• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국기계연구소 소보
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• 통권13호
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• pp.15-25
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• 1984

The infrared spectra were determined to discover the characteristics and properties of poff-, PV-, and cc-samples, and studied influence on the formation of mesophase or liquid crystal. The experimental results were as follows; a) Samples with long aliphatic side chain appear cracking texture on temperature forming liquid crystal. b) The fine isotropic microstructure appears in a heterogeneous material containing sulfur, 7.18 w%. c) In the size of molecular weight the lighter than 500 form liquid crystal. d) When poff-sample was treated at $400^{\circ}C$ aliphatic hydrocabon compounds decrease, presented well-oriented bulk liquid crystal.

• 한국세라믹학회지
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• 제29권6호
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• pp.463-470
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• 1992

Corundum single crystals were grown in cryolite flux with the composition of Na3AlF6:Al2O3=80:20 wt%. This mixture was melted at 115$0^{\circ}C$, followed by slow cooling at a rate of 2$^{\circ}C$/hr to 96$0^{\circ}C$. And by adding of La2O3 to the flux, the change of crystal forms were observed. Crystal forms of corundum grown in cryolite flux had the habits of hexagonal plate which consist of well developed {0001} face and small {101} face. As La2O3 was added and its content was increased, {223} and {110} faces were developed, and crystal habits of equidimensional forms changed into hexagonal prism form. In a charge of 8 mole% B2O3, Al2O3:La2O3=15:1, transparent corundum single crystals of equent form were grown. As the content of B2O3 was increased, twineed crystals which have twin law of 2-fold parallel to [0001], and composition plane of (110) were grown.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Composites Research
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• 제29권4호
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• pp.145-150
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• 2016

Polyvinylidene fluoride (PVDF)는 압전성을 나타내는 대표적인 고분자로 1960년대부터 많은 연구가 진행되어 왔다. PVDF는 반결정의 고분자로써 5가지의 결정 구조(${\alpha}$, ${\beta}$, ${\gamma}$, ${\delta}$, 그리고 ${\varepsilon}$형)로 구성되어 있다. ${\alpha}$형과 ${\delta}$형 결정은 전기적으로 반응하지 않는 무극성 결정구조이나 ${\beta}$형, ${\gamma}$형 그리고 ${\varepsilon}$형은 전기적으로 반응하는 극성 결정구조이다. 그 중에서도 ${\beta}$형 결정구조는 트랜스 형 분자 쇄가 평행으로 충진 된 형태로서 PVDF 단위체가 갖는 영구 쌍극자가 모두 한 방향으로 배열되어 있는 구조이기 때문에 자발 분극이 커지게 되고 압전성을 나타내게 된다. 일반적으로 ${\beta}$형 결정구조는 연신을 통한 ${\alpha}$형 결정구조의 변환을 통하여 얻을 수 있고, 연신 후 후처리 공정을 통해 그 양을 증가시킬 수 있다. 습식방사로 제조된 PVDF 섬유는 응고욕에서 극성 용매의 확산 메커니즘에 의해 ${\beta}$형 결정구조가 형성되는 장점을 가지고 있지만 극성 용매가 빠져나감과 동시에 섬유 고화가 진행되기 때문에 용매의 확산 경로가 섬유 내부 기공으로 남게 되는 단점을 가지고 있다. 이 기공은 폴링(Poling) 공정에서 전기장에 의한 분극을 방해하여 그 효과를 감소시키는 역할을 한다. 또한, PVDF 섬유가 압전 특성을 필요로 하는 응용분야에 사용되기 위해서는 섬유 가공 후에 전극이 반드시 부착되어야 하는데 섬유 형태로 제조된 PVDF에 전극을 형성하기는 매우 어렵다. 본 연구에서는 압전성을 갖는 PVDF 섬유를 습식 방사와 건식 방사의 혼합 공정으로 제조하여 기공 문제를 해결하였고, 전극이 섬유 내부에 삽입된 Core/Shell 형태의 PVDF 섬유를 제조하여 까다로운 전극형성 문제를 해결하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.33-33
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• 1998

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.

• Journal of Pharmaceutical Investigation
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• 제15권1호
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• pp.8-14
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• 1985

Data obtained from X-ray diffractometry, thermal analysis, IR spectroscopy and microscopic observation were used for the identification and characterization of four crystalline modifications of piroxicam. form a was crystallized from sodium hydroxide-hydrochloric acid and from c was obtained by crystallization from toluene. Form b and d was crystallized from methanol under the different temperature conditions. Relative rates of dissolution and solubility of four crystal forms of piroxicam in distilled water were measured.

• Journal of Pharmaceutical Investigation
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• 제28권2호
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• pp.115-119
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• 1998

Five polymorphic modifications of Cephradin were prepared by recrystallization from organic solvents. The isolated crystal forms were characterized by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and X-ray crystallography powder diffractometry. Modificaition 1 was the most stable form and decomposed at $201.3^{\circ}C$. Modification 3 and 4 were metastable. The dissolution of modification 3 and 4 was faster than that of marketed form.