• Title/Summary/Keyword: Conduction losses

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Development of the Power Supply with Reduced Conduction Loss and Switching Stress on the Full-Bridge DC-DC Converter (풀브리지 DC-DC 컨버터의 도전손실과 스위칭 스트레스를 저감한 전원장치 개발)

  • Ra Byung-Hun;Song Dae-Hyun;Kim Kwang-Tae;Lee Hyun-Woo
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.608-611
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    • 2001
  • This paper is indicating the problems, which are the conduction loss on the high frequency transformer, the protection of rectification diode as the snubber loss and the stress of switching main devices, as be made high current and high speed in the phase-shift switching full-bridge DC-DC converter is used the power supply's main circuit of high capacity. In this paper, to improve those problems, it is proposed that is the resonant circuit auxiliary can be reduced conduction losses and stabilized output control. And, it is constructed prototype of the power supply as the result of computer simulations.

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Application Specific IGCTs

  • Carroll Eric;Oedegrad Bjoern;Stiasny Thomas;Rossinelli Marco
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.31-35
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    • 2001
  • IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.

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A Second-Order Analysis of VM Heat Pumps (VM열펌프의 2차해석)

  • Choi, Y.S.;Jeong, E.S.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.8 no.2
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    • pp.208-218
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    • 1996
  • Performance of a VM heat pump is considerably affected by various losses, such as enthalpy dump, reheat loss, pumping loss, conduction loss and shuttle loss. A second-order analysis model of VM heat pumps, which allows consideration of the major losses, was presented. Actual heat transfer rates for heat exchangers were calculated from the heat transfer rates obtained by the adiabatic analysis and various losses. New effective temperatures of heat exchangers were calculated from the actual heat transfer rates and the mean heat transfer coefficients until there was no appreciable change in the effective temperatures. Effects of design parameters, such as phase angle, swept volume ratio, regenerator length and speed on heating capacity, cooling capacity and COP were shown.

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A Comparative Study of Operation characteristics of Active Clamp Forward Converter Based on Loss Analysis (손실해석을 통한 능동 클램프 포워드 컨버터의 동작 특성비교)

  • Oh, Deog-Jin;Kim, Hee-Jun;Kim, Chang-Sun
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.2039-2041
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    • 1998
  • In this paper, Operation characteristics of the active clamp(ACL) zero-voltage-switching(ZVS) forward converter(FC) and active clamp hard- switching(HS) forward converter are compared with respect to loss analysis. The losses of semiconductor (including conduction losses and switching losses), transformer(containing the core loss and copper loss) and parasitic element of passive element (capacitor, inductor) are measured and compared for each type. For an experiment we have built 50W ACL ZVS-FC and ACL HS-FC, in which the switching frequency is 200kHz, and test it. The experimental results show that both types of operation have nearly same characteristics.

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Transfer Characteristics of the Zero- VoltageTransition Pulse-Width - Modulation Boost Converter (Zero-Voltage-Transition Pulse-Width-Modulation Boost 컨버터의 전달 특성)

  • 김진성;박석하;김양모
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.10
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    • pp.148-156
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    • 1996
  • Increasing the switching frquency is essential to achieve the high density of switched mode power supplies, but this leads to the increase of switching losses. A number of new soft switching converters have been presented ot reduce switching losses, but most of them may have some demerits, such as the increase of voltage/current stresses and high conduction losses. To overcome these problems, the ZVT-PWM converter has recently been presented. in this paper, the operation characteristics of the ZVT-PWM boost converter is analyzed, and the steady-states (DC) and small-signal model of this converter are derived and analyzed, and then the transfer functions of this converter are derived. The transfer functions of ZVT-PWM boost converter are similar to those of the conventional PWM boost converter, but the transfer characteristics are affecsted by te duty ratio and the switching frequency.

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CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.577-595
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    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

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Loss Analyses of Soft Switching Techniques for Two-transistor Forward Converter (Two-transistor 포워드 컨버터에서 소프트 스위칭 기법의 손실 분석)

  • 김만고
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.5
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    • pp.453-459
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    • 2001
  • In this paper, the loss analyses of two soft switching techniques for two-transistor forward converter are performed. The sums of snubber conduction and capacitive turn-on losses for two transistors are calculated to compare the losses of the two techniques. While the conventional soft switching technique shows the loss difference between two transistors, the proposed soft switching technique shows equal as well as lower losses In two transistors. Thus, it can be said that even thermal distribution and higher reliability can be obtained by the proposed soft switching technique.

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Novel soft switching FB DC-DC converter for reducing conduction losses (도전손실 저감을 위한 새로운 소프트 스위칭 FB DC-DC 컨버터)

  • Kim, E.S.;Joe, K.Y.;Kye, M.H.;Kim, Y.H.;Yoon, B.D.
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.388-391
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    • 1996
  • The conventional high frequency phase-shifted full bridge DC-DC converter has a disadavantage that a circulating current flows through transformer and switching devices during the freewheeling interval Due to this circulating current, RMS current stress, conduction losses of transformer and switching devices are increased. To alleviate this problem, this study provides a novel circulating current free type high frequency soft switching phase-shifted full bridge DC-DC converter which applies the energy recovery snubber(ERS) attached at the secondary side of transformer. The ERS adopted in this study is consisted of three fast recovery diode($Ds_1$, $Ds_2$, $Ds_3$), two resonant capacitor($Cs_1$, $Cs_2$) and a small resonant inductor [(Lr) : It can be ignored because the transformer leakage inductance(Ll) is able to use in stead of inserting the resonant inductor(Lr)]

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Inductor Design Method of DCM Interleaved PFC Circuit for 6.6-kW On-board Charger

  • You, Bong-Gi;Lee, Byoung-Kuk;Kim, Dong-Hee
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2247-2255
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    • 2017
  • Because the on-board charger (OBC) is installed in electric vehicles (EVs), high power density is regarded as a key technology. Among components of the OBC, inductors occupy more than 30% of the total volume. Thus, it is important to reduce the volume and the weight of inductors while maintaining thermal stability. Discontinuous conduction mode (DCM) can satisfy these requirements; however, only a few studies have adopted the DCM operation for OBCs because of the large inductor current ripple. In this paper, a design process is proposed for application of the DCM operation to OBCs. In order to analyze the inductor losses accurately, a numerical formula for the inductor current ripple is deduced based on a detailed analysis. Two inductors are fabricated using several ferrite cores and powder cores taking into consideration the inductor size, inductor losses, and temperature rise. In order to verify the analysis and design process, experimental results are presented that show that the designed inductors satisfy the requirements of the OBCs.

High Efficiency Active Clamp Forward Converter with Synchronous Switch Controlled ZVS Operation

  • Lee Sung-Sae;Choi Seong-Wook;Moon Gun-Woo
    • Journal of Power Electronics
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    • v.6 no.2
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    • pp.131-138
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    • 2006
  • An active clamp ZVS PWM forward converter using a secondary synchronous switch control is proposed in this paper. The proposed converter is suitable for low-voltage and high-current applications. The structure of the proposed converter is the same as a conventional active clamp forward converter. However, since it controls the secondary synchronous switch to build up the primary current during a very short period of time, the ZVS operation is easily achieved without any additional conduction losses of magnetizing current in the transformer and clamp circuit. Furthermore, there are no additional circuits required for the ZVS operation of power switches. Therefore, the proposed converter can achieve high efficiency with low EMI noise, resulting from soft switching without any additional conduction losses, and shows high power dens~ty, a result of high efficiency, and requires no additional components. The operational principle and design example are presented. Experimental results demonstrate that the proposed converter can achieve an excellent ZVS performance throughout all load conditions and demonstrates significant improvement in efficiency for the 100W (5V, 20A) prototype converter.