• 제목/요약/키워드: Coercive voltage

검색결과 69건 처리시간 0.022초

Preparation of ferroelectric SrBi2Ta2O9 thin films deposited by multi-target sputtering

  • Hoon, Yang-Cheol;Gil, Yoon-Soon
    • Journal of Korean Vacuum Science & Technology
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    • 제2권2호
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    • pp.92-96
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    • 1998
  • Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

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EFFECTS OF Pt AND Cr ADDITION ON MAGNETIC PROPERTIES IN Co-Cr-P-Pt MAGNETIC THIN FILMS

  • Sohn, H.K.;Shin, K.H.;Lee, T.D.;Kang, T.
    • 한국자기학회지
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    • 제5권5호
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    • pp.618-622
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    • 1995
  • We studied the effects of Pt and Cr addition in a new Co-Cr-P-Pt alloy system with the coercivity higher than 2000 Oe even when they were deposited without substrate heating and bias voltage. The coercivity of the films increased from 1000 to 2000 Oe or higher by addition of 12 at.%Pt. The variation of the anisotropy field with increasing Pt content was similar to that of the coercivity. This indicate that the increase of the coercivity might be associated with increase of the anisotropy field with Pt addition. With the addition of Cr, the coercivity of the films increased up to 8 at.%Cr and the coercive squareness of the films decreased. The angular variation of coercivity deviated at a lower angle from domain wall motion mode as the Cr content increases. From these result, it is believed that the grain isolation of the films is enhanced with the addition of Cr.

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Degradation Evaluation of Mechanical Property for Modified 9Cr-1Mo Steel by Reversible Permeability

  • Bong, Chung-Jong;Ryu, Kwon-Sang;Nahm, Seung-Hoon;Kim, Eun-Kyu
    • Journal of Magnetics
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    • 제16권1호
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    • pp.42-45
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    • 2011
  • The present work studies a nondestructive evaluation of the degradation of modified 9Cr-1Mo steel using a magnetic method based on the existence of the peaks of reversible permeability (RP) in the differential magnetization around the coercive force. The apparatus is based on detection of the voltage induced in a coil using a lock-in amplifier tuned to the frequency of the AC perturbing field. Results obtained for the reversible permeability and Vickers hardness on the aged samples showed the peak interval of reversible permeability (PIRP) and Vickers hardness decrease as aging time increased. The correlation between Vickes hardness and the PIRP could be used to evaluate degradation of modified 9Cr-1Mo steel.

고상 반응법에 의해 제조된 Pb$(Zr_xTi_{1-x})O_3$ 세라믹스에서 펄스 전계에 의한 전자 방출 (Pulse electric field-excited electron emission from Pb$(Zr_xTi_{1-x})O_3$ ceramics prepared by conventional solid state reaction)

  • 곽상희;김태희;박경봉;김창수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1867-1869
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    • 1999
  • Pulse electric field induced electron emission from ferroelectrics has been studied with Pb$(Zr_xTi_{1-x})O_3$ ceramics with varying Zr/Ti ratio from 35/65 to 65/35, Electron emission was proved to be concentrated on the electrode edge by emission profile test and emission capture photographs. The 65/35 composition showed largest emission charge in lowest field and lowest emission threshold field. The emission characteristics are closely dependent on their ferroelectric properties in hysteresis curve. Electron emission charge increases with the polarization charge and emission threshold voltage is dependent on coercive field regardless of their composition. But dielectric constant has little relation with emission property. Electron emission charge increases exponentially with pulse electric field irrespective of composition. On the assumption that the surface potential is linear with the pulse electric field, electron emission can be regarded as a field emission at the electrode edge using Fowler-Nordheim plot of ln$(Q_e/E_{fe})$ to $1/E_{fe}$.

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(알니코, 사마리움-코발트) 본드자석의 제조 및 자기적 특성연구 (Fabrication of the (Alnico, Sm-Co) Bonded Magnet and its Magnetic Properties)

  • 김정식
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.988-995
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    • 2010
  • In this study the (Alnico, Sm-Co) bonded magnets were fabricated by mixing the Sm-Co added alnico alloy powders with epoxy resin and binder, appropriately. Also, the hybrid ring magnets of (Alnico, Sm-Co)/Sr-ferrite were fabricated by coupling the Sr-ferrite composite layer with an (Alnico, Sm-Co) magnet. The magnetic properties of (Alnico, Sm-Co) ring magnets were varied with the amount of Sm-Co powders. The addition of Sm-Co powders increased a remanent induction($B_r$) and coercive force($_BH_C$), while decreasing a surface flux density and repulsive distance. The surface flux density and repulsive distance for the (Alnico, Sm-Co) ring magnet increased with a magnetizing voltage up to about 160 V and reached an apparent saturation point. Also, the measurements of temperature and moisture characteristics showed that the surface flux densities of N-S poles and repulsive distance decreased a little within 4% after 10 days passed.

MOD법을 이용한 BLT박막의 제초 및 특성에 관한 연구 (The Preparation and Characterization of BLT Thin Films by MOD Process)

  • 이진한;장건익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.186.1-189
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    • 2001
  • Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

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초고집적 회로용 PZT 박막의 형성조건 -스퍼터링법으로 Si, TiN/Ti/Si 기판위에 증착된 PZT 박막의 급속 열처리에 의한 결정화 및 특성- (Formation Conditions of PZT Thin Films for ULSI -A study on the formation and characteristics of PZT thin films by rapid thermal annealing-)

  • 마재평;박치선;백수현;황유상;백상훈;최진성;조현춘
    • 전자공학회논문지A
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    • 제30A권10호
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    • pp.59-66
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    • 1993
  • PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

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Electrical Properties of Sol-Gel Derived Ferroelectric Bi3.35Sm0.65Ti3O12 Thin Films

  • Kang, Dong-Kyun;Cho, Tae-Jin;Kim, Byong-Ho
    • 한국세라믹학회지
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    • 제42권3호
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    • pp.150-154
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    • 2005
  • Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

MEMS 공정 제작방법에 의한 솔레노이드형 여자 코일과 검출코일을 사용한 마이크로 플럭스게이트 센서 (MEMS-BASED MICRO FLUXGATE SENSOR USING SOLENOID EXCITATION AND PICK-UP COILS)

  • 나경원;박해석;심동식;최원열;황준식;최상인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.172-176
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    • 2002
  • This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.

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Properties of $Sr_{0.8}Bi_{2.3}{(Ta_{1-x}Nb_{x})}_{2}O_{9+{\alpha}}$ Thin Films

  • Park, Sang-Jun;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • 제1권1호
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    • pp.22-25
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    • 2000
  • Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

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