• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.134-134
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• 2016

The effect of different thermal treatments on the sub-50 nm copper nanoparticles is examined in the aspects of chemical, electrical and surface morphology. The copper nanoparticles are chemically synthesized and fabricated for paste-type solution. Simple bar coating method is practiced as a deposition process to form copper thin film on a typical slide glass. Deposited copper thin films are annealed by two different routes: general tube furnace with 99.99 % Ar atmosphere and selective laser sintering process. The thermal behavior of the different thermal-treated copper thin films is compared by SEM, XRD, FT-IR and XPS analysis. In this study, the laser sintering process ensures low annealing temperature, fast working speed and ambient-accessible route. Moreover, the laser-sintered copper thin film shows good electrical property and enhanced chemical stability than conventional thermal annealing process. Consequently, the proposed laser sintering process can be compatible with plastic substrate for flexible applications.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.1
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.352-356
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• 2023

The integration of bioelectronic devices with the skin is a promising strategy for personalized healthcare monitoring and diagnostics. On-skin bioelectrodes hold great potential for the real-time tracking of physiological parameters. However, persistent challenges of stability and reliability have instigated exploration beyond conventional noble metals. This study focuses on the ionic passivation and oxidation dynamics of copper-based on-skin thin-film bioelectrodes. Through parylene chemical vapor deposition, we harness a controlled thin film of parylene insulation to counter the intrinsic susceptibility of copper to oxidation in the ionic environment. The results represent the relationship among the parylene insulation thickness, copper oxidation, and electrode impedance over temporal intervals. Comparative analyses indicate that the short-term stability of the copper electrode is comparable to that of the gold electrode. Therefore, we propose a cost-effective strategy for fabricating copper-based on-skin bioelectrodes by introducing enhanced ionic stability within a discernible operational timeframe. This study enriches our understanding of on-skin bioelectronics and affordable material choices for practical use in wearable healthcare devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.160-162
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• 2009

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.179-182
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• 1995

The NO$_2$gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett(LB) films of Copper-tetra-tert-butylphthalocyanine(CuTBP). The optimum conditions for a film deposition were obtained through a study of $\pi$-A isotherms, and the deposited film status was confirmed by the ellipsometry measurements. It was found that at room temperature there are increments of electrical conductivities by 40 times, 25 seconds of response time and 40 seconds of response time when the films were exposed to the 200ppm NO$_2$gases. We hale observed an increase of the electrical conductivities as the density of NO2 gas increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.434-434
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• 2011

Electrochemical method have been employed in this work to modify the chemical vapour deposited nitrogen doped hydrogen amorphous diamond-like carbon (N-DLC) film to fabricate nickel and copper nano particle modified N-DLC electrodes. The electrochemical behaviour of the metal nano particle modified N-DLC electrodes have been characterized at the presence of glucose in electrolyte. Meanwhile, the N-DLC film structure and the morphology of metal nano particles on the N-DLC surface have been investigated using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. The nickel nano particle modified N-DLC electrode exhibits a high catalytic activity and low background current, while the advantage of copper modified N-DLC electrode is drawn back by copper oxidizations at anodic potentials. The results show that metal nano particle modification of N-DLC surface could be a promising method for controlling the electrochemical properties of N-DLC electrodes.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.