• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.10-10
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• 1992

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.561-574
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• 2009

First ex-vessel core catcher has been applied to the practical design of NPPs with VVER-1000 reactors built in China (Tyanvan) and India (Kudankulam) for severe accident management (SAM) and mitigation of SA consequences. The paper presents the concept and basic design of this crucible-type core catcher as well as an evaluation of its efficiency. The important role of oxidic sacrificial material is discussed. Insight into the behaviour of the molten pool, which forms in the catcher after core relocation from the reactor vessel, is provided. It is shown that heat loads on the water-cooled vessel walls are kept within acceptable limits and that the necessary margins for departure from nucleate boiling (DNB) and of vessel failure caused by thermo-mechanical stress are satisfactorily provided for.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.191-194
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• 2008

We will focus on the horizontal Bridgman growth system to analyze the transport phenomena numerically, because the simple furnace system and the confined growth environment allow for the precise understanding of the transport phenomena in solidification process. In conventional melt growth process, the dopant concentration tends to vary significantly along the crystal. In this work, we propose the modification of crucible geometry for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical analysis has been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that proposed method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.27-40
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• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.553-559
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• 1990

The nonuniform shrinkage has been investigaed in pressureless sintering of $\alpha$-SiC, where born carbide and phenolic resin as a carbon source are used as densification aids. Compacted specimens, prepared from the granulated powder, were sintered at 215$0^{\circ}C$ for 30min in Ar atmosphere. Using the fresh and unseasoned graphite crucible, the upwarped specimens were obtained, while specimens were uniformly shrunk in the seasoned crucible. This effect is mainly due to the nonuniform distributjion of boron carbide during heatig, which originates in the reaction of boron carbide with CO gas, providing from the result of SiO2 reduction with carbon during heating.

• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.247-253
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• 2000

Titanium was melted in the CaO-coated alumina crucible and the reaction between the melt and the coating layer was negligible. The volume fraction of the gas porosity was decreased with increasing pressure and the sound bar castings with no porosity was obtained under the Ar atmosphere of the pressure of $300kN/mm^2$. The surface of the casting obtained from CaO-coated graphite mold was slightly rougher than that from graphite without coating. The reaction product of titanium melt with the layer of CaO was mainly titanium oxide and that with graphite crucible was titanium cabide with small amount of titanium nitride.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.454-458
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• 1999

Hydrodynamic Thermal Capilary Model developed previously has been modified to study the transport phenomena in the Czochralski process. Our analysis is focused on the heat transfer in the system, convection in the melt phase, and the meniscus and interface shape. Four major forces drive melt flow in the crucible, which include thermal buoyancy force in the melt, thermocapillary force along the curved meniscus, crucible rotation and crystal rotation. Individual flow mechanism due to each driving force has been examined to determine its interaction with the meniscus and interface shape. A nominal 4-inch-diameter silicon crystal growth process is chosen as a subject for analysis. Heater temperature profile for constant diameter crystal is also present as a function of crystal height or fraction solidified.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.35-40
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• 1998

There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.