• Journal of Electrochemical Science and Technology
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• 제7권3호
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• pp.206-213
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• 2016

Transition metal oxide-based electrodes for lithium ion batteries have recently attracted much attention because of their high theoretical capacity. Here we report the electrochemical behavior of cobalt oxide nanorods as anodes, prepared by a template-free, one-step electrochemical deposition of cobalt nanorods, followed by an oxidation process. The as-deposited cobalt has a slightly convex columnar structure, and controlled thermal oxidation produces cobalt oxides of different Co/O ratios, while the original shape is largely preserved. As an anode in a rechargeable lithium battery, the Co/O ratio has a strong effect on initial capacity and cycling stability. In particular, the one-dimensional Co@Co_xO_y core shell structure obtained from a mild heat-treatment results in superior cycling stability.

• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.927-930
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• 2013

We developed an electroplating process of cobalt nanowires of which line-widths were between 70 and 200 nm. The plating electrolyte was made of $CoSO_4$ and an organic additive, dimethyldithiocarbamic acid ester sodium salt (DAESA). DAESA in plating electrolytes had an accelerating effect and reduced the surface roughness of plated cobalt thin films. We obtained void-free cobalt nanowires when the plating current density was 6.25 mA/$cm^2$ and DAESA concentration was 1 mL/L.

• Journal of Electrochemical Science and Technology
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• 제15권1호
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• pp.161-167
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• 2024

Despite the important role of manganese (Mn) in cobalt-free, Ni-rich cathode materials, existing reports on the effects of Mn as a substitute for cobalt are not consistent. In this work, we analyzed the performance of cathodes comprised of Li(Ni_1-xMn_x)O₂ (LNMO). Both beneficial and detrimental results occurred as a result of the Mn substitution. We found that a complex interplay of effects (Li/Ni mixing driven by magnetic frustration, grain growth suppression, and retarded lithium insertion/extraction kinetics) influenced the performance and was intimately related to calcination temperature. This indicates the importance of establishing an optimal reaction temperature for the development of high-performance LNMO.

• 대한환경공학회지
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• 제22권12호
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• pp.2163-2173
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• 2000

메탄자화균에 의한 코발트 제거의 최적 pH 영역은 6.0~12.0이었으나 메탄자화균을 넣지 않은 blank는 10.5~11.5이었다. 코발트의 제거능은 pH에 크게 의존하였으나 blank보다는 민감하지 않았다. 초기 pH 6.0에서 1.0 g/L의 메탄자화균을 투입했을 때 170 mg Co/g biomass가 제거되었다. SEM 분석 결과에 의하면 코발트는 메탄자확균의 표면이나 세포의 분비 고분자에 흡착되어 제거된 것으로 사료된다. 초기 pH 6.0, 400 mg Co/L에서 메탄자화균의 최적의 투입량은 1.0 g/L이었다. 2.0 M NaCl과 $NaNO_3$의 높은 이온강도 하에서도 코발트 제거능은 그다지 영향을 받지 않았다.

• 한국재료학회지
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• 제24권6호
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• pp.319-325
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• 2014

Cobalt nano-rods were fabricated using a template-free electrochemical-deposition process. The structure of cobalt electro-deposits strongly depends on the electrolyte composition and on the density of the applied current. In particular, as the content of boric acid increased in the electrolyte, deposits of semi-spherical nuclei formed, and then grew into one-dimensional nano-rods. From analysis of the electro-deposits created under the conditions of continuous and pulsed current, it is suggested that the distribution of the active species around the electrode/electrolyte interface, and their transport, might be an important factor affecting the shape of the deposits. When transport of the active species was suppressed by lowering the deposition temperature, more of the well-defined nano-rod structures were obtained. The optimal conditions for the preparation of well-defined nano-rods were determined by observing the morphologies resulting from different deposition conditions. The maximum height of the cobalt nano-rods created in this work was $1{\mu}m$ and it had a diameter of 200 nm. Structural analysis proved that the nano-rods have preferred orientations of (111).

• Bulletin of the Korean Chemical Society
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• 제16권1호
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• pp.12-16
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• 1995

The diastereoselectivity of addition reaction of crotylmetal reagents to cobalt-complexed acetylenic aldehydes and metal-free aldehydes was examined. The anti-diastereomer was the predominant product when the crotyl metallics were Cr, Sn, and Zr. In THF, the uncomplexed aldehydes normally gave higher anti-diastereoselectivity. However, the cobalt-complex of silicon-substituted propynals with three bulky substituents produced increased proportions of syn-diastereomer. In DMF, the selectivity shifted towards syn-isomer except in the case of dimethylphenylsilyl substituent. When tributylstannane was used in the presence of BF3 etherate, moderate syn- selectivity was observed with uncomplexed aldehydes, but only decomposed products from complexed aldehydes.

• Bulletin of the Korean Chemical Society
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• 제12권5호
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• pp.540-544
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• 1991

Thin film being formed on the surface of cobalt in the early stage of electrochemically induced passivation was studied by the three-parameter ellipsometry. The growth of the passive film was complete in a few seconds from the onset of the passivating potential, and was followed by a slight decrease in the thickness in 4-40 seconds. The optical constants of the passive film changed gradually during the changes in the thickness. The thickness and the optical properties at the steady state of passivation depended on the potential of the electrode. From the coulometric data and the optical properties, the composition of the passive films was deduced to be close to those of CoO, ${Co_3}{O_4}$ and ${Co_2}{O_3}$ depending on the potential. Cathodic reduction in the presence of EDTA was found to be an efficient way to obtain film-free reference surface of cobalt.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• 대한화학회지
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• 제22권1호
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• pp.25-29
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• 1978

수용액 중에서 ethylenediamine-tetraacetatocobaltate(III) 錯物에 트리메틸렌디아민(tn)을 반응시켜 얻어지는 [Co(tn)(HEDTRA)]Cl${\cdot}$2$H_2O$ 錯物을 수소이온형 陽이온교환수지, Dowex 50WX8을 이용하여 분리하였다. $EDTRA^{3-}$(ethylenediamine-triacetate) 리간드는 유리 식초산 가지를 갖고 4자리 형태로 코발트(III) 이온에 배위되어 있으며, 원소분석, UV, IR, NMR 등 분광학적 방법을 이용하여 얻어진 錯物은 가능한한 기학적 이성질체 중에서 trans(O-O)(1) 형태의 구조를 가지고 있음을 확인하였다.

• Advances in nano research
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• 제3권2호
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• pp.111-121
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• 2015

$CoFe_2O_4$ nanotubes and porous nanorods were prepared via a simple one-pot template-free hydrothermal method and were used as an adsorbent for the removal of dye contaminants from water. The properties of the synthesized nanotubes and porous nanorods were characterized by electron diffraction, transmission electron microscopy and x-ray powder diffraction. The Adsorption characteristics of the $CoFe_2O_4$ were examined using polar red dye and the factors affecting adsorption, such as, initial dye concentration, pH and contact time were evaluated. The overall trend followed an increase of the sorption capacity reaching a maximum of 95% dye removal at low pHs of 2-4. An enhancement in the removal efficiency was also noticed upon increasing the contact time between dye molecules and $CoFe_2O_4$ nanoparticles. The final results indicated that the $CoFe_2O_4$ nanotubes and porous nanorods can be considered as an efficient low cost and recyclable adsorbent for dye removal with efficiency 94% for Cobalt ferrite nanotubes and for Cobalt ferrite porous nanorods equals 95%.