• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.822-828
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• 2002

Fabrication and electrical characterization of R. F. High-power unit capacitors were investigated to study on condition of fabrication processing for R. F. High-power unit capacitor and electrical characteristics according to addition of $ZrO_2$. The unit capacitors were fabricated using tape casting. The optimum mixture ratio of dielectrics and mixing binder for the slurry fabrication was 57.5∼60.0: 42.5∼40.0 wt%. The slurry viscosity was 4000∼5000 cps and casting state of green tape fabricated using these slurry was excellent. Optimum stacking was made by 200 kg/$cm^2$ pressure with 80$^{\circ}C$ heating. $ZrO_2$ was added to improve the electrical characteristics of unit capacitor, especially breakdown characteristics. The dielectric constant and loss factor of the unit condenser having different $ZrO_2$ amounts was not changed in the addition range of 1 to 5 wt%. Also, dielectric constant was not changed in the frequency range of 10 to 500 kHz. It was found that characteristics of resistance voltage was improved through the formation of $CaZrO_3$ and the reduction of particle size as about 3wt% $ZrO_2$ was added.

• Journal of the Korean Society of Marine Environment & Safety
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• v.22 no.7
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• pp.884-891
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• 2016

A secondary injection system in a diesel engine has benefits: it can be controlled independently without interrupting engine control, it can be adapted to various layouts for exhaust systems, and it pose no reductant dilution problems compared to post injection systems in the combustion chamber or other supplemental reductant injections. In a secondary injection system, the efficiency of the catalyst depends on the method of reducing the supply. The reductant needs to be maintained and optimized with constant pressure, the positions and angles of injector is a very important factor. The concentration and amount of reductant can be changed by adjusting secondary injection conditions. However, secondary injection is highly dependent upon the type of injector, injection pressure, atomization, spray technology, etc. Therefore, it is necessary to establish injection conditions the spray characteristics must be well-understood, such as spray penetration, sauter mean diameter, spray angle, injection quantity, etc. Uniform distribution of the reductant corresponding to the maximum NOx reduction in the DeNOx catalyst system must also assured. With this goal in mind, the spray characteristics and impingement plate types of a secondary injector were analyzed using visualization and digital image processing techniques.

• Journal of the Mineralogical Society of Korea
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• v.3 no.1
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• pp.1-6
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• 1990

Clacic amphiboles along the tremolite (Tr)-tschermakite(Ts) joint were synthesized using a piston-cylinder appratus. At 750-85$0^{\circ}C$and 12-2 kb, amphibole+corundum coexist with zoisite($\pm$talc, chlorite, and Mg-staurolite), but with anorthite($\pm$cholorite, spinel, pyroxenes, and sapphirine) at lower P. At 90$0^{\circ}C$, amphibole+corundum+clinopyroxene($\pm$anorthite, forsterite, sapphirine, and garnet) are stable over the P range 12-18 kb. These amphibole-bearing assemblages are replaced at high P by clcinopyroxene+talc+chlorite+zoisite at 650-75$0^{\circ}C$, and at higher temperatures by garnet+clinopyroxene($\pm$zoisite, orthopyroxene, and Mg-staurolite). Synthetic amphiboles with Ts>~45 mol% contain as much as 0.15 excess cations per formula unit(pfu) based on 23 oxygens(anhydrous formula), whereas less tschermakitic ones are deficient in cation occupancy by up to 0.18 pfu. This trend is attributed to the 야/trioctahedral substitution in Ca-amphiboles. Compositions of synthetic amphiboles display systematic changes with P and T governed by coexisting mineral assemblages. The Ts content (=[8-Si-Na]/2) increases with increasing T( Ts/ T=~0.1 nik% K-1) in the range 750-85$0^{\circ}C$, but remains nearly constant at 850-90$0^{\circ}C$. Pressure dramatically affects the Ts content of Ca-amphiboles:it increases with P at 8-12 kb( Ts/ T=2-3 mol% K-1), but significantly decreases at 12-21 kb( Ts/ P=-2.5 mol% Kb-1). Hence, the most tschermakitic amphiboles, containing 60$\pm$5 mol % Ts, or 1.2$\pm$0.1 tetrahedral Al, occur at 12 kb and 850-90$0^{\circ}C$. Compositions of Ca-amphiboles defined by a simple reaction, 3 Tr+2 zoisite+7 corundum+H2O=5 Ts, are reversed and used to estimate thermodynamic parameters of tschermakite assuming ideal mixing of Tr-Ts solid solutions. Predicted standard molal entropy and enthalpy of tschermakite are : S$^{\circ}$of Tr-Ts solid solutions. Predicted standard molal entropy and enthalpy of tschermakite are : S$^{\circ}$=566.9$\pm$13.7 J mol-1K, -1and H$^{\circ}$=-12518.36$\pm$15.17 kJ mol.-1

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean GEO-environmental Society
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• v.12 no.5
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• pp.59-63
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• 2011

Ground dynamic parameter such as shear elastic modulus and damping ratio is a very important variable in design of ground-structure with repeated load and dynamic load. Shear elastic modulus and damping ratio on small strain below linear limit strain is constant regardless of strain. Shear elastic modulus as the maximum shear elastic modulus and damping ratio as the minimum damping ratio were considered. As a lot of experiment related to the maximum shear elastic modulus, which is in dynamic deformation characteristics, have been conducted, many factors including voiding ratio, over consolidation ratio(OCR), confining pressure, geology time, PI, and the number of load cycle affect to dynamic soil characteristic. However, the research of ground dynamic characteristic improved with grout is absent such as underground continuous wall construction, deep mixing method, umbrella arch method. In order to investigate the dynamic soil characteristics improved with grout, in this study, resonant column tests were performed with changing water content(20%, 25%, 30%) and injection ratio of grout(5%, 10%, 15%), cure time(7th day, 28th day) As a result, shear elastic modulus and damping ratio, which are ground dynamic parameter, are affected by the injection ratio of milk grout, cure time and water content.