역에 치우치면 이는 느린 결정작용과 이들 결정들의 성장이 최종고결작용 이전에 일어났음을 보여준다. 흑운모의 Mg 함량은 산소의 압력과 분화도의 증가에 따른다(프로고파이트에서 시데로피라이트로 변함). $Al^{iv}$/$Al^{total}$ 관계는 전체 알루미나양에 따라 증가한다. 백운모는 일차기원이며 높은 $TiO_2$함량을 보이는 세라도나이트이다. 각섬석은 회각섬석류에 속하며 지질압력계로 계산한 화강암질암의 고결심도는 11.3-17.2 Km이다.

• 공업화학
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• 제10권1호
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• pp.105-111
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• 1999

현재 iron silicide막을 제작하고 있는 방법은 열처리를 수행함으로써 막의 계면 상태가 좋지 않으나 플라즈마를 이용하였을 때는 열처리를 수행하지 않으므로 양질의 막을 얻을 수 있다. 본 실험에서 제작된 막은 Raman 스펙트럼 $250cm^{-1}$에서 나타난 Fe와 Si의 진동모드와 FT-IR에 의해 유기화합물 뿐만 아니라 Fe-Si의 결합이 형성되었음을 확인하였다. 또한 플라즈마의 높은 에너지에 의해 낮은 기판 온도에서 에피택시 성장이 진행되는 동안 iron silicide는 [220]/[202], [115] 등과 같은 격자구조를 갖는 ${\beta}$-상으로 성장하였다. 제조된 막의 band gap은 1.182~1.174 eV의 값을 가지고, 광학적 에너지갭을 3.4~3.7 eV의 값을 나타내었다. 막 내의 유기화합물에 의해 유발되는 Urbach tail과 sub-band-gap 흡수가 관측되었다. 따라서 플라즈마를 이용하여 제작된 막은 단일결정이 성장되어 양질의 박막을 얻을 수 있음을 확인하였다.

• 한국재료학회지
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• 제4권1호
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• pp.37-43
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• 1994

Y-BA-Cu-O계 고온초전도체의 미세조직을 가공과 열처리로써 제어하여 조직의 배향화와 치밀화를 기하여 높은 임계전류밀도($J_c$)를 갖는 초전도체의 개발을 목적으로sinter forging법으로 Y-BA-Cu-O/Ag 고온초전도복합체를 제조하였다. sinter forging을 통하여 고온 초전도체의 미세조직의 texture화를 가져왔으며, 이 경우 (123)결정립의 C축 방위가 단일축의 압축방향으로 배향화 되었다. 한편, texture의 orientation facter는 고온일수록, 압력이 클수록 크고, 조직의 배향화도 뚜렷하였으며 그에 따라 $J_c$역시 증가하였다. 이러한 결과로 미루어 결정의 배향도는 $J_c$를 좌우하는 중요한 변수라고 사려되었다. 또한 sinter forging 시킨Y-MA-Cu-O/Ag 복합체의 on set온도는 sinter forging온도에 크게 의존치 않았으나, 고온일수록 off set 온도($T_c\;^{zero}$)가 다소 떨어졌다. 한편, 첨가된 Ag는 주고(123)결정입계에 존재하였으며, 이들이 (123)결정립간의 결합을 촉진시켜 임계전류밀도를 크게 향상시켰으며, Y-BA-Cu-O/Ag 복합체의 $J_c$는 2,000 A/$\textrm{cm}^2$ 이상이었다.

• 한국재료학회지
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• 제4권1호
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• pp.81-89
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• 1994

전자빔 증착법을 사용하여 10nm두께의 Ti과 18nm두께의 Co를 Si(100)기판에 증착한 후, $N_{2}$분위기에서 $900^{\circ}C$, 20초 급속 열처리하여, Co/Ti 이중금속박막의 역전을 유도함으로서 $CoSi_{2}$박막을 형성하였다. 4점 탐침기로 측정한 면저항은 3.9Ω/ㅁ 었으며, 열처리 시간을 증가해도 이값은 유지하여 열적 안정성을 나타내었다. XRD 결과는 형성된 실리사이드는 기판과 에피관계를 갖는 $CoSi_{2}$상 임을 보였으며, SEM 사진은 평탄한 표면을 나타내었다. 단면 TEM 사진은 기판위에 형성된 박막층은 70nm 두께의 $CoSi_{2}$ 에피박막과 그위에 두개의 C0-Ri-Si합금층등 세개의 층으로 되어 있음을 보였다. AES 분석은, 기판상의 자연산화막을 형성할 수 있었음을 보여주었다. AES분석은, 기판상의 잔연산화막이 열처리초기, Ti에 의해 제거된후 Co가 원자적으로 깨끗한 Si기판에 확산하여 $CoSi_{2}$에피박막을 형성할 수 있었음을 보여주었다. $700^{\circ}C$, 20초 + $900^{\circ}C$, 20초 이중 열처리를 한 경우, $CoSi_{2}$결정성장으로 면저항값은 약간 낮아졌으나, 박막의 표면과 계면이 거칠었다. 이 $CoSi_{2}$에피박막의 실제 소자에의 적용방안과 막의 역전을 통한 에피박막형성의 기제를 열역학 및 kinetics 관점에서 고찰하였다.