• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.197-199
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• 2007

Four banana-shaped compounds have beene synthesized introducing ester linking group into mesogenic unit, varying the central core with 1,6-, 1,7-, 2,3-, and 2,7-naphthylene units, and introducing the dodecyloxy group as the terminal flexible unit. All obtained compounds except one with 1,7-naphthylene unit were reversibly thermotropically liquid crystalline. The compound with 1,7-naphthylene unit could not form the mesophase due to its asymmetrical and sharp substitution angle. The compounds with 1,6- and 2,3-naphthylene units showed an antiferroelectric switchable smectic phase, which has been designated B2 phase. Interestingly, the compound with the 2,3-naphthylene unit showed the two mesophases of B2 and nematic phase.

• 한국재료학회지
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• 제14권5호
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• pp.322-327
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• 2004

Copper-based leadframe sheets were oxidized in two kinds of hot alkaline solutions to form brown-oxide or black-oxide layer on the surface. The oxide coated leadframe sheets were molded with epoxy molding compound (EMC). After post mold curing, the oxide-coated EMC-leadframe joints were machined to form sandwiched Brazil-nut (SBN) specimens. The SBN specimens were used to measure the fracture toughness of the EMC/leadframe interfaces under mixed-mode (mode I + mode II) loading conditions. Fracture surfaces were analyzed by various equipment to investigate failure path. The results revealed that the failure paths were strongly dependent on the oxide type. In case of brown oxide, hackle-type failure was observed and failure path lay near the EMC/CuO interface with a little inclining to CuO at all case. On the other hand, in case of black oxide, quite different failure path was observed with respect to the distance from the tip of pre-crack and phase angle. Different failures occurred with oxide type is presumed to be due to the difference in microstructure of the oxides.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 접착 및 계면
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• 제12권4호
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• pp.144-150
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• 2011

폴리스티렌을 저수축제로 사용하고 Zn-stearate를 이형제로 사용하여 함량변화에 따라 벌크 몰드컴파운드의 표면형태 및 기계적 물성에 미치는 영향을 고찰하였다. XPS, 접촉각 측정기 등을 이용하여 표면과 깊이 방향에 대한 원소함량과 접촉각을 측정하였고, 표면형태는 FESEM을 이용하여 관찰하였으며, 표면조도 측정은 AFM을 이용하였다. 저수축제를 첨가하지 않은 경우에 비교하여 저수축제를 9.0 wt% 첨가하였을 경우에는 체적수축률은 0.35%에서 0.05%로 감소하였으며, 표면조도는 $0.27{\mu}m$에서 $0.12{\mu}m$로 감소하였다. 이형제의 함량을 1.8 wt%에서 3.6 wt%로 증가시켰을 경우에는 이형제가 주로 표면에 존재하고 표면조도를 증가시키는 것을 확인하였다. 저수축제의 함량을 5.0 wt%에서 9.0 wt%로 증가시킴에 따라 굴곡탄성율과 충격강도가 약 30% 감소하였다.

• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.977-982
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• 2004

The reaction of $cis-[Cr([14]-decane)(OH_2)_2]^+$ ([14]-decane = rac-5,5,7,12,12,14-hexamethyl-1,4,8,11-teraazacyclotetradecane) with auxiliary ligands {$L_a$ = benzoate(bz) or chlorobenzoate(cbz)} leads to a new compound $[Cr([14]-decane)(bz)_2]ClO_4$ or $[Cr([14]-decane)(cbz)_2]ClO_4$. These complexes have been characterized by a combination of elemental analysis, conductivity, IR and Vis spectroscopy, mass spectrometry, and X-ray crystallography. The crystal structure of $[Cr([14]-decane)(cbz)_2]^+$ was determined. The complex shows a distorted octahedral coordination environment with the macrocycle adopting a folded cis-V conformation. The angle $N_{axial}-Cr-N_{axial}$ deviates by $14.5^{\circ}$ from the ideal value of $180^{\circ}$for a perfect octahedron. The bond angle cis-O-Cr-O between the Cr(III) ion and the two carboxylate oxygen atoms of the monodentate p-chlorobenzoate ligands is close to 90$^{\circ}$. The FAB mass spectra of the $cis-[Cr([14]-decane)(La)_2]ClO_4$ display peaks due to the molecular ions $[Cr([14]-decane)(bz)_2-H]^\;,\;[Cr([14]-decane)(cbz)_2-2H]^$ at m/z 578, 646, respectively.

• 대한기계학회논문집
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• 제18권8호
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• pp.2158-2166
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• 1994

In order to understand the package crack emanating from the edge of leadframe after the delamination between leadframe and epoxy molding compound in an electronic packaging of surface mounting type, the M-integral and J-integral in fracture mechanics are obtained. The effects of geometry, material properties and molding process temperature on the package crack are investigated taking into account the temperature dependence of the material properties, which simulates a more realistic condition. If the temperature dependence of the material properties is considered the result of analysis conforms with observations that the crack is kinked at between 50 and 65 degree. However, in case of constant material properties at the room temperature it is found that the J-integral is underestimated and the kink crack angle is different form the observation. The effects of the material properties and molding process temperature on J-integral and crack angle are less significant that the chip size for the cases considered here. It is suggested that the geometric factors such as ship size, leadframe size are to be well designed in order to prevent(or control) the occurrence and propagation of the package crack.

• Archives of Pharmacal Research
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• 제2권2호
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• pp.99-110
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• 1979

The crystal structure of sulfapyridine, $C_{11}H_{11}N_{3}O_{2}S$, has been determined by X-ray diffraction method. The compound crystallizees in the monoclinic space group C2/c with a = 12, 80(4), b= 11.72(4), $c= 15.36(5){\AA}, {\beta}= 94(3)^{\circ}$and Z = 8. A total of 1133 observed reflections were collected by the Weissenberg method with CuKaradiation. Structure was solved by the heavy atom method and refined by isostropic block-diagonal least-squares method to the R value of 0.14. The nitrogen in the pyridine ring of sulfapyridine is associated with an extra-annular hydrogen. The C (benzene ring) S-N-C (pyridine ring) group adopts the gauche form with a fonformational angle of $71^{\circ}$. The benzene ring are inclined at angle of $84^{\circ}.to the pyridine ring plane. Sulfapyridine shows three different hydrogen bonding in the crystal. They are two N-H...O hydrogen bonds with the distance of 2.90 and 2.98${\AA}$ respectively, and on N-H...N with the distance of 3.06 ${\AA}$.

• 대한기계학회논문집B
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• 제25권8호
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• pp.1131-1139
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• 2001

Experimental results are presented, which describe the effect of blowing ratio on film cooling from two rows of holes with opposite orientation angles. The inclination angle is fixed at 35°, and the orientation angles are set to be 45°for the downstream row, and -45°for the upstream row. The studied blowing ratios are 0.5, 1.0 and 2.0. The boundary layer temperature distributions are measured using thermocouple at two downstream locations. Detailed adiabatic film cooling effectiveness and heat transfer coefficient distributions are measured with TLC(Thermochromic Liquid Crystal). The adiabatic film cooling effectiveness and heat transfer coefficient distributions are discussed in connection with the injectant behaviors inferred from the boundary layer temperature distributions. Film cooling performance, represented by heat flux is evaluated from the adiabatic film cooling effectiveness and heat transfer coefficient data. The results show that the investigated geometry provides improved film cooling performance at the high blowing ratios of 1.0 and 2.0.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.113-118
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• 2000

Experimental results describing the effects of blowing ratio on film cooling from two rows of holes with opposite orientation angles are presented. The inclination angle was fixed at $35^{\circ}$ and the orientation angles were set to be $45^{\circ}$ for downstream row. and $-45^{\circ}$ for upsream row. The studied blowing ratios were 0.5, 1.0 and 2.0. The boundary layer temperature distributions were measured using thermocouple at two downstream loundary layer temperature distributions were measured using thermocouple at two downstream locations. Detailed adiabatic film cooling effectiveness and heat transfer coefficient distributions were measured with TLC(Thermochromic Liquid Crystal). The adiabatic film cooling effectiveness and heat transfer coefficient distributions are discussed in connection with the injectant behaviors inferred from the boundary layer temperature distributions. Film cooling performance, represented by heat flux was calculated with the adiabatic film cooling effectiveness and heat transfer coefficient data.

• 한국표면공학회지
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• 제29권6호
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• pp.781-787
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• 1996

Silicom oxide films with good water repellency were prepared by rf plasma-enhanced CVD (rf-PECVD) using four kinds of organosilicon compound, which had different number of methyl ($CH_3$) groups, and oxygen as gas sources. The differences in the deposition rates, film composition and film properties were studied in detail. Water repellency depended on the number of $CH_3$ groups in the organosilicon compounds and the partial pressure of oxygen in the plasma. The highest contact angle for water drops, about 95 degrees, was obtained when trimethy lmethoxy silane (TMMOS) was used. The contact angle decreased with the amount of oxygen gas introduced into the plasma. The dissociation of $CH_3$ groups by adding oxygen was comfirmed by Fourier transform infrared spectroscopy(FTIR) and X-ray photoelectron spectroscopy (XPS). The optical properties were estimated by double-beam spectroscopy and ellipsometry. The transmittance of the glass plate coated by the film prepared with tetramethoxy silane (TMOS) was about 90% and the refractive index of film was 1.44. This value was smaller than the refractive index of a glass plate(soda lime glass, refractive index is 1.515) and this film played a role of anti-refractive coating.