• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.91-96
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• 2003

Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.63-67
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• 2014

As the demand for fine-pitch FPCB (Flexible Printed Circuit Board) increases, so do the number of applications of sputtered FCCL (Flexible Copper Clad Laminate). Furthermore, as the width between the circuit patterns decreases, greater defects are observed in the migration phenomenon. In this study we observed changes in ion migration in real circuit-pattern width using sputtered FCCL. We found that as the applied voltage and residue thickness of the NiCr seeds increase, ion migration occurs faster. If the NiCr seed layer thickens due to a high cathode power and long deposition time while being sputtered, the NiCr will form a residue that quickly becomes a factor for incurring ion migration.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.63-71
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• 2001

The effects of an Ag seed layer on the magnetic properties and the microstructural evolution of SmCo/Cr thin films deposited on glass substrates were investigated. Coercivity of the films is 2.0 kOe when the thickness of Ag seed layer was 1nm thick, but it increased to 2.7 kOe when the Ag seed layer thickness is 3 nm. The increase of coercivity for film with 3 nm-thick Ag is due to roughness of Cr and grain size of Cr by the Ag microbumps. Ar partial pressure influenced on the formation of Ag microbumps, for example, they were formed at 5 mTorr when Ag thickness was 1 nm. The mechanism of magnetization reversal of the SmCo films changed from domain wall motion to domain rotation as the Ag inserted. This was thought to be due to inhibition of domain wall motion by the reduction of Cr grain size and the increase of roughness.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.141-141
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• 2012

고종횡비 10:1 비아를 Si wafer 상에 형성하기 위해 $7{\mu}m$ 직경의 마스크로 포토작업하여 Cr층을 100nm 스퍼터링하여 PR(photo resistor) 대신의 에칭 barrier 막으로 사용하였다. 얼라인, 노광, 현상을 거쳐 Cr에칭, PR 제거후 ICP(inductively coupled plasma) 공정으로 Si deep etching하여 via 직경 $10.16{\mu}m$, 깊이 $102.5{\mu}m$의 고종횡비 비아를 형성하였다. 구리필링도금을 위해서 필수적인 seed layer는 단층 또는 다층의 금속막을 스퍼터링 법으로 형성하였다. 형성된 seed layer 단면을 FE-SEM(Field emission scanning electron microscope)으로 관찰하여 내부에 seed 층의 형성 유무를 확인하였다.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• Journal of Magnetics
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• v.21 no.1
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.793-796
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• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.75-75
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• 2009

연성회로기판은 일반적으로 절연체를 이루는 폴리이미드와 전도체를 이루는 구리로 구성되어 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 기계적 특성, 공정성 등의 장점으로 인해 연성회로기판의 절연체로서 제안되었지만 전도체를 이루는 구리와의 접합 특성이 우수하지 않기 때문에 많은 연구가 현재까지 진행되고 있고, 그 결과 연성회로기판의 접합 특성에 많은 개선이 이루어짐과 동시에 다양한 공정 방법이 제안되고 있다. 하지만 고온다습한 환경에서 사용될 경우 폴리이미드의 높은 흡습성과, 구리와 seed layer의 산화 문제로 인해 접합 특성이 저하된다는 단점 또한 가지고 있다. 따라서 본 연구를 통해 고온다습한 조건하에서 seed layer가 80Ni/20Cr 합금으로 구성된 연성회로기판의 seed layer의 두께와 시효시간으로 인해 발생하는 접합 신뢰성의 차이를 관찰하였다. 본 연구에서는 두께 $25{\mu}m$의 폴리이미드 위에 각각 100, 200, $300{\AA}$ 두께의 80Ni/20Cr의 합금 조성을 가지는 seed layer를 스퍼터링 공정을 통해 형성한 후 전해도금법을 이용하여 $8{\mu}m$ 두께의 구리 전도층을 형성하였다. 접합 특성 평가를 위해 ICP 규격에 따라 전도층 패턴을 폭 3.2mm, 길이 230mm로 시편을 제작하여 50.8mm/min의 이송 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 또한 $85^{\circ}C$/85% 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효 처리 후 같은 방법으로 연성회로기판의 접합 특성을 평가하였다. 파면의 형상과 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 파면의 잔여물 분석을 위해 EPMA (Energy probe microanalysis)를 사용하였고 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 분석하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.26-27
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• 1998