• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.741-742
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• 2006

This paper deals with an efficient superconducting joint method between 2G high superconducting(HTS) wire, YBCO coated conductor(CC). Recently CC is one of the most promising superconducting wire due to high n-value and critical current independency from external magnetic field. It is expected to be used many superconducting application such as fault current limiter, persistent current system and cable etc. In most HTS applications, superconducting magnet is used, and it is necessary to joint between superconducting wire to fabricate superconducting magnet system. A CC tape used in this research consists of copper stabilizer, silver layer, YBCO layer, buffer and substrate. Direct joint using soldering method was inefficient due to resistance of copper, then copper lamination is removed by chemical etching method to reduce resistance between CC tapes. Jointed tapes were fabricated and tested. Transport current through jointed area and induced voltage were measured to characterize the I-V curve. Resistance between CC wire using chemical etching was compared with resistance of direct jointed tapes using soldering method in this paper.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.298-305
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• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.270-276
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• 2010

Nickel-copper foam electrodes with pore gradient micro framework and nano-ramified wall have been prepared by using an electrochemical deposition process. Growth habit of nickel-copper co-deposits was quite different from that of pure nickel deposit. In particular, the ramified structure of the individual particles was getting clear with chloride ion content in the electrolyte. The ratio of nickel to copper in the deposits decreased with the distance away from the substrate and the more chloride ions in the electrolyte led to the more nickel content throughout the deposits. Compositional analysis for the cross section of a ramified branch, together with tactical selective copper etching, proved that the copper content increased with approaching central region of the cross section. Such a composition gradient actually disappeared after heat treatment. It is anticipated that the pore gradient nickel-copper nanostructured foams presented in this work might be a promising option for the high-performance electrode in functional electrochemical devices.

• Clean Technology
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• v.18 no.2
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• pp.183-190
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• 2012

Electrochemical regeneration of the iron chloride waste solution from PCB etching reduces environmental contamination and produces copper as by-product, so the economic feasibility is high. But iron chloride waste solution contains iron and copper and the reactions occurring in the electrolytic cell are complicated. In this work, the oxidation of iron chloride and copper deposition were examined through batch electrolysis and the optimum conditions of the process parameters were found. The oxidation of ferrous chloride was achieved easily to the desired level. The copper deposition efficiency was high in the reaction using the carbon cathode when the copper density was 12 g/L with the electric current density of $350mA/cm^2$, and the ratio of the $Fe^{2+}$ ion was high. In addition, the possibility of the scale-up was confirmed in continuous operation of bench reactor using the optimum conditions obtained.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2227-2232
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• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.923-928
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• 2001

An electrolytic silver plating process has been successfully developed for terminated electrode parts of dielectric ceramic resonator. High adhesion strength and high Qu is obtained and blister occurance is minimized under plating condition with $HNO_3$750 $m\ell/\ell$ and HF $ 250m\ell/\ell$ solution at $25^{\circ}C$ for 20 minutes. Adhesion strength has the highest value, 3.2 kg/mm$^2$ at etching temperature of $25^{\circ}C$. Adhesion strength, Qu and blister occurance are monotonically increased with the thickness of electrodeposition layer. In case of electrodeposition of Ag, Qu value of 380 has obtained higher than in case of electrolytic Cu plating with Qu value of 325. Therefore, terminated electrode parts of dielectric ceramic resonator reducing dielectric loss can be obtained using prensent process.

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.9-13
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• 2002

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.397-401
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• 2008

Most of the topic in PCB industry was about increasing the volume of product for the development of electronics in numerous industrial application area. However, it has been emerged that yield improvement quality manufacturing via detecting any suspicious process in order to minimize the scrapped product and material waste. In addition, recently, restriction of hazardous substances (RoHS) claims that electronic manufacturing environment should reduce the harmful chemicals usage, thus the importance of monitoring copper etchant and detecting any mis-processing is crucial for electronics manufacturing. In this paper, we have developed real-time chemical monitoring system using RGB sensor, which is simpler but more accurate method than commercially utilized oxidation reduction potential (ORP) technique. The developed Cu etchant monitoring system can further be utilized for copper interconnect process in future nano-semiconductor process.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.104-106
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• 2001

In this paper, it is object of design of high efficiency slotless BLDC motor using film coil. Slotless BLDC motor is able to have high efficiency property and low cogging torque, due to magnetization of stator core have constant contribution by slotless core. But it is difficult to make coil winding of slotless BLDC motor. So we make amateur of slotless BLDC motor using film coil. Film coil is fabricated by drilling, electro-plating and etching of copper/insulator/copper plate. In this paper, after design of slotless BLDC motor for moving axial blower, it is fabricated by NdFeB permanent magnet type rotor and film coil.