• 한국산학기술학회논문지
• /
• 제11권11호
• /
• pp.4121-4128
• /
• 2010

프로브 카드는 웨이퍼의 칩 검사에 사용된다. 또한 반도체의 고집적화에 따른 미세피치 대응으로 높은 위치 정도가 요구된다. 그러나 실제 장비에서는 하부 척에서 높은 열이 프로브 카드로 전달되어, 프로브 카드의 열변형을 초래하게 된다. 프로브 카드의 수직방향 열변형은 핀의 접촉관련 문제를 야기할 것이고, 수평방향의 열변형은 x-y 방향으로의 위치 오차를 만들 것이다. 따라서 프로브 카드는 허용 범위내의 열변형이 이루어지도록 재질과 구조를 갖게 설계되어야 한다. 본 연구에서는 유한요소 해석프로그램인 ANSYS$^{TM}$를 이용하여 프로브 카드의 실제 부하 조건들을 적용한 열전달 해석을 수행하였다. 정상상태 온도 구배에 대해 열변형이 계산되었으며, 최종적으로 적절한 설계변수들을 조정하여 열변형이 최소화 될 수 있는 새로운 구조를 제안하였다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 추계학술발표회초록집
• /
• pp.118-118
• /
• 2003

In a rolling wire probe, a key component of an inspection apparatus for PDP electrode patterns, the electric performance of it is known to be strongly dependent on the surface condition of a collet pin, a needle pin, and a wire. However, the collet and needle pins rotate very rapidly in contact with each other, which results in the degradation of the surface by the heat and friction and finally the formation of black wear marks on the surface after a several hundred hours test. Once the black wear marks appear on the surface, the electric resistance of the probe increases sharply and so the integrity of the probe is severely damaged. In this experiment, TiN coating, which has excellent electric conductances and good wear-resistance, has been applied on the surface of collect and needle pins for preventing the surface damages. In order to achieve the homogeneous coating with a good adhesion property, special coating substrate stages and jigs were designed and applied during coating. TiN has been deposited using 99.999% Titanium target by a DC reactive sputtering method. According to the components and jigs, processing parameters, such as DC power, RF bias and the flow rate ratio of Ar and N$_2$ used as reactive gases, has been controlled to obtain good TiN films. Detailed problems and solutions for applying the new substrate stages and jigs will be discussed.

• 한국재료학회지
• /
• 제20권6호
• /
• pp.338-343
• /
• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.234-239
• /
• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• 대한화학회지
• /
• 제61권1호
• /
• pp.12-15
• /
• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• 접착 및 계면
• /
• 제14권3호
• /
• pp.117-120
• /
• 2013

섬유 프리프레그(prepreg)는 복합재료를 제조하기 위한 중간성형재료이다. 아라미드섬유직물에 범용 페놀수지와 polyvinyl butyral (PVB) 변성 페놀수지를 각각 40 wt%씩 도포하고, 열처리를 통해 B-stage 상태의 섬유 프리프레그를 제조하였다. 섬유 프리프레그의 표면형상을 주사전자현미경을 이용하여 관찰하였다. 프리프레그의 tack성은 복합재료 성형 시에 매우 중요한 특성으로 본 연구에서는 시험적 요인에 따른 tack성을 보기 위하여 probe tack 시험법을 적용하였다. 시험시의 contact time, contact force, debonding rate를 변수로 두었다. 섬유 프리프레그의 tack성은 시험적 요인의 증가에 따라 비례적으로 증가하다가 임계점에서부터는 일정한 값을 가지는 것을 확인하였다. 최종적으로 debonding rate에 따른 tack성의 변화와 프리프레그 표면에서의 fibrillation과의 상관관계를 고찰하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.256-256
• /
• 2011

Using plasmas, hydrophobic surfaces are made on various substances such as polyimide films, filter paper, cotton clothes and multi-walled carbon nanotube (MWCNT) with hexamethyldisiloxane (HMDSO), trimethylchlorosilane (TMCS) and toluene reagents. Plasmas are easily and rapidly to change surface of hydrophilic materials into hydrophobic. We have also optimized processing time and maximized contact angle for super-hydrophobicity of MWCNT. Contact angles have been calculated by measuring between substance and probe liquid, and total surface free energies are determined by the Owens-Wendt equation. Figure 1 shows the measured contact angles with time and ratio of reagents on MWCNT.

• Tribology and Lubricants
• /
• 제25권2호
• /
• pp.81-85
• /
• 2009

Interests in micro/nano-particles have been greatly increasing due to their wide applications in various fields such as environmental and medical sciences as well as engineering. In order to obtain a fundamental understanding of the tribological characteristics at particle-surface contact interface, frictional behaviors according to load/pressure and materials were obtained by using atomic force microscope(AFM) cantilevers with different stiffnesses and tips. Lateral contact stiffnesses were observed in various tip-surface contact situations. Experimental results show that stick-slip friction behavior occurs even when the colloidal probes with a particle of a few micrometers in diameter, which have a relatively large contact area and lack a well-shaped apex, were used. This indicates that atomic stick-slip friction may be a more common phenomenon than it is currently thought to be. Also, experimental results were investigated by considering the competition between the stiffness of the interatomic potential across the interface and the elastic stiffnesses of the contacting materials and the force sensor itself.

• 한국전기전자재료학회논문지
• /
• 제23권4호
• /
• pp.298-302
• /
• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• 한국전기전자재료학회논문지
• /
• 제23권7호
• /
• pp.571-574
• /
• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).