• 한국재료학회지
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• 제14권3호
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• 한국광학회지
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• 제3권1호
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• pp.50-54
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• 1992

마스크를 사용하지 않고 레이저 $(CW Ar^+$ laser, $\lambda=514.5nm)$ 광속을 이용하여 불산 용액이 첨가된 황산구리 전해질 용액내의 실리콘(Si, 100) 단결정 표면에 구리를 침착시켰으며, 이들 사이에서 일어나는 화학 반응식을 도금에서와 같이 양극 반응과 음극 반응으로 구분 하여 제안하였다. 또한 침착 되는 구리점의 직경을 전해질 용액에 첨가되는 불산용액의 양, 레이저 광속의 조사 시간과 관속의 세기에 따라 측정 분석하였다. p형 실리콘 단결정의 경우, 연속형 $Ar^+$ 레이저를 조사하였을때 구리 침착이 일어나고 펄스형 레이저 광속(Nd:YAG 레이저에 KDP결정을 사용하여 얻은 2차 고조파, $\lambda=530nm, $\tau=25nsce$)을 조사하였을 경우에는 침착이 일어나지 않았다. 그와는 반대로 n형 실리콘 단결정의 경우, 연속형 $Ar^+$ 레이저를 조사하였을 때는 구리 침착이 일어나지 않았으나, 펄스형 레이저 광속을 조사시켰을 경우에는 구리 침착이 일어남을 관찰하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.194.1-194.1
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• 2016

The present study investigated the effect of zincate treatment time on the dissolution behavior and the deposition of copper by immersion process and electroplating process on AZ31 Mg alloy substrate in a copper pyrophosphate bath. Without zincate pretreatment, the AZ31 Mg substrate quickly dissolved in the copper pyrophosphate solution although an external cathodic current was applied. The copper layers deposited on non-zincate treated AZ31 Mg alloy substrate by both immersion and electroplating processes showed very porous structure and very poor adhesion. With increasing zincate treatment time up to 2 min, the dissolution of AZ31 substrate in pyrophosphate solution rapidly decreased and the deposited copper layer was less porous and exhibited stronger adhesion. The immersion of AZ31 Mg sample in zincate solution for 5 min was found as a critical time for producing a non-porous and adherent electrodeposited copper layer on AZ31 Mg alloy. The optimum zincating time can be determined by observing the open circuit potential (OCP) of AZ31 Mg alloy samples in a copper pyrophosphate electroplating bath. The OCP reached a stable value of about -0.10 V (vs. SCE) after 5 min of immersion in the copper pyrophosphate electroplating solution.

• 한국재료학회지
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• 제13권3호
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• 한국융합학회논문지
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• 제7권6호
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• pp.193-198
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• 2016

전기 도금한 도금 층의 집합조직은 전해조건에 의해 변화하는 것으로 알려져 있다. 도금층의 집합조직은 도금층의 미세조직과 표면 형상과 관계가 있으며 도금층의 기계적인 성질에 영향을 미친다. 그러므로 도금층의 집합조직의 변화양상의 이해는 매우 중요하다. 또한 전기도금 층은 열처리 됐을 때 재결정이 일어난다. 그 재결정 집합조직은 도금 층의 초기 성장 집합조직과 다르게 된다. 전기 도금한 도금 층의 그 미세조직, 표면 형상, 집합조직과 기계적인 성질은 용액조성, 과전압, pH, 전류밀도와 용액온도 등의 전해조건에 의해 변화한다. (111)과 (110)집합조직을 갖는 구리도금 층을 융합연구를 통해 황산 욕으로부터 얻을 수 있었다. 이 연구에서는 (110) 또는 (111)집합조직을 갖는 구리도금 층을 황산 욕에서 얻고, 그 (110) 또는 (111)집합조직으로의 변화와 기계적 성질을 설명할 수 있는 모델을 제시하였다.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.459-466
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• 2000

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

• 한국환경과학회지
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• 제11권5호
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• pp.445-454
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• 2002

Material exposure experiments were performed to evaluate the relationship between air pollution and material corrosion rates based on collaboration with researchers in China, Japan, and Korea. Qualitative and quantitative atmospheric corrosion was estimated from damage caused to bronze, copper, steel, marble, cedar, cypress, and lacquer plates exposed to outdoor and indoor conditions in certain East Asian cities. The effects of atmospheric and meteorological factors on the damage to the copper plates and marble pieces were estimated using a regression analysis. The results indicated that sulfur dioxide produced the most destruction of the materials, especially in South Korea and China. In Japan, the copper plates were damaged as a result of natural conditions and sea salt. Copper was also found to be damaged by the surface deposition of sulfur and chlorine. Meanwhile, marble was substantially degraded by gaseous sulfur dioxide, yet sulfate ions in rain had no effect. Accordingly, the analysis of air pollution from the perspective of material damage was determined to be very useful in evaluating and substantiating the intensity of air pollution in East Asia.

• 한국표면공학회지
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• 제24권3호
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• pp.125-136
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• 1991

a mathematical model is presented to describe the current distribution on a rotaing disk electrode under the galvanostatic pulse conlitions. A numerical technique by finite difference method to the transient convective diffusion equation, coordinate transformation and separation of variables to Laplace equation, and an iterative algorithm to solve the above equations simtltaneously with approximate boundary conditions were developed. An experimental investigated based on copper deposition in a copper sulfate-sulfuric acid system was performed and satisfactory agreement was obtained between expermental and theoretical current distribution. The current distribution of copper deposition is secondary current distribution within the experimental conditions. Dimensionless variables, N and J as well as Wagner number were used to determine the criteria for the uniformity of current distribution.