• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.149-153
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• 2011

The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

• 한국진공학회지
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• 제10권2호
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• pp.225-233
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• 2001

Oxygen flooding을 이용한 Secondary ion Mass Spectrometry(SIMS) 분석에 있어서 표면에 산화막이 있을 때 발생하는 SIMS depth profile의 왜곡현상에 대한 원인을 분석하고 이를 보정하였다. 이러한 왜곡현상은 표면 산화막에서와 Si 매질에서의 sputter rate이 다른 데서 발생하는 깊이 보정 오류와 상대감도인자(relative sensitivity factor, RSF)가 다른 데서 발생하는 농도보정 오류로부터 발생됨이 밝혀졌다. 깊이보정 오류를 바로잡기 위하여 $N^a+$ 이온을 산화막과 Si 매질의 계면에 대한 marker로 사용하였으며 산화막 두께는 SEM 및 XPS로 측정하였다. 산화막과 Si 매질에서의 sputter rate 및 RSF의 차이는 주로 oxygen flooding이 유발한 산화막 형성시의 부피팽창에 의한 것으로 해석되었으며 이를 보정한 depth profile은 oxygen flooding없이 분석한 경우와 거의 동일한 결과를 보여주었다.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.881-888
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• 1997

This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.603-603
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• 2012

최근에 전면 emitter의 doping profile이 다른 selective emitter solar cell은 실제 제작시단파장 영역에서 많은 gain을 얻을 수 없어 LBC 구조의 태양전지에 관한 연구가 많이 진행되고 있다. 본 연구는 TCAD simulation을 이용하여 후면에 형성되는 locally doped BSF(p++) region의 doping profile의 변화에 따른 태양전지 특성에 관한 연구이다. Al으로 형성되는 local back contact의 doping depth 및 surface concentration에 따른 전기적, 광학적 분석을 통해 주도적인 인자를 분석하고 최적화하였다. 특히 doping depth에 따른 변화보다는 surface concentration의 변화에 따른 특성변화가 주도적으로 나타났다.

• 한국진공학회지
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• 제5권2호
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• pp.99-106
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• 1996

Two types of regularization method (singular system and HMP approaches) for generating depth-concentration profiles from angle-resolved XPS data were evaluated. Both approaches showed qualitatively similar results although they employed different numerical algorithms. The application of the regularization method to simulated data demonhstrates its excellent utility for the complex depth profile system . It includes the stable restoration of depth-concentration profiles from the data with considerable random error and the self choice of smoothing parameter that is imperative for the successful application of the regularization method. The self choice of smoothing parameter is based on generalized cross-validation method which lets the data themselves choose the optimal value of the parameter.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.709-713
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• 2004

Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

• 한국지형학회지
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• 제26권4호
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• pp.21-31
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• 2019

Timing of terrace formation is a key information for understanding the evolution of fluvial systems. In particular, dating strath terrace (i.e. timing of terrace abandonment) is more difficult than depositional terrace that is conventionally constrained by radiocarbon, OSL and other dating methods targeting samples within terrace deposit. Surface exposure dating utilizing cosmogenic ¹⁰Be provides more reliability because it can be applied directly to the surface of a fluvial terrace. Thus, this method has been increasingly used for alluvial deposits. As well as other geomorphic surfaces over the last decades. Some inherent conditions, however, such as post-depositional ¹⁰Be concentration (i.e. inheritance), surface erosion rate, and density change challenge the application of cosmogenic ¹⁰Be to depositional terrace surface against simple bedrock surface. Here we present the first application of ¹⁰Be depth profile dating to a thin-gravel covered strath terrace in Korea. Monte Carlo simulation (MCS) helped us in better constraining the timing of abandonment of the strath terrace, since which its surface stochastically denuded with time, causing unexpected change of ¹⁰Be production with depth. The age of the strath terrace estimated by MCS was 109 ka, ~4% older than the one (104 ka) calculated by simple depth profile dating, which yielded the best-fit surface erosion rate of 2.1 mm/ka. Our study demonstrates that the application of ¹⁰Be depth profile dating of strath terrace using MCS is more robust and reliable because it considers post-depositional change of initial conditions such as erosion rate.

• 한국해안·해양공학회논문집
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• 제23권1호
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• pp.11-17
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• 2011

항만콘크리트 구조물의 내구성 저하의 중요한 요인은 염소이온침투에 의한 철근의 부식이다. 따라서, 항만콘크리트 구조물의 염소이온 깊이와 깊이별 염소이온농도를 정량적으로 파악할 수 있다면, 구조물의 잔존수명을 사전에 비교적 정확하게 평가할 수 있다. 이러한, 구조물에서의 염소이온농도를 예측하기 위해서는 모델식의 개발이 필요하고 모델식은 정확한 현장데이타를 기반으로 한다. 이에 본 연구에서는 현장 항만구조물에 대한 코어시료를 채취하고 본 시료들에 대한 염소이온침투깊이와 깊이별 염소이온농도를 측정하고자 하였다. 시료는 1차로 완도항, 마산항, 인천항에서 채취하였고, 2차로 여수항과 동해항에서 채취하였다. 수직 높이별 영향을 파악하기 위해서 대기부, 비말대, 간만대로 나뉘어 각 층별 8개의 시료를 획득하였다. 채취된 시료중에서 4개는 강도 실험을 실시하였고, 나머지 4개로 내구성 실험을 실시하였다. 2개의 시료에 대해서는 질산은 변색법을 이용하여 염소이온 침투깊이를 측정 하였다. 나머지 2개의 시료는 깊이별로 5 mm 두께의 절편을 채취하고 이를 ASTM C 114의 시험법에 따라 염화물 이온농도를 측정하였다. 측정결과를 바탕으로 지역과 수직위치에 따른 염소이온 침투의 특성을 파악하였다.

• Nuclear Engineering and Technology
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• 제51권8호
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• pp.2013-2017
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• 2019

The radon concentrations in soil air were measured before and after a rainfall. ²²⁶Ra concentration, porosity, moisture content and temperature in soil were measured at Kyungpook National University in Daegu. As the results of measurement and analysis, the arithmetic mean of measured ²²²Rn concentration increased from 12100 ± 500 Bq/㎥ to 16200 ± 600 Bq/㎥ after the rainfall. And the measured ²²⁶Ra concentration was 61.4 ± 5.7 Bq/kg and the measured porosity was 0.5 in soil. The estimated values of ²²⁶Ra concentration and porosity using diffusion model of ²²²Rn in soil were 60.3 Bq/kg and 0.509, respectively. The estimated values were similar to the measured values. ²²²Rn concentration in soil increased with depth and moisture content. The estimations were obtained through fitting based on the diffusion model of ²²²Rn using the measurement values. The measured depth profiles of ²²²Rn were similar to the calculated depth profiles of ²²²Rn in soil. We hope that the results of this study will be useful for environmental radiation analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.72-75
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• 1994

In this paper, a novel method to figure out the relative residual stress distribution along the depth of silicon diaphragms is presented Cantilevers with various thickness are fabricated by the time controlled etching method using EPW as an etchant. The boron concentration along the depth of the cantilevers is obtained by the TSUPREM IV simulation, and the etching time to get the proper thickness is calculated. By measuring deflections of the p+ silicon cantilevers the stress profile along the depth of diaphragm is calculated. The obtained stress profile is reasonable and useful to expect the deflection of cantilevers and the buckling of diaphragms.