• Title/Summary/Keyword: Computer simulation method

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An Integrated Software Testing Framework for FPGA-Based Controllers in Nuclear Power Plants

  • Kim, Jaeyeob;Kim, Eui-Sub;Yoo, Junbeom;Lee, Young Jun;Choi, Jong-Gyun
    • Nuclear Engineering and Technology
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    • v.48 no.2
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    • pp.470-481
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    • 2016
  • Field-programmable gate arrays (FPGAs) have received much attention from the nuclear industry as an alternative platform to programmable logic controllers for digital instrumentation and control. The software aspect of FPGA development consists of several steps of synthesis and refinement, and also requires verification activities, such as simulations that are performed individually at each step. This study proposed an integrated software-testing framework for simulating all artifacts of the FPGA software development simultaneously and evaluating whether all artifacts work correctly using common oracle programs. This method also generates a massive number of meaningful simulation scenarios that reflect reactor shutdown logics. The experiment, which was performed on two FPGA software implementations, showed that it can dramatically save both time and costs.

BRIEF REVIEW OF LATEST DIRECT NUMERICAL SIMULATION ON POOL AND FILM BOILING

  • Kunugi, Tomoaki
    • Nuclear Engineering and Technology
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    • v.44 no.8
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    • pp.847-854
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    • 2012
  • Despite extensive research efforts, the mechanism of the nucleate boiling phenomena is still not clear. A direct numerical simulation of the boiling phenomena is one of the promising approaches in order to clarify its heat transfer characteristics and discuss their mechanism. Therefore, many DNS procedures have been developed based on recent highly advancing computer technologies. This brief review focuses on the state of the art in direct numerical simulation of the pool boiling phenomena over the past two decades. In this review, the fundamentals of the boiling phenomena and the bubble departure and micro-layer models are briefly introduced, and then the numerical procedures for tracking or capturing interface/surface shape such as the front tracking method, level set method, volume of fluid treatments, and other methods (Lattice Boltzmann method, phase-field method and so on) are briefly reviewed.

New Monte-Carlo based simulation program suitable for low-energy ions irradiation in pure materials

  • Ghadeer H. Al-Malkawi;Al-Montaser Bellah A. Al-Ajlony;Khaled F. Al-Shboul;Ahmed Hassanein
    • Nuclear Engineering and Technology
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    • v.55 no.4
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    • pp.1287-1299
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    • 2023
  • A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

Transient Simulation of Graphene Sheets using a Deterministic Boltzmann Equation Solver

  • Hong, Sung-Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.288-293
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    • 2017
  • Transient simulation capability with an implicit time derivation method is a missing feature in deterministic Boltzmann equation solvers. The H-transformation, which is critical for the stable simulation of nanoscale devices, introduces difficulties for the transient simulation. In this work, the transient simulation of graphene sheets is reported. It is shown that simulation of homogeneous systems can be done without abandoning the H-transformation, as much as a specially designed discretization method is employed. The AC mobility and step response of the graphene sheet on the $SiO_2$ substrate are simulated.

객체지향 기법을 이용한 다관절 크레인의 유압 시스템 시뮬레이션

  • 김문기;심영보;장명수;이교일
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1995.10a
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    • pp.751-755
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    • 1995
  • It become more difficult to anticipate the performance of fluid power systems as the number of components increases because of nonlinearrities inherent in hydraulic components. In this situation, the computer simulation technique can be an effective tool in the analysis and design of fluid power systems. In this paper, simulation results are presented for dynamic characteriatics of a knuckle crane. Simple models for hydraulic components and relatively detailed motion equations for attachments are used. the simulation reaults are very close to those of experiments. The simulation is performed using a simulation package developed with object-oriented method. This package provides the encironment that user can construct desirct desired circuits form the component library, checks the continuity and compatibility conditions automatically and executes simulation

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A Design of Velocity Type Digital Control Systems for Space Robots Using Transpose of GJM

  • Mahiro, Oya;Graefe, Volker
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.147.3-147
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    • 2001
  • We have proposed a digital control method, where the controlled variable is a joint angular velocity, of space robot manipulators using the transpose of Generalized Jacobian Matrix. The explicit relationship between the control law and the sampling period, however, is unknown because the controller gains include the sampling period implicitly. This paper presents a novel digital control method which explicitly describes the relation between the sampling period and the controller gains. Computer simulation of a 3-DOF planar space robot manipulator is peformed. Simulation result demonstrates the effctiveness of the proposed method.

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Finite Element Analysis of a Cold Forging Process Having a Floating Die (부유금형을 가진 냉간단조 공정의 유한요소해석)

  • 류찬호;전만수
    • Transactions of Materials Processing
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    • v.9 no.2
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    • pp.159-164
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    • 2000
  • In this paper, a computer simulation technique for the forging process having a floating die is presented. The penalty rigid-plastic finite element method is employed together with an iteratively force-balancing method, in which the convergence is achieved when the floating die part is in force equilibrium within the user-specified tolerance. The force balance is controled by adjusting the velocity of the floating die in an automatic manner. An application example of a three-stage cold forging process is given.

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Computer aided simulation of spark plasma sintering process (Part 1 : formulation) (스파크 플라즈마 소결공정의 전산모사(1부 : 수식화))

  • Keum Y.T.;Jean J.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.1
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    • pp.38-42
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    • 2006
  • Spark plasma sintering processes have been rapidly introduced recently to improve the quality and productivity of ceramic products and to solve the problem of environmental pollutions. Sintering temperatures and pressing pressures in the spark plasma sintering process are known to be the important factors highly affecting the quality of the ceramics. In this research, in order to see the effects of sintering temperatures and pressing pressures on the grain growth during the spark plasma sintering process of $Al_2O_3$ the grain growth processes associated with sintering temperatures and pressing pressures are simulated by the Monte Carlo method (MCM) and the finite element method (FEM). In this Part 1, the formulations for the simulation, which is the theoretical background of Part 2, are introduced.

The analysis on the Energy Distribution Function for Electron in SiH4-Ar Gas Mixtures (SiH4-Ar혼합기체의 전자분포함수 해석)

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.53 no.2
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    • pp.65-69
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    • 2004
  • This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

Experimental Study for Gate Trap and Generation Current using DCIV Method

  • Kim, Young Kwon;Lee, Dong Bin;Choi, Won Hyeok;Park, Taesik;Lee, Myoung Jin
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.2
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    • pp.223-225
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    • 2016
  • The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.