• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1206-1208
• /
• 1993

This paper is to study and realize a measuring device for complex dielectric constants. The device is consisted in order of interface unit, external RAM, programmable counter, D/A converter, measuring circuit, Sample & Hold circuit, A/D converter and related control circuits. Various excitation waves are digitalized and sent to the 4096 static RAM by personal computer. These data saved in the RAM are converted to analog excitation waves through D/A converter. The frequency of excitation wave is depend on the read-out speed of the RAM according to clock pulses. Such generated waves are applied to dielectrics under test and their responses are sampled and converted to digital data through A/D converter. The computer takes the digital data and calculates finally the complex dielectric constants. The frequencies for Measurement ranges from 0.04 Hz to 10 kHz.

• 전자공학회논문지A
• /
• 제33A권2호
• /
• pp.69-77
• /
• 1996

We analyzed wideband propagation characteristics of a microstrip transmission line based on FR-4 composite substrate using the wideband complex dielectric constant model and the phenomenological loss equivalence method. The loss calculated by constant relative permittivity and loss tangent is greatly overestimatd compared to that calculated by the frequency-dependent complex relative permittivity. This wideband analysis can be helpful to characterize high-speed and high-density transmission lines associated with the wideband dielectric characteristics and shows that the FR-4 composite substrate has high potential of high frequency circuit applications in terms o fthe propagation loss.

• 한국응용과학기술학회지
• /
• 제17권1호
• /
• pp.29-35
• /
• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.490-491
• /
• 2007

We have investigated dielectric dispersion and absorption in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric dispersion and absorption of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan $\delta$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권10호
• /
• pp.1041-1047
• /
• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• Macromolecular Research
• /
• 제15권2호
• /
• pp.114-128
• /
• 2007

Polyimides are one of the most important classes of polymers used in the microelectronics and photoelectronics industries. Because of their high thermal stability, chemical resistance, and good mechanical and electric properties, polyimides are often applied in photoresists, passivation and dielectric films, soft print circuit boards, and alignment films within displays. Recently, fully aliphatic and alicyclic polyimides have found applications as optoelectronics and inter layer dielectric materials, due to their good transparencies and low dielectric constants $(\varepsilon)$. The low molecular density, polarity and rare probability of forming inter- or intra-molecular charge transfers, resulting in lowering of the dielectric constant and high transparency, are the most striking characteristics of aliphatic polyimide. However, the ultimate end use of polyimides derived from aliphatic monomers is in their targeted applications that need less stringent thermal requirements. Much research effort has been exerted in the development of aliphatic polyimide with increased thermal and mechanical stabilities, while maintaining their transparencies and low dielectric constants, by the incorporation of rigid moieties. In this article, the recent research process in synthesizing fully aliphatic polyimides, with improved dimensional stability, high transparency and low $\delta$values, as well as the characterizations and future scope for their application in micro electric and photo-electronic industries, is reviewed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1988년도 추계학술대회 논문집
• /
• pp.105-107
• /
• 1988

The dielectric properties of complex perovskite compound Sr$(Mg_{1/3}Mb_{2/3})$$O_3$-Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$(BMN) system were investigated as a function of composition and sintering time. In the case of the specimens sintered at $1650^{\circ}C$ for same time, dielectric constant and dielectric loss were increased with increasing the mole ratio of BMN. The maximum temperature coefficient of resonant frequency was found in composition Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$. In the case of the specimens with same composition, dielectric constant and dielectric loss were slightly increased with increasing the sintering time. As the sintering time was increased, the temperature coefficient of resonant frequency for SMN was slightly increased, however, that of BMN and ($Sr_{1/2}Ba_{1/2}$) ($Mg_{1/3}Ta_{2/3}$)$O_3$ was largely depended on sintering time.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.221-224
• /
• 2000

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.292-293
• /
• 2006

We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.293-294
• /
• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.