• Journal of Mechanical Science and Technology
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• v.19 no.4
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• pp.958-967
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• 2005

The mathematical model for tension behaviors of a moving web by Shin (2000) is extended to the tension model considering the thermal strain due to temperature variation in furnace. The extended model includes the terms that take into account the effect of the change of the Young's Modulus, the thermal coefficient, and the thermal strain on the variation of strip tension. Computer simulation study proved that the extended tension model could be used to analyze tension behaviors even when the strip goes through temperature variation. By using the extended tension model, a new tension control method is suggested in this paper. The key factors of suggested tension control method include that the thermal strain of strip could be compensated by using the velocity adjustment of the helper-rollers. The computer simulation was carried out to confirm the performance of the suggested tension control method. Simulation results show that the suggested tension control logic not only overcomes the problem of the traditional tension control logic, but also improves the performance of tension control in a furnace of the CAL (Continuous Annealing Line).

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.58.1-58.1
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• 2012

Direct write technologies provide flexible and economic means to manufacture low-cost large-area electronics. In this regard inkjet printing has frequently been used for the fabrication of electronic devices. Full advantage of this method, which is capable of reliable direct patterning with line and space dimensions in the 10 to 100 um regime, is only made with all-solution based processing. Among these printable electronic materials, silver and copper nanoparticles have been used as interconnecting materials. Specially, solutions of organic-encapsulated silver and copper nanoparticles may be printed and subsequently annealed to form low-resistance conductor patterns. In this talk, we describe novel processes for forming silver nanoplates and copper ion complex which have unique properties, and discuss the optimization of the printing/annealing processes to demonstrate plastic-compatible low-resistance conductors. By optimizing both the interconnecting materials and the surface treatments of substrate, it is possible to produce particles that anneal at low-temperatures (< $200^{\circ}C$) to form continuous films having low resistivity and appropriate work function for formation of rectifying contacts.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.