• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• Progress in Superconductivity
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• 제8권1호
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• pp.71-74
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• 2006

High $J_c$ over 1 $MA/cm^2$ YBCO film has been successfully prepared using nitrate precursors by spray pyrolysis method. Aerosol drolpets generated using a concentric spray nozzle were directly sprayed on a $LaAlO_3$(100) single crystal substrate. The cation ratio of precursor solution was Y:Ba:Cu=1:2.65:1.35. The distance between nozzle and substrate was 15 cm. Deposition temperature was ranging from $750^{\circ}C\;to\;800^{\circ}C$. Deposition pressure was 100 Torr, and oxygen partial pressure was varied from 10 Torr to 50 Torr. The microstructure, phase formation, texture development and superconducting properties of deposited films were largely changed with oxygen partial pressure. Deposited films showed a texture with(001) planes parallel to substrate plane. High quality film was obtained when film was deposited at $760^{\circ}C$ with an oxygen partial pressure of 30 Torr. The critical current density($J_c$) of the YBCO film was 1.75 $MA/cm^2$ at 77 K and self-field.

• Progress in Superconductivity
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• 제8권1호
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• pp.108-112
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• 2006

We fabricated Bi-2212/$SrSO_4$ bulk superconductors by the casting process and evaluated the effects of the powder mixing method and annealing temperature on the texture, microstructure, and critical current. In the process, the Bi-2212 powders were mixed with $SrSO_4$ by hand-mixing(HM) and planetary ball milling(PBM) method and then the powder mixtures were melted at $1100^{\circ}C{\sim}1200^{\circ}C$, solidified, and annealed. We observed that the rod made by the PBM had a more homogeneous microstructure and smaller $SrSO_4$ and second phases than that of the rod made by the HM, resulting in increased $I_c$. The $I_c$ of the rod also depended on the annealing temperature and the highest $I_c$ was obtained to be 200 A when prepared by HM at $1200^{\circ}C$ and annealed at $810^{\circ}C$ which is probably due to the moderate density and 2212 texture and the smaller and less second phase compared to that at higher temperature. The possible causes of the variations of $I_c$ with the powder mixing method and annealing temperature were related to the microstructural evolution based on the SEM, EPMA, and DTA analyses.

• Progress in Superconductivity
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• 제8권1호
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Progress in Superconductivity
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• 제8권2호
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• pp.186-192
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• 2007

High $J_c\;YBa_2Cu_3O_{7-x}$ superconducting films have been fabricated $LaAlO_3(100)$ substrate by MOD method using dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Heating rate was varied in order to optimize the calcination heat treatment condition in DCA-MOD method. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing humid oxygen atmosphere. The heating rate was calcined from $13.3^{\circ}C/min\;to\;0.28^{\circ}C/min$. Conversion heat treatment was performed $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. Surface and cross sectional SEM microstructures showed that particle sizes were increased with heating rate at a calcination step. The amount of pores was increased with heating rate in the calcined films. Dense microstructure and sharp texture were developed in an YBCO films after conversion heat treatment. A high critical current density (Jc) of $1.26MA/cm^2$ (@77 K and self-field) was obtained for the YBCO film which was prepared with a heating rate of $0.28^{\circ}C/min$.

• Progress in Superconductivity
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• 제10권1호
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• pp.12-16
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• 2008

In this work, nano size $BaCeO_3$, which is a possible flux pinning medium of melt processed $YBa_{2}Cu_{3}O_x$ superconductor, was synthesized by the conventional solid state reaction method using powders. $BaCeO_3$ and $CeO_2$ were mixed thoroughly using a ball milling for 24 hours and calcined at $1200^{\circ}C$ for 5 hours for the formation $BaCeO_3$ powder. The obtained $BaCeO_3$ powder was attrition milled at various milling times of 60 min, 120 min and 240 min. The $BaCeO_3$ powders of various milling times were mixed with $YBa_{2}Cu_{3}O_x$ powder. Seed melt processed $YBa_{2}Cu_{3}O_x$-$BaCeO_3$ (15wt.%) superconductors were prepared and the superconducting properties were investigated. It was found that $T_c$ of $Y_{1.5}Ba_{2}Cu_{3}O_x$ samples was not significantly affected by $BaCeO_3$ addition, but $J_c$ of samples was increased by $BaCeO_3$ addition. The $J_c$ improvement by fine $BaCeO_3$ powder (120 min attrition-milled) was effective at low magnetic fields less than 2 T.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• 한국분말재료학회지
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• 제21권3호
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• pp.179-184
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• 2014

In this study, we prepare polymer solar cells incorporating organic ligand-modified Ag nanoparticles (O-AgNPs) highly dispersed in the P3HT:PCBM layer. Ag nanoparticles decorated with water-dispersible ligands (WAgNPs) were also utilized as a control sample. The existence of the ligands on the Ag surface was confirmed by FT-IR spectra. Metal nanoparticles with different surface chemistries exhibited different dispersion tendencies. O-AgNPs were highly dispersed even at high concentrations, whereas W-AgNPs exhibited significant aggregation in the polymer layer. Both dispersion and blending concentration of the Ag nanoparticles in P3HT:PCBM matrix had critical effects on the device performance as well as light absorption. The significant changes in short-circuit current density ($J_{SC}$) of the solar cells seemed to be related to the change in the polymer morphology according to the concentration of AgNPs introduced. These findings suggested the importance of uniform dispersion of plasmonic metal nanoparticles and their blending concentration conditions in order to boost the solar cell performance.

• 한국재료학회지
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• 제8권5호
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• pp.394-398
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• 1998

은(Ag)의 첨가가$ YBa_{2}$$Cu_{3}$$O_{7-\delta}$ (YBCO) 고온초전도체의 미세조직, 기계적 및 전기적 성질에 미치는 효과를 연구하였다. 소량의 Af(5, 10, 15 vol.%)는 각각 금속분말상태와 질산염인 $AgNO_{3}$초전도체의 강도와 인성값이 Ag의 함량이 증가할수록 높게 나타났으며, 이는 Ag입자에 의해 야기되는 강화기루에 의한 것으로 생각된다. 또한 Ag를 질산염의 분말상태로 첨가하여 만든 YBCO-Ag 복합재료가 금속분말상태로 첨가하여 만들었을 때보다 강도 및 인성값이 더 우수한 것으로 나타났다. $AgNO_{3}$를 첨가한 복합체가 상대적으로 더 우수한 기계적 성질을 가지는 것은 Ag 입자가 더 미세하고 균일하게 분포되었기 때문으로 판단된다. Ag 첨가로 인해 YBCO 복합초전도체의 전류밀도값은 미세하게 증가하는 것으로 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.