• 정보저장시스템학회논문집
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• 제10권2호
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.101.3-101.3
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• 2010

Glass frit은 실리콘 태양전지의 Ag/Si contact을 위해 필수적이다. 태양전지의 고효율 특성 구현 때문에, Contact resistance(Rc)가 우수한 Pb-frit의 사용이 불가피한 상황이다. 본 연구는 기존의 Pb계를 무연화함과 동시에 동등수준의 효율을 목표로 하였다. Ag 분말 size 및 glass frit의 열적 거동 특성이 SiNx 코팅층 침투와 Ag re-crystallites에 미치는 영향에 대해 평가하였다. 6 inch 다결정 실리콘 웨이퍼를 사용하였으며, softening temperture(Sp)별로 4종의 Bi계 glass frit을 제조 하였고, 분말 size가 다른 3종의 Ag powder를 선정하였다. Glass frit Sp가 $460^{\circ}C$ 이상의 경우에는 효율이 10% 미만이였으나 Sp $460^{\circ}C$ 이하에서는 16% 수준의 효율을 확인할 수 있었다.

• ETRI Journal
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• 제27권4호
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• pp.433-438
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• 2005

We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of $5 {\mu}m$, and a width of $50{\mu}$ and a length of $800 {\mu}m$. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was $170 {\mu}m$, and an annealing process was performed for 20 min at $500^{\circ}C$. The contact resistance of the newly fabricated probe card was less than $2{\Omega}$, and its lifetime was more than 20,000 turns.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• 마이크로전자및패키징학회지
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• 제10권4호
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• pp.29-33
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• 2003

n-형 탄화규소 반도체에 대한 구리금속을 이용하여 오옴성 접촉 구조를 제작하였다. 제작된 구리접촉에 대해 후속열처리 조건과 금속접촉 구조에 따른 재료적, 전기적 성질의 변화를 조사하였다. 금속접촉의 오옴성 성질은 금속박막의 구조 뿐 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2단계 열처리방식을 통하여 시행하였다. 접촉비저항의 측정을 위해 TLM 구조를 만들었으며 면저항 ($R_{s}$), 접합저항 ($R_{c}$), 이동거리 ($L_{T}$), 패드간거리 (d), 전체저항 ($R_{T}$) 값을 구하여 알려진 계산식에 의해 접촉비저항 ($p_{c}$) 값을 추정하였다. 진공보다 환원분위기에서 후속 열처리를 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다. 가장 양호한 결과는 Cu/Si/Cu 구조를 가진 금속접촉 결과이었으며 접촉비저항 ($p_{c}$)은 $1.2\times 10^{-6} \Omega \textrm{cm}^2$의 낮은 값을 얻을 수 있었다. 재료적 성질은 XRD를 이용하여 분석하였고 SiC 계면 상에 구리와 실리콘이 결합한 구리 실리사이드가 형성됨을 알 수 있었다.

• 전자공학회논문지A
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• 제31A권10호
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• pp.87-93
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• 1994

Ohmic contacts between Au and p-HgHg_{0.7}Cd_{0.3}Te$ with low specific contact resistance have been obtained. The contact region of the wafer is first pre-heated for 5 seconds in a rapid thermal processing equipment. The temperature reaches a maximum value of about 200$^{\circ}C$ at the end of the 5 seconds. Next, a thin Au film is formed on the contact region by immersing the sample in AuCl$_{3}$ solution. the sample is then post-annealed in the same condition as the pre-heating after Pb/In pad metals are deposited on the electroless Au contacts. The specific contact resistance measured by transmission line model is 5${\times}10^{-3}{\Omega}cm^{2}$ at 80K. RBS and differential Hall measurement data suggest that the above low resistance ohmic contact is ascribed to surface traps and increased gold diffusion rate.

• 수산해양기술연구
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• 제51권2호
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• pp.163-170
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• 2015

Recently LED fish-attracting lamps have been more widely used in fisheries as low-cost and high-efficiency fishing gear, and development of long-life high-efficiency lamps is required through the design of LED packages to optimize heat resistance. This study developed an improved LED fish-attracting lamp with excellent heat performance, which was verified using a numerical model. Heat-resistance design factors such as the heat-radiation fin shape, PCB type, and LED chip count were investigated and optimized. Comparison with a commercial 180-W LED fishing lamp showed that the increase in initial temperature was 40% higher than that of the surrounding LED chip because of design errors in contact thermal resistance. The 250-W LED lamp developed in this study has a characteristic with thermal rising in linearly stable according to the heat source. In addition, luminance efficiency was improved by 20-65% by using flow-visualization simulation. A decrease of 45% in total power consumption with a fuel-cost reduction of over 55% can be expected when using these optimized heat release design factors.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.3-8
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• 1996

To enhance the cutting performance of the tool, single or multilayer coating is applied on the substrate of the tool. Coating material reduces cutting force and heat generation in tool-chip contact zone and enhances resistance against abrasive wear. This paper presents that the effect of different coatings on abrasive wear resistance varies with work material and the flank wear rate is different with depth of cut. Crater wear rate is also found to decrease with higher thermal diffusivity of coating material. It is verified that the estimated thermal diffusivity of multilayer coating has consistent effect on the crater wear.

• 대한기계학회논문집B
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• 제23권7호
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• pp.820-830
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• 1999

The coupled turbulent flow and solidification is considered in a typical slab continuous easting process using commercial program FIDAP. Standard $k-{\varepsilon}$ turbulence model is modified to decay turbulent viscosity in the mushy zone and laminar viscosity is set to a sufficiently large value at the solid region. This coupled turbulent flow and solidification model also contains thermal contact resistance due to the mold powder and air gap between the strand and mold using an effective thermal conductivity. From the computed flow pattern, the trajectory of inclusion particles was calculated. The comparison between the predicted and experimental solidified shell thickness shows a good agreement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.