• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.73-73
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• 2009

In this sutdy, a new class ACA(Anisotropic Conductive Adhesive) with low-melting-point alloy(LMPA) and self-organized interconnection method were developed. This developed self-organized interconnection method are achieved by the flow, melting, coalescence and wetting characteristics of the LMPA fillers in ACA. In order to observe self-interconnection characteristic, the QFP($14{\times}14{\times}2.7mm$ size and 1mm lead pitch) was used. Thermal characteristic of the ACA and temperature-dependant viscosity characteristics of the polymer were observed by differential scanning calorimetry(DSC) and torsional parallel rheometer, respectively. A electrical and mechanical characteristics of QFP bonding were measured using multimeter and pull tester, respectively. Wetting and coalescence characteristics of LMPA filler particles and morphology of conduction path were observed by microfocus X-ray inspection systems and cross-sectional optical microscope. As a result, the developed self-organized interconnection method has a good electrical characteristic($2.41m{\Omega}$) and bonding strength(17.19N) by metallurgical interconnection of molten solder particles in ACA.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• 정보과학회 논문지
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• 제42권12호
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• pp.1522-1534
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• 2015

본 연구에서는 미리 구축해 놓은 학습데이터 없이도 입력된 작문이 주어진 작문 주제에 적합한 내용인지 아닌지를 자동으로 판단할 수 있는 방법을 제안한다. ConceptNet은 다양한 종류의 문서에서 추출한 자연언어 문장들로부터 구축된 그래프 형태의 지식베이스이다. 본 연구에서는 작문 주제에 해당하는 작문 프롬프트(essay prompt)와 ConceptNet만을 이용하여 문서의 주제-이탈 여부를 판별하는 방법을 제안한다. ConceptNet에서 두 개념간의 최단 경로를 찾고 이에 대한 의미 유사도를 계산하는 방법을 제안한다. 이를 이용하여 작문 프롬프트와 수험생 작문 내용을 ConceptNet의 개념들로 매핑하고 이 개념들 사이의 의미 유사도를 계산하여 작문 프롬프트와 수험생 작문 사이의 주제 부합 여부를 판단한다. 8개의 작문 시험을 수행하여 얻은 수험생 작문 데이터에 대하여 평가를 수행한 결과 기존의 연구에 비해 좋은 성능을 얻을 수 있었다. ConceptNet을 활용하면 유의미한 단순 추론이 가능하기 때문에 본 연구에서 제안한 방법은 추론을 요하는 작문 문제에도 적용 가능함을 보였다.

• 한국세라믹학회지
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• 제40권11호
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• pp.1067-1072
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• 2003

Zn-Pr-Co-Cr-Dy 산화물계로 구성된 바리스터 세라믹스의 전기적 안정성을 몇 가지 DC 가속열화 스트레스 조건하에서 0.0∼2.0 mol% Dy$_2$O$_3$ 첨가량의 변화에 따라 조사하였다. 바리스터 세라믹스의 밀도는 Dy$_2$O$_3$ 첨가량이 0.5 mol%까지 증가하였으며, 보다 많이 첨가하면 감소하는 것으로 나타났다. 밀도는 전도경로와 밀접한 관계로 인해서 안정성에 큰 영향을 미치는 것으로 나타났다. Dy$_2$O$_3$ 첨가는 바리스터 세라믹스의 비직선 지수를 45 이상, 누설전류를 대략 1.0 $\mu$A 이하로 비직선성을 크게 개선시켰다. DC 스트레스 조건 0.95 V$_{1mA}$/15$0^{\circ}C$/24 h에서 안정성을 조사한 결과, 0.5 mol% 첨가시 상대적으로 가장 높은 안정성을 나타내었다. 전압-전류특성에 있어서 바리스터 전압, 비직선 지수, 누설전류의 변화율은 각각 -0.9%, -14.4%, +483.3%이었으며, 유전특성에 있어서 비유전율 및 손실계수의 변화는 각각 +7.1%, +315.4%이었다. 그 외의 바리스터 세라믹스는 낮은 밀도 때문에 열폭주 현상을 나타내는 매우 불안정한 특성을 나타내었다.다.

• 한국태양에너지학회 논문집
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• 제39권4호
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• pp.1-9
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• 2019

Modules using 6 inch cells have problems with loss due to empty space between cells. To solve this problem made by shingled structure which can generate more power by utilizing empty space by increasing the voltage level than modules made in 6inch cell. Thus, in this paper, the c-Si cutting cells were produced using nanosecond green laser, and then the ECA was sprayed and cured to perform cutting cell bonding. Three types of ECA materials (B1, B2, B3) with Ag as the main component were used, and experimental conditions varied from 5 to 120 seconds of curing time, 130 to $210^{\circ}C$ of curing temperature, and 1 to 3 of curing numbers. As a results of experiments varying curing time, B1 showed efficiency 19.88% in condition of 60 seconds, B2 showed efficiency 20.15% in 90 seconds, and B3 showed efficiency 20.27% in 60 seconds. In addition, experiments with varying curing temperature, It was confirmed highest efficiency that 20.04% in condition of $170^{\circ}C$ with B1, 20.15% in condition of $150^{\circ}C$ with B2, 20.27% in condition of $150^{\circ}C$ with B3. These are because the Ag particles are densely formed on the surface to make the conduction path. After optimizing the conditions of temperature and curing time, the secondary-tertiary curing experiments were carried out. as the structural analysis, conditions of secondary-tertiary curing showed cracks that due to damp heat aging. As a result, it was found that the ECA B3 had the highest efficiency of 20.27% in condition of 60 seconds of curing time, $150^{\circ}C$ of curing temperature, and single number of curing, and that it was suitable for the manufacture of Solar cell of shingled structure rather than ECA B1 and B2 materials.