• ETRI Journal
• /
• v.34 no.5
• /
• pp.779-782
• /
• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.1
• /
• pp.24-33
• /
• 1998

Effects of pH and supporting salts on the characteristics of electrogalvanzied coating in sulfate bath are investigated. The fine grain size is obtained and the whiteness with the amount of supporting salts or pH increased at more than current density of 100A/$dm^2$<\TEX>, With supporting salts increased, the electro-conductivity of the bulk solution increases and the cell voltage decreases, while the width of the cathode burned edge gets wider because it seems that the increased overpotential the vicinity of cathode causes the decreases, of limiting current density. When the amount of supporting salts or pH of sulfate bath decreases, the zinc crystals have preferred orientation (001) planes. However when the amount of supporting salts or pH increase, the crystal texture has less (001) planes and gets to have random crystal planes.

• Journal of Korea Foundry Society
• /
• v.32 no.1
• /
• pp.16-23
• /
• 2012

In this study, we develop the lower pressure die casting with rheo-forming process of A356 aluminum alloy and vacuum system which can control the crystal size and obtain the high strengthened-light material. Using this process, we fabricate the thin plate for bipolar plate through the low pressure die casting with electromagnetic stirring and vacuum-evacuation which can control the crystal grain by electromagnetic stirring. Thin plate ($110mm{\times}130mm{\times}1mm$) is fabricated by this process. The average Vickers hardness of thin plate is about 77 HV.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.87-90
• /
• 1998

ABSTRACT- we have analyzed the effect of microstructure and interface conditions on the anisotropic exchange filelds of NiO/NiFe bilayers. The NiO films were deposited by R.F. magentron sputtering. By using different atgon pressure NiO Films, Grain Size And Surface Roughness Of NiO can be manipulated. The exchange field is enhanced in the small granined NiO And This Increment Is Based On The Formation Of Small Domains In NiO

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.199-204
• /
• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

• Journal of Powder Materials
• /
• v.13 no.5 s.58
• /
• pp.336-339
• /
• 2006

Magnetic properties of nanostructured materials are affected in complicated manner by their microstructure such as pain size (or particle size), internal strain and crystal structure. Thus, studies on the synthesis of nanostructured materials with controlled microstructure are necessary fur a significant improvement in magnetic properties. In the present work, nanostructured Fe-Co alloy powders with a grain size of 50 nm were successfully fabricated from the powder mixtures of (99.9% purity) $FeCl_2$ and $CoCl_2$ by chemical solution mixing and hydrogen reduction.

• Analytical Science and Technology
• /
• v.5 no.1
• /
• pp.115-120
• /
• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.1
• /
• pp.19-23
• /
• 2018

In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x＝0.1 and y＝10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.6
• /
• pp.433-439
• /
• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.233-236
• /
• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.