• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.399-405
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• 2005

Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.705-709
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• 2003

The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1300-1309
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• 2023

Simulated debris was synthesized using UO₂, Zr, and stainless steel and a heat treatment method under inert or oxidizing conditions. The primary U solid phase of the debris synthesized at 1473 K under inert conditions was UO₂, whereas a (U, Zr)O₂ solid solution formed at 1873 K. Under oxidizing conditions, a mixture of U₃O₈ and (Fe, Cr)UO₄ phases formed at 1473 K, whereas a (U, Zr)O_2+x solid solution formed at 1873 K. The leaching behavior of the fission products from the simulated debris was evaluated using two methods: the irradiation method, for which fission products were produced via neutron irradiation, and the doping method, for which trace amounts of non-radioactive elements were doped into the debris. The dissolution behavior of U depended on the properties of the debris and aqueous solution for immersion. Cs, Sr, and Ba leached out regardless of the primary solid phases. The leaching of high-valence Eu and Ru ions was suppressed, possibly owing to their solid-solution reaction with or incorporation into the uranium compounds of the simulated debris.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.157-157
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• 2009

$BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 반도성 전자세라믹스로서 degaussing 소자, 정온 발열체, 온도센서, 전류 제한 소자 등 상업적으로 폭넓게 사용되고 있다. 본 소자는 소결온도, 소결 및 열처리 분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용하여 PTCR 특성이 크게 영향을 받기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 특히 과전류 보호 소자용으로 사용하기 위해서는 상온 비저항을 크게 낮추어야 하며 이에 대한 연구가 계속 진행되고 있다. 따라서 본 연구에서는 SiO2을 0.5~10 at%로 달리한 조성으로 환원 분위기에서 소결하고 공기 중에서 재산화 처리하여 재료의 PTC 특성에 어떠한 영향을 미치는지 분석하였다. 소정의 조성을 선택하여 $1180^{\circ}C{\sim}1240^{\circ}C$에서 2시간 동안 환원분위기에서 소결하고, $800^{\circ}C$에서 1 시간 공기 중에서 재산화 처리한 후 R-T 특성을 측정하여 SiO2 함량에 따른 PTC 특성을 분석하였다. 그 결과 SiO2의 함량이 증가할수록 상온 저항은 낮아지다가 3.0 at% 이상으로 첨가할 경우 급격히 상승하는 경향을 나타내었다. 특히 SiO2를 1.0~3.0 at% 일 때 우수한 PTC 특성을 가졌다. $1180^{\circ}C$에서는 소결 밀도가 낮아 상온 비저항이 크게 높았지만, $1200^{\circ}C{\sim}1220^{\circ}C$에서는 정상 입성장이 나타나면서 일반적인 PTC 특성을 가졌지만, $1240^{\circ}C$ 이상에서는 공정 액상이 형성되어 비정상 입성장이 일어나 상온 비저항이 크게 낮아졌다. 한편 점핑비-log(Rmax/Rmin)는 SiO2 함량이 증가할수록 높아지다가 3.0 at% 이상에서는 낮아짐을 확인하였다.