• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.256-260
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• 2014

This study was carried on the phenomena in reactivity with the clay surface according to the thickness of the cobalt component coating. In the coated specimen, it was observed that the cobalt component was spreaded to diffuse with a constant thickness from the surface of it and the diffusion layer at the white porcelain soil was more increased with the increase of the amount of cobalt sulfate than at the celadon porcelain one. It was evaluated that the color of the surface on the coated specimen at the white porcelain soil was changed from grayish blue to blue and the $L^*$ value was decreased from 51.78 to 37.61 and also in the case of the coated specimen in celadon porcelain soil, $L^*$ value was from 53.91 to 38.93 and the color was from dark olive gray to dark gray. The physical properties of the specimen were characterized by X-ray diffraction, Scanning electron microscope, Dilatometer, TG-DTA, UV-vis spectrophotometer and HRDPM.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.15-21
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• 1992

Acicular ${\gamma}-Fe_{2}O_{3}$ particles were heated at $90^{\circ}C$ in alkaline solution containing mixed solution of dyadic metal with $Co^{+2}/Fe^{+2}$ ratio of 0.5. When cobalt content was increased, the coercivity of resultant product increased linearly, and surface area decreased. The cobalt ferrite was grown epitaxially on the surface ${\gamma}-Fe_{2}O_{3}$ crystal, and the increase of coercivity was attributed to the crystalline magnetic anisotropy of the cobalt ferrite which is conform to coating layer. We can expect superior magnetic properties above normal ratio of 2. The progress of reaction has an effect on coercivity of cobalt ferrite epitaxial iron oxide. The stability of temperature and the change om standin& of $Co-{\gamma}-Fe_{2}O_{3}$ was largely influenced by the composition of coating layer.

• Analytical Science and Technology
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• v.8 no.1
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• pp.55-62
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• 1995

Tetradentate Schiff base cobalt(II) complexes such as $Co(II)_2-N$, N-bis(salicylidene)-m-phenylendiimine; [$Co(II)_2(SMPD)_2(H_2O)_4$] and $Co(II)_2-N$, N-bis(salicylidene)-p-phenylendiimine: [$Co(II)_2(SPPD)_2(H_2O)_4$], and oxygen adducted cobalt (III) complexes such as [$Co(III)_2O_2(SMPD)_2(Py)_2$] and [$Co(III)_2O_2(SPPD)_2(Py)_2$] in pyridine solutions were synthesized. It was identified that the oxygen adducted cobalt(III) complexes have hexacoordinated octahedral configuration with pyridine and oxygen from the measurement of elemental analysis, AA, IR spectra, and TGA. The redox processes were investigated for the oxygen adducted complexes in 0.1M TEAP-pyridine solution, using cyclic voltammetry on the glassy carbon electrode. The redox processes of oxygen adducted Co(III) complexes result in $$[Co(III)_2-O_2-CO(III)]\rightarrow^{e^-}[Co(III)-O_2-Co(II)]\rightarrow^{e^-}[Co(II)-O_2-Co(II)]\rightleftarrows^{e^-}[Co(II)+Co(II)+O_2{\cdot}^-]\rightleftarrows^{e^-}[Co(II)+Co(I)+O_2{\cdot}^-]\rightleftarrows^{e^-}[Co(I)+Co(I)+O_2{\cdot}^-]$$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.87-87
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• 2002

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.12-12
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.70-71
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• 2001

• Korean Journal of Environmental Biology
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• v.29 no.4
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• pp.251-257
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• 2011

Cobalt is a naturally occurring element found in rocks, soil, water and/or is among the harmful pollutants as generated by industrialized. In the environment, cobalt has two oxidation states, cobalt (II) (Co (II)) and cobalt (III) (Co (III)). If coastal water is contaminated by cobalt, it through the food chain can have an impact on marine ecosystems. Therefore, we examined the gametotoxic and embryotoxic effects of Co (II) at various concentrations (10, 100, 500, 1000, 2500 ppb) in the sea urchin $Hemicentrotus$ $pulcherrimus$. Spawning was induced by injecting 1 mL of 0.5 M KCl into coelomic cavity. Males released white or cream-colored sperms and females released yellow or orange-colored eggs. Experiment was begun within 30 min the collection of both gametes. The fertilization and embryo development rates test were performed for 10 min and 64 h after fertilization, respectively. The fertilization rates in the control condition (not including Co (II)) and experimental group were not significantly changed. The embryo development rates in the control condition were greater than 90% and were significantly decreased with concentration dependent manner. The normal embryogenesis rate was significantly inhibited in exposed to cobalt (II) ($EC_{50}$=71.84 ppb, 95% Cl=16.71-203.36 ppb). The NOEC and LOEC of normal embryogenesis rate were <10 ppb and 10 ppb, respectively. These results suggest that the early embryo stages of $H.$ $pulcherrimus$ have toxic effect at greater than 10 ppb of Co (II) concentration.

• Journal of the Korean Chemical Society
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• v.58 no.5
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• pp.437-444
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• 2014

The electrochemical corrosion and passivation of Co-RDE in borate buffer solution was studied by Potentiodynamic and electrochemical impedance spectroscopy. The mechanisms of both the active dissolution and passivation of cobalt and the hydrogen evolution in reduction reaction were hypothetically established while utilizing the Tafel slope, the rotation speed of Co-RDE, impedance data and the pH dependence of corrosion potential. Based on the EIS data, an equivalent circuit was suggested. In addition, the electrochemical parameters for specific anodic dissolution regions were carefully measured. An induction loop in Nyquist plot measured at the open-circuit potential was observed in the low frequency, and this could be attributed to the adsorption-desorption behavior in the corrosion process.

• Journal of Veterinary Clinics
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• v.8 no.1
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• pp.109-117
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• 1991

This experiment was carrid out to investigate whether Aloe arborescens had a radioprotective effect in cobalt-60 gamma irradiated(600 and 700ra4s) mice. The survival ratio of mice for 30 days and blood pictures were investigated. 1. The survival ratios of 600ra4s gamma Irradiated(dose rate 50rads/min.) in pre-irradiation aloe administered group(A), post-irradiation aloe administered group(B) and control group were 73.3%, 72.3% and 63.3%, and those of 700ra4s groups were 63.3%, 60.0% and 51.7%, respectively. 2. The total leucocyte counts of aloe administered groups were less decreased and more rapidly recovery to normal level than those of control group. 3. The lymphocyte counts were rapidly decreased on the 1st day after irradiation in all experimental groups than those of control group. 4. The recovery effects of total leucocyte counts of pre-irradiation aloe administered groups were superior to those of post-irradiation aloe groups and control group.