• 제목/요약/키워드: Conversion layer

검색결과 713건 처리시간 0.034초

8비트 데이타 정밀도를 가지는 다층퍼셉트론의 역전파 학습 알고리즘 (Learning of multi-layer perceptrons with 8-bit data precision)

  • 오상훈;송윤선
    • 전자공학회논문지B
    • /
    • 제33B권4호
    • /
    • pp.209-216
    • /
    • 1996
  • In this paper, we propose a learning method of multi-layer perceptrons (MLPs) with 8-bit data precision. The suggested method uses the cross-entropy cost function to remove the slope term of error signal in output layer. To decrease the possibility of overflows, we use 16-bit weighted sum results into the 8-bit data with appropriate range. In the forwared propagation, the range for bit-conversion is determined using the saturation property of sigmoid function. In the backwared propagation, the range for bit-conversion is derived using the probability density function of back-propagated signal. In a simulation study to classify hadwritten digits in the CEDAR database, our method shows similar generalization performance to the error back-propagation learning with 16-bit precision.

  • PDF

삼결정 실리콘 태양전지의 19%변환 효율 최적요건 고찰에 관한 연구 (The study of High-efficiency method usign Tri-crystalline Silicon solar cells)

  • 이욱재;박성현;고재경;김경해;이준신
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
    • /
    • pp.318-321
    • /
    • 2002
  • This paper presents a proper condition to achieve high conversion efficiency using PC1D simulator on sri-crystalline Si solar cells. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 $\mu\textrm{m}$, front surface recombination velocity 100 cm/s, sheet resistivity of emitter layer 100 Ω/$\square$, BSF thickness 5 $\mu\textrm{m}$, doping concentration 5${\times}$10$\^$19/ cm$\^$-3/. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %.

  • PDF

The influence of glycerol doped PEDOT: PSS and Ag buffer layer on power conversion efficiency of semitransparent organic photovoltaic devices

  • Na, Hyung-Il;Kim, Yong-Hoon;Oh, Min-Soek;Han, Jeong-In;Ju, Byeong-Kwon;Park, Sung-Kyu
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.1557-1559
    • /
    • 2009
  • By using optimum doping ratio (10 ~ 20 wt%) of glycerol, the power conversion efficiency (PCE) of organic photovoltaic devices based on poly (3-hexylthiophene) and phenyl-$C_{61}$-butyric acid methyl ester was dramatically increased from 3.23% to 5.03%. Finally, semitransparent organic photovoltaic devices including glycerol doped poly (3,4-ethylenedioxy-thiophene):poly (styrene sulfonate) and thin Ag (< 1 nm) buffer layer typically have shown PCE > 3% with transmittance > 30% in visible ranges.

  • PDF

Preparation and Reaction Studies of $Pt/Al_2O_3$ Model Catalysts

  • Kim, Chang-Min;Gabor A. Somorjai
    • 한국진공학회지
    • /
    • 제3권4호
    • /
    • pp.414-419
    • /
    • 1994
  • 알루미늄 박편 위에 Pt/$Al_2O_3$ 모델 촉매를 만들었다. 알루미늄 표면을 $10 ^5Torr$의 산소 압력 하에서 산화시킨후 plasma evaporation source를 사용하여 Pt을 증착시켰다. 이 모델 촉매 표면에서 일 어나는 1-butene 의 반응을 연구하였다. 산화알루미늄 표면에서는 이성질화 반응이 일어 났으나 Pt을 증착시킨 산화알루미늄 표면에서는 수소첨가반응이 일어남이 관찰되었다. 알루미나 표면의 Pt이 증가함 에 따라 수소첨가반응으로서 선택성이 증가되었다.

  • PDF

A Circularly Polarized Waveguide Narrow-wall Slot Array using a Single Layer Polarization Converter

  • Kim, Dong-Chul;Min, Kyeong-Sik
    • 한국정보통신학회논문지
    • /
    • 제4권1호
    • /
    • pp.59-65
    • /
    • 2000
  • This paper describes the characteristics of a one dimensional narrow-wall slotted waveguide array with a single-layer linear-to-circular polarization converter consisting of a dipole array. An external boundary value Problem of one slot and three dipoles, which approximates the mutual coupling between the dipole array and an edge slot extending over three faces of a rectangular waveguide, is formulated and analyzed by the method of moments; design of polarization conversion is conducted for this model as a unit element. If every unit element has perfect circular polarization, grating lobes appear in the array pattern due to the alternating slot angle: these are suppressed in this paper by changing the dipole angle and degrading the axial ratio of the unit element. The validity of the design is confirmed by the measurements. The dipole array has negligible effects upon slot impedance; the polarization conversion for existing narrow-wall slotted arrays is realized by add-on dipole array.

  • PDF

Improvement of hole transport from p-Si with interfacial layers for silicon solar cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.239.2-239.2
    • /
    • 2016
  • Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

  • PDF

염료감응형 태양전지의 광전변환효율 향상을 위한 무반사 박막 (Anti-Reflection Thin Film For Photoelectric Conversion Efficiency Enhanced of Dye-Sensitized Solar Cells)

  • 정행윤;기현철;홍경진
    • 한국전기전자재료학회논문지
    • /
    • 제29권12호
    • /
    • pp.814-818
    • /
    • 2016
  • DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

차단막 형성과 전해질의 최적화에 의한 광전변환 효율 개선 연구 (Study of Enhanced Photovoltaic Performance with Optimized Electrolytes and Blocking Layer Formation)

  • 박희대;주봉현;성열문
    • 조명전기설비학회논문지
    • /
    • 제27권3호
    • /
    • pp.50-54
    • /
    • 2013
  • In this work, the effects of blocking layer and optimally fabricated electrolyte were investigated with respect to impedance and conversion efficiency of the cells.A layer of $TiO_2$ less than ~200nm in thickness, as a blocking layer, was deposited by rf sputtering onto the F:$SnO_2$ (FTO) glass to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). Also, optimum condition of electrolytes preparation for DSCs was investigated. 3-methoxyppropionitrie and redox pairs with LiI and $I_2$ were used as solvents for fabrication of electrolyte. The electrochemical impedances of DSCs using this photo-anode were $R_1$: 13.8, $R_2$: 15.1, $R_3$: 11.9 and $R_h$: $8.3{\Omega}$, respectively. The $R_2$ impedance related by electron transportation from porous $TiO_2$ to FTO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 6.4% and approximately 1.3% higher than general one.

Monolithic SiGe Up-/Down-Conversion Mixers with Active Baluns

  • Lee, Sang-Heung;Lee, Seung-Yun;Bae, Hyun-Cheol;Lee, Ja-Yol;Kim, Sang-Hoon;Kim, Bo-Woo;Kang, Jin-Yeong
    • ETRI Journal
    • /
    • 제27권5호
    • /
    • pp.569-578
    • /
    • 2005
  • The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

  • PDF

크롬 프리 세륨 용액에 의한 AZ31 마그네슘 합금의 화성 피막에 대한 특성 평가 (Characteristics of Conversion Coating of AZ31 Magnesium Alloy Formed in Chromium-Free Cerium-Based Solution)

  • 김명환;이동욱;곽삼탁;문명준
    • 한국표면공학회지
    • /
    • 제49권1호
    • /
    • pp.62-68
    • /
    • 2016
  • A chromium-free Ce-based conversion coating formed by immersion in a solution containing cerium chloride and nitric acid on AZ31 magnesium alloy has been studied. The effects of acid pickling on the morphology and the corrosion resistance of the cerium conversion coating were investigated. The corrosion resistance of the conversion coating prepared on AZ31 Mg alloy after organic acid pickling was better than that of inorganic acid pickling. The morphology of the conversion-coated layer was observed using optical microscope and SEM. Results show that the conversion coatings are relatively uniform and continuous, with thickness 1.0 to $1.1{\mu}m$. The main elements of the conversion coating of AZ31 Mg alloy are Mg, O, Al, Ce and Zn by EDS analysis. The electrochemical polarization results showed that the Ce-based conversion coating could reduce the corrosion activity of the AZ31 Mg alloy substrates in the presence of chloride ions.