• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• Laser Solutions
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• v.16 no.4
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• pp.17-23
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• 2013

The research for the development of roll-to-roll printing process is actively underway on behalf of the existing semiconductor process. The roll-to-roll printing system can make the electronic devices to low-cost mass production. This study is performed for developing the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser engraving technology is used to create printable roll and the printable roll is made out of the chrome coated roll after coating copper and polymer on the surface of steel roll, ablating the polymer on the surface of roll and etching the roll. The 3 dimensional laser scanner and roll rotating systems are constructed and the system control program is developed. We have used the fiber laser of 100 W grade, the 3 dimensional laser scanner and the 3 axes moving stage system with a rotating axis. We have found the optimal conditions by performing the laser patterning experiments and can make the minimum line width of $24{\mu}m$ by using the developed 3 dimensional laser scanner system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.343-346
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• 2003

A systematic study of Cu CMP in terms of the effect of slurry chemicals(oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. In acidic media, a corrosion inhibitor, benzotriazole(BTA) and tolytriazol(TTA) was used to control the removal rate and avoid isotropic etching. When complexing agent is added with $H_2O_2$ 2wt% in the slurry, a corrosion rate was presented very good. Most of in, it was appeared that BTA is possible to be replaced by TTA. The tartaric acid was distinguished for the effect among complexing agents. n we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.53-57
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• 2009

Recovery of heavy-metallic component from a waste solution of factory was undertaken by the solar cell electricity. The solution was obtained from an electrolytic etching process of 316L stainless steel. The electrolysis of the solution for recovery of heavy metallic components was made with platinum plated titanium mesh anode and copper plate cathode. Analysis for the solution and electro-winned materials were made by EDS, XRD and SEM. Iron, chromium, and sulfur components were recovered on the cathode from the solution. Result of EDS analysis for the electro-winned materials revealed that some metal oxide were contained in the recovered material. The recovered materials were expected to have metallic form only by the electrolysis, but metal compounds were contained because of weak solar cell power. Nickel and manganese component in the solution doesn't recovered by this electrolysis process, but they made a sludge with phosphoric acid in the solution.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.622-629
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• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.29-35
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• 2020

In this study, five different specimen preparation methods were introduced and their advantages and disadvantages were presented. One of them, an epoxy mounting method has advantages of constant exposure area, ease of surface preparation without touching the specimen surface during polishing or cleaning, use of small amount of material and ease of specimen reuse by polishing or etching. However, in order to eliminate unexpected errors resulting from preferable reaction at the specimen/epoxy interface and contact resistance between the specimen and copper conducting line for electrical connection, it is recommended to cover the wall side of the specimen with porous anodic oxide films and to remain the contact resistance lower than 1 ohm. The increased contact resistance between the specimen and Cu conducting line appeared to result in increases of anodizing voltage and solution temperature during anodizing by which thickness and hardness of anodizing film on Al2024 alloy were drastically decreased and color of the films became more brightened.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.9
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• pp.1-5
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• 2013

We developed high-efficient 6W-LED package with simple structure by applying Heat Slug and silicone-reflector. LED package was manufactured in $8.5{\times}8.5mm$ sized multi-chip structure having thickness of $500{\mu}m$ achieved by bonding silicon-reflector with prepreg on top of the plate after implementing the reflector placed on copper substrate Half Etching by thickness of $200{\mu}m$. The luminous flux, luminous efficacy, correlated color temperature, color rendering index and thermal resistance of developed LED was evaluated, and it verified the application of products by applying it to 120W-LED road luminaires through simulation. The luminous efficacy of LED package reached over 130lm/W, and it is possible to be manufactured into 120W-LED road luminaires using 18 packages. In addition, the simulation results showed average of horizontal illuminance and overall illuminance uniformity that is suitable for three-lane road.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.227-230
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• 2004

As the organic acids were added in the slurry, zeta potential of alumina was changed to negative value and IEP value was shifted from alkaline to acidic pH. In citric acid based slurry, Cu surface continuously dissolved and etching depth linearly increased. On the contrary, passivation layer was grown on Cu surface in oxalic acid based slurry. As the platen rotation speed increased, Preston coefficient decreased in both slurries. With oxalic acid based slurry, at low velocity, removal rate is high value because of high friction force compared to citric acid based slurry. As platen velocity increased, removal of Cu in citric acid based slurry became higher value than oxalic acid based slurry. Typical lubrication behaviors were observed in both slurries. As Sommerfeld number increased, COF values gradually decreased and then re-increased. It indicated that lubrication was changed to direct contact or semi-direct contact mode to hydro-lubrication mode.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.