• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of the Korean earth science society
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• v.35 no.1
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• pp.29-40
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• 2014

A DC resistivity survey was performed to detect anomalies beneath concrete pavement. A set of high conductive media and planar electrodes were used to lessen the effect's a high contact resistance of concrete. Results of the resistivity survey were analyzed and compared with those of other geophysical surveys such as Ground Penetration Radar (GPR), Impulse Response (IR), and Multi-channel Analysis of Surface Waves (MASW), which were carried out in the same location. The results of resistivity survey showed a high resistive distribution in the section of sink and pavement where a pattern of reinforcement was observed through the GPR survey. Also, a comparison of results between the IR and resistivity surveys indicated that the high resistivity was produced by the high dynamic stiffness in the reinforced section. The co-Kriging of both the results of DC resistivity and MASW surveys at the same location showed that an integrated geostatistical analysis is able to give more accurate description on the anomalous subsurface region than can a separate analysis of each geophysical approach. This study suggests that the integrated geostatistical approaches were used for a decision-making process based on the geophysical surveys.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Economic and Environmental Geology
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• v.35 no.3
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• pp.203-210
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• 2002

In order to elucidate the growth mechanism of sulfide chimney formed as a result of seafloor hydrothermal mineralization, we carried out the mineralogical and fluid inclusion studies on the inactive, sulfide- and silica-rich chimney which has been recovered from a hydrothermal field in the Cleft segment of the Juan de Fuca Ridge. According to previous studies, many active and inactive vents are present in the Cleft segment. The sulfide- and silica-rich chimney is composed of amorphous silica, pyrite, sphalerite and wurtzite with minor amounts of chalcopyrite and marcasite. The interior part of the chimney is highly porous and represents a flow channel. Open spaces within chimneys are typically coated with colloform layers of amorphous silica. The FeS content of Zn-sulfides varies widely from 13.9 to 34.3 mole% with Fe-rich core and Fe-poor rims. This variation possibly reflects the change of physicochemical characteristics of hydrothermal fluids. Chemical and mineralogical compositions of the each growth zone are also varied, possibly due to a thermal gradient. Based on the microthermometric measurements of liquid-rich, two-phase inclusions in amorphous silica that was precipitated in the late stage of mineralization, minimum trapping temperatures are estimated to be about 1140 to 145$^{\circ}$C with the salinities between 3.2 and 4.8 wt.% NaCI equiv. Although the actual fluid temperatures of the vent are not available, this study suggests that the lowtemperature conditions were predominant during the mineralization in the hydrothermal field at Cleft segment. Comparing with the previously reported chimney types, the morphology, colloform texture, bulk chemistry, and a characteristic mineral assemblage (pyrite + marcasite + wurtzite + amorphous silica) of this chimney indicate that the chimney have been formed from a relatively low-temperature (<250$^{\circ}$C) hydrothermal fluid that was changed by sluggish fluid flow and conductive cooling.