• Title/Summary/Keyword: Cr-O-N

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Preparation of High Specific Activity $^{51}Cr$

  • Kim, Taeyoung;Kim, Young-Kuk
    • Nuclear Engineering and Technology
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    • 제3권1호
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    • pp.15-19
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    • 1971
  • High specific activity $^{51}$ Cr is mainly prepared by Szilard-Chalmers process from $K_2$CrO$_4$target. Usually the recoil atom, Cr* (III), is coprecipitated with Fe(III) as a scavenger to be separated from $K_2$CrO$_4$. A new preparation method has been developed, by adding 0.1N NaOH and $C_2$H$^{5}$ OH to the irradiated target solution, to precipitate Cr* (III) without any scavenger such as Fe(III). The new method gives the product of higher specific activity and better yield than that of other methods, in the shorter processing time. This method is compared with the conventional method and the French method, and following results are obtained: the new method gives specific activity more than twice that of the conventional method and better yield than the conventional method : the French method and the new method give similar specific activity, but yield of the new method is almost twice that of the French method.

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Kinetic Study on the Oxidation Reaction of Alcohols by Cr(VI)-Quinoline Compound (크롬(VI)-퀴놀린 화합물에 의한 알코올류의 산화반응에 대한 반응속도론적 연구)

  • Park, Young-Cho;Kim, Soo-Jong
    • Journal of Convergence for Information Technology
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    • 제11권9호
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    • pp.109-114
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    • 2021
  • Cr(VI)-quinoline compound[(C9H7NH)2Cr2O7] was synthesized by the reaction between of quinoline and chromium(VI) trioxide, and structure was FT-IR, elemental analysis. The oxidation ability of benzyl alcohol greatly depends upon the dielectric constant of the used organic solvent, where carbon tetrachloride was worst and N,N'-dimethylformamide was best solvent. Noticeably, in N,N'-dimethylformamide solvent, Cr(VI)-quinoline compound oxidized substituted benzyl alcohols. The Hammett reaction constant(ρ)=-0.69(303K). As a resuit, Cr(VI)-quinoline compound was found as efficicent oxidizing agent that converted benzyl alcohol, allyl alcohol, primary alcohol and secondary alcohols to the corresponding aldehydes or ketones. Cr(VI)-quinoline compound was selective oxidizing agent of benzyl alcohol, allyl alcohol and primary alcohol in the presence of secondary alcohol ones.

공구의 내구성 향상을 위한 AlCr 계 타겟 제조 및 박막 제작

  • Lee, Han-Chan;Yun, Hye-Won;O, Se-Pil;Jeong, Hun;Mun, Gyeong-Il
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.37.1-37.1
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    • 2018
  • 공구의 내구성 향상을 위해서는 고경도, 고내마모, 고내열 특성 등의 우수한 물성을 필요로 한다. 공구에 적용되고 있는 코팅으로는 높은 경도와 낮은 마찰계수를 가지는 TiN, TiCN 코팅이 사용되다가 내산화 특성을 향상시키기 위해 TiAlN, CrAl, CrN 과 같은 코팅이 사용되었다. 하지만 최근 난삭재 및 고강도의 재료를 가공하기 위해서 더 높은 경도, 내열, 내산화 특성 등이 요구되고 있으며 최근에는 AlCr 기반의 코팅재료들이 각광받고 있다. 본 연구에서는 우수한 고경도, 고내열 등의 특성을 가지는 코팅 재료를 개발하기 위해서 AlCr 계의 2원계, 3원계 합금설계을 진행하였고 타겟화 하였다. 제작한 타겟을 이용하여 PVD 코팅 공정을 통해 코팅을 제작하였고 경도, 밀착력, 내열 등의 특성 분석을 진행하였다.

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Structural Properties of Ammoniated Thin Cr Films with Oxygen Incorporated During Deposition (산소가 혼입된 Cr 박막의 질화처리에 따른 구조적 특성)

  • Kim, Jun;Byun, Changsob;Kim, Seontai
    • Korean Journal of Materials Research
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    • 제24권4호
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    • pp.194-200
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    • 2014
  • Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

A study on TCR characteristic of $TaN/Al_{2}O_{3}$ thin film resistors ($TaN/Al_{2}O_{3}$ 박막 저항소자 개발에 관한 연구)

  • Kim, I.S.;Cho, Y.R.;Min, B.K.;Song, J.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.82-85
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    • 2002
  • In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

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Analysis of a.c. Characteristics in Cr-doped ZnO Using Dielectric Functions (Cr을 첨가한 ZnO의 유전함수를 이용한 a.c. 특성 분석)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.16-16
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    • 2009
  • ZnO($Zn_{1+x}O$)는 n-type 반도성 세라믹스로 우수한 전기적, 광학적, 화학적 특성을 갖고 있어 바리스터, 투명 전도막, 화학 및 바이오 센서, UV light emitter 등 다양한 용도로 사용되고 있다. 또한 ZnO에 각종 천이 금속 산화물을 일정량 첨가함에 따라 발생하는 결함준위와 입계 특성의 변화에 대한 연구가 활발히 진행되고 있다. 다양한 천이 금속 산화물의 첨가에 따른 전기적 광학적 특성의 변화에 대한 결과들이 많이 보고되고 있지만 서로 상충되거나 해석상 다소 어려운 것으로 알려져 있다. 따라서 본 연구에서는 ZnO에 $Cr_2O_3$를 2.0 at% 첨가하여 Cr 첨가에 따른 ZnO의 결함준위와 입계 특성 변화에 대하여 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, and $tan{\delta}$)를 이용하여 고찰하였다 ZnO에 Cr을 첨가할 경우 결함 중 장범위 쿨롱 인력에 의한 결함(0.13~0.18 eV)이 ~100K 영역에서 나타났으며, ZnO 내 결함 중 대표적인 $Zn_j$$V_o$는 서로 겹쳐서 나타났다. 이들 중첩된 결함에 대하여 각종 유전함수를 이용할 경우 서로 분리해 낼 수 있는 강점이 있음을 논하였다. 또한 각 결함준위가 강는 정전용랑(C)과 저항(R)을 impedance-modulus spectroscopy를 이용하여 구한 결과, 소결온도가 높아질수록 정전용량은 증가하였으며, 측정온도가 놓아질수록 높아지는 경향을 나타내었다. 입계의 정전용량은 소결온도가 높아질수록 높아 지지만 측정온도가 높아질수록 낮아지는 경향을 나타내었다. 각 저항값은 소결온도 및 측정온도가 높아질수록 지수적으로 감소하였다. 또한 분포함수를 이용하여 입계 안정성에 대하여 고찰하였다.

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The Structural and Electrical Properties of NiCr Alloy for the Bottom Electrode of High Dielectric(Ba,Sr)Ti O3(BST) Thin Films

  • Lee, Eung-Min;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • 제4권1호
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    • pp.15-20
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    • 2003
  • NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

Structure of Tris(biuret)chromium(III) Perchlorate Monohydrate (Tris(biuret)chromium(III) Perchlorate Monohydrate의 구조)

  • 박영자
    • Korean Journal of Crystallography
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    • 제9권2호
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    • pp.143-148
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    • 1998
  • Tris(biuret)chromium(III) Perchlorate Monohydrate (Cr(C2H5N3O2)3·(ClO4)3·H2O)의 결정 및 분자구조를 X-선 회절법으로 연구하였다. 결정의 공간군은 P, a=10.486(3) , b=11.371(5) , c=11.485(4) , α=88.70(3)o β=66.85(3)0, γ=67.11(3)o, V=1146.2(7) 3가 Z=2이다. 회절반점들의 세기는 Enraf-Noninus CAD-4 Diffractometer로 얻었으며, MoKα radiation X-선을 사용하였다. 분자구조는 직접법으로 풀었으며 최소자승법으로 정밀화하였다. 최종 신뢰도 R값은 1528개의 회절반점에 대하여 0.114이었다. Tris(biuret)chromium(III) cation은 octahedral 배열을 하고 있으며, 평균 Cr-O 결합길이는 1.94 이다. 모든 perchlorate anion은 각각 두가지 위치로 disorder되어 있다. 양이온과 음이온들은 물분자들을 포함한 수소결합들로 결합되어 결정을 이루고 있다. 양이온내의 모든 N-H가 모두 수소결합에 참여하고 있다.

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Development of a Multiplex PCR Method to Detect Fungal Pathogens for Quarantine on Exported Cacti

  • Cho, Hyun ji;Hong, Seong Won;Kim, Hyun-ju;Kwak, Youn-Sig
    • The Plant Pathology Journal
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    • 제32권1호
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    • pp.53-57
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    • 2016
  • Major diseases in grafted cacti have been reported and Fusarium oxysporum, Bipolaris cactivora, Phytophthora spp. and Collectotrichum spp. are known as causal pathogens. These pathogens can lead to plant death after infection. Therefore, some European countries have quarantined imported cacti that are infected with specific fungal pathogens. Consequently, we developed PCR detection methods to identify four quarantined fungal pathogens and reduce export rejection rates of Korean grafted cacti. The pathogen specific primer sets F.oF-F.oR, B.CF-B.CR, P.nF-P.nR, and P.cF-P.CR were tested for F. oxysporum, B.cactivora, P. nicotinae, and P. cactorum, respectively. The F.oF-F.oR primer set was designed from the Fusarium ITS region; the B.CF-B.CR and P.nF-P.nR primers respectively from Bipolaris and Phytophthora ITS1; and the P.cF-P.CR primer set from the Ypt1protein gene region. The quarantine fungal pathogen primer pairs were amplified to the specific number of base pairs in each of the following fungal pathogens: 210-bp (F. oxysporum), 510-bp (B. cactivora), 313-bp (P. nicotinae), and 447-bp (P. cactorum). The detection limit for the mono- and multiplex PCR primer sets was 0.1 ng of template DNA under in vitro conditions. Therefore, each primer set successfully diagnosed contamination of quarantine pathogens in export grafted cacti. Consequently, our methodology is a viable tool to screen contamination of the fungal pathogen in exported grafted cacti.

Crystal Growth of $Cr:Al_2O_3$ and $Ti:Al_2O_3$ by Czochralski Technique (용액인상법에 의한 $Cr:Al_2O_3$$Ti:Al_2O_3$ 단결정 육성)

  • Yu, Yeong-Mun;Lee, Yeong-Guk;Park, Ro-Hak
    • Korean Journal of Crystallography
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    • 제6권1호
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    • pp.1-13
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    • 1995
  • Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

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