• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.339-342
• /
• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.541-541
• /
• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Bulletin of the Korean Chemical Society
• /
• 제32권1호
• /
• pp.263-272
• /
• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• 제36권2호
• /
• pp.37-49
• /
• 2014

Purpose: This study compares the bone formation ability of tricalcium phosphate (TCP) with and without recombinant human bone morphogenetic protein-2 (rhBMP-2) and assesses TCP as a carrier of rhBMP-2. Methods: Bilateral round defects (diameter: 8.0 mm) were formed in the cranium of eight New Zealand white rabbits. The defects were grafted with TCP only (control group) or with rhBMP-2-coated TCP (experimental group). The animals were sacrificed at 1st week, 2nd week, 4th week, and 8th week postoperatively; two rabbits sacrificed each time. The skulls were harvested and subjected to radiographic and histological examination. Results: Radiologic evaluation showed faster bone remodeling in the experimental group than in the control group. Histologic evaluation (H&E, Masson's trichrome stain) showed rapid bone formation, remodeling and calcification in the 1st and 2nd week in the experimental group. Immunohistochemical evaluation showed higher expression rate of osteoprotegerin, receptor activator of nuclear factor ${\kappa}B$ ligand, and receptor activator of nuclear factor ${\kappa}B$ in the experimental group at the 1st and 2nd week than in the control group. Conclusion: rhBMP-2 coated TCP resulted in rapid bone formation, remodeling, and calcification due to rhBMP-2's osteogenic effect. TCP performed properly as a carrier for rhBMP-2. Thus, the use of an rhBMP-2 coating on TCP had a synergic effect on bone healing and, especially, bone remodeling and maturation.

• Bulletin of the Korean Chemical Society
• /
• 제33권11호
• /
• pp.3645-3650
• /
• 2012

Two new blue emitting cationic iridium(III) complexes with two substituted 2-phenlypyridine ligands as main ligands and one 2,2'-biimidazole as an ancillary ligand, $[(L1)_2Ir(biim)]Cl$ (1) and $[(L2)_2Ir(biim)]Cl$ (2), where L1 = 2-(2',4'-difluorophenyl)-4-methylpyridine, L2 = 2-(2',4'-difluoro-3'-trifluoromethylphenyl)-4-methylpyridine and biim = 2,2'-biimidazole, were synthesized for applications in phosphorescent organic light-emitting diodes (PhOLEDs). Their photophysical, electrochemical and electroluminescent (EL) device performances were examined. The photoluminescent (PL) spectra revealed blue phosphorescence in the 450 to 485 nm range with a quantum yield of more than 10%. The iridium(III) compounds studied showed good solubility in organic solvents with no solvatochromism dependent on the solvent polarity. The solution-processed OLEDs were prepared with the configuration, ITO/PEDOT:PSS (40 nm)/mCP:Ir(III) (70 nm)/OXD-7 (20 nm)/LiF (1 nm)/Al (100 nm), by spin coating the emitting layer containing the mCP host doped with the iridium phosphors. The best performance of the fabricated OLEDs based on compound 1 showed an external quantum efficiency of 4.5%, luminance efficiency of 8.52 cd $A^{-1}$ and blue emission with the CIE coordinates (x,y) of (0.16, 0.33).

• Korean Chemical Engineering Research
• /
• 제44권1호
• /
• pp.65-72
• /
• 2006

자력을 이용한 분리기술의 장점을 이용하여 여러 가지 불순물들이 섞여 있는 현탁 용액으로부터 자성입자를 이용하여 목적 단백질만을 얻어낼 수 있는 기술의 가능성에 대하여 알아보고자 하였다. 자성입자를 이용하는 경우에는 (1) 자성입자 표면에 리간드 고정화, (2) ligand(리간드)와 목적 물질과의 특이적 결합, (3) 자력을 이용한 자성입자의 분리, (4) 목적 물질의 탈착 그리고 (5) 자성입자의 재사용 순서로 진행되어 여러 단계의 공정을 단순화시킬 수 있다. 이러한 자성입자를 이용한 방법은 효율성, 단순성, 까다롭지 않은 조건, 자동화의 용이성, 비용의 저렴함으로 인해 관심이 증대되고 있다. 본 연구에서는 표면이 카르복실기로 처리된 자성입자에 IgG 항체를 고정화시킨 후 IgG를 목적 단백질로 하여 이를 분리해내고자 하였다. 이를 위하여 자성입자 표면에 다른 물질과의 비특이적 결합이 일어나지 않을 조건에 대하여 확인해 보았으며, IgG 항체를 배향성 고정화시켜 자성입자가 목적 단백질과 보다 효과적으로 결합하여 목적 단백질인 IgG만을 선택적으로 분리해 낼 수 있는지에 대하여 알아보았다. 높은 pH를 사용할 경우 비특이적 흡착을 줄일 수 있었으며, IgG 항체 고정화된 자성입자를 사용할 경우 목적 단백질인 IgG와 선택적으로 반응함을 알 수 있었다. IgG 항체의 고정화에서 Fc지역 C-terminus에 인접해 있는 탄수화물 부분을 이용하여 배향성을 준 경우, IgG 항체 내의 아민기와 고정화시키는 비배향성 고정화 방법보다 항원과의 결합능력이 약 2배 높았다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.189-189
• /
• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• IMMUNE NETWORK
• /
• 제1권1호
• /
• pp.87-94
• /
• 2001

목적 : 제대혈의 조혈모세포 체외확장 시 조혈세포 증폭과 더불어 조혈미세환경의 변화가 일어난다. 이때 제대혈 $CD34^+$ 세포에서 유래되는 지지세포의 계열 분석조혈성장인자 분비능력을 알아보고 지지세포 증식 조건을 확립하여 효과적인 제대혈의 체외증폭을 제시하고자 하였다. 방법 : 제대혈부터 $CD34^+$ 세포를 분리하여 실험에 사용하였다. 무혈청배지에서 각종 조혈성장인자를 다양한 조합으로 첨가하여 배양하였고 증식정도는 현미경으로 관찰하여 배양용기를 점유한 면적 비율로 계산하였다. 세포외간질 단백의 효과를 분석하기 위하여 collagen S, fibronectin, laminin 및 poly-L-ly sine를 미리 coating한 용기에 배양하여 분석하였다. 제대혈 $CD34^+$ 세포를 조혈성장인자의 첨가 없이 3주간 액체배양하였다. 배양 시, 1주, 2주 및 3주에 상층액을 얻어 $-80^{\circ}C$에 보관하였다가 한꺼번에 IL-3, IL-6, GM-CSF, IL-$1{\beta}$ 및 TNF-$\alpha$등을 ELISA 방법으로 내부적으로 분비되는 량을 측정하였다. 분화된 지지세포의 계열을 분석하기 위해 E-selectin, VCAM-1, ICAM-1, PECAM-1, vWF, vimentin 및 CD 14 항체를 이용하여 면역화학염색 후 형광현미경으로 관찰하였다. 결과 : 제대혈 $CD34^+$ 세포 체외증폭시키는 과정에서 배양 4일에 지지세포가 출현하기 시작하여 7-10일이 지나면서 증식하기 시작하였고 14-2 1일 경에 서로 뭉치는 양상을 보여주었다. 제대혈 $CD34^+$ 세포 배양하면서 내부적으로 분비되는 GM-CSF, IL-6의 측정치는 시간이 지남에 따라 증가되었다. 제대혈 $CD34^+$ 세포 체외확장 시 지지세포의 증식 정도는 TPO+FL+SCF+LIF의 조합의 조혈성장인자가 첨가되었을 때 그리고 세포외간질 단백 성분 중 1% poly-L-lysine으로 처리한 경우 가장 효과적이었다. 결론 : 체외 증폭시 제대혈 $CD34^+$ 세포로부터 지지세포가 나타났으며 적절한 조혈성장인자의 첨가나 세포외간질 단백의 첨가에 의해 증폭될 수 있다.