• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.120-125
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• 2007

The microstructure, mechanical properties and melting range of Ni-Cr-Mo based alloys were investigated to develop Be-free Ni-Cr-Mo base dental alloys for Porcelain-Fused-to-Metal Firing(PFM). All as-cast alloys showed dendritic structure. Rockwell hardness of 20Cr7Mo was increased with addition of Si and Ti. On the contrary, it was decreased with addition of Co. The duplex alloying elemental addition such as 3Co + xTi, 2Si + xCo and 2Si + xTi to 20Cr7Mo resulted in much increase of hardness. Rockwell hardness and compressive strength for 20Cr3CoSiTi or 17Cr6CoSiTi alloy that add Si-Ti had similar values compared to the commercial alloys. Melting range for 20Cr3CoSiTi and 17Cr6CoSiTi alloy that add Si-Ti showed similar or lower than commercial alloys. In conclusion, 20Cr3CoSiTi and 17Cr6CoSiTi alloys can be applied for commercial use.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.39-44
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• 2012

Nanopowders of TiCo were synthesized from Ti and Co by high energy ball milling. Highly dense nanostructured TiCo compounds were consolidated at low temperature by pulsed current activated sintering within 3 minutes from the mechanical synthesis of the powders (TiCo) and horizontal milled Ti+Co powders under 100 Mpa pressure. This process allows very quick densification to near theoretical density and prohibits grain growth in nanostructured materials. The grain sizes of the TiCo compounds were calculated. Finally, the average hardness values of the nanostructured TiCo compounds were investigated.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.3
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• pp.253-261
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• 2005

Catalytic wet oxidation of ppm levels of trichloroethylene (TCE) in water has been conducted using $TiO_2$-supported cobalt oxides at a given temperature and weight hourly space velocity. 5% $CoO_x/TiO_2$ might be the most promising catalyst for the wet oxidation at $36^{\circ}C$ although it exhibited a transient behavior in time on-stream activity. Not only could the bare support be inactive for the wet decomposition reaction, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. Characterization of the $CoO_x$ catalyst by acquiring XPS spectra of both fresh and used Co surfaces gave different surface spectral features of each $CoO_x$. Co $2p_{3/2}$ binding energy of Co species exposed predominantly onto the outermost surface of the fresh catalyst appeared at 781.3 eV, which is very similar to the chemical states of $CoTiO_x$ such as $Co_2TiO_4$ and $CoTiO_3$. The spent catalyst possessed a 780.3 eV main peak with a satellite structure at 795.8 eV. Based on XPS spectra of reference Co compound, the TCE-exposed Co surfaces could be assigned to be in the form of mainly $Co_3O_4$. XRD measurements indicated that the phase structure of Co species in 5% $CoO_x/TiO_2$ catalyst even before reaction is quite comparable to the diffraction lines of external $Co_3O_4$ standard. A model structure of $CoO_x$ present on titania surfaces would be $Co_3O_4$, encapsulated in thin-film $CoTiO_x$ species consisting of $Co_2TiO_4$ and $CoTiO_3$, which may be active for the decomposition of TCE in a flow of water.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.7-11
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• 2017

The extended $H{\ddot{u}}ckel$ method is employed to analyze the interaction of carbon monoxide with the TiC(001) surfaces, both perfect and containing carbon vacancies. CO exhibits a similar ${\sigma}$-donation interaction for both $Ti_{25}C_{25}$ and $Ti_{25}C_{23}$ clusters, as deduced from the fact that the populations of the CO $5{\sigma}$ orbital are identical upon adsorption, but it bonds more strongly with the $Ti_{25}C_{23}$ than with the $Ti_{25}C_{25}$ because the metal d electron density in $Ti_{25}C_{23}$ provides ${\pi}$ back-bonding interactions with CO that are absent in $Ti_{25}C_{25}$. This work suggests that a difference in reactivity toward CO of stoichiometric TiC and TiC with carbon defects is connected with the occupancy of $2{\pi}^*$ orbitals that leads to a significant weakening of the C-O bond.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.257-269
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• 1995

The TiC-Co/Al reaction-sintered products were prepared by the infiltration of various Co/Al metal mixture into the preform, and their microstructure, phases, and mechanical properties were investigated. With increasing the atomic ratio of Co/Al, tiC grain shape was changed from spherical to platelet particles, and the grain size increased. The crystalline phases found in the liquid matrix formed by the infiltration of Co/Al metal mixture were determined to be Al5Co2 and AlCo by EDS and XRD, and the two crystalline phases were located dominantly between TiC grains, when the Co/Al atomic ratio was lower than an unity. There was a tendency that the density, bending strength and fracture toughness increase with Co/Al atomic ratio until the infiltrated metal was 100% Co. The maximum value was achieved by the composition containing 100% Co infiltrated metal. The Vickers hardness decreased as Co/Al atomic ratio increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.30-34
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• 2010

$CoSb_3$-based skutterudite compounds are promising candidates as thermoelectric (TE) materials used in intermediate temperature region. In this study, sintering of $CoSb_3$ powder and joining of $CoSb_3$ to copper-molybdenum electrode have been simultaneously performed by spark plasma sintering technique. The Ti foil was used for preventing the diffusion of copper into $CoSb_3$ and the Cu : Mo = 3 : 7 Vol. ratio composition was selected by the consideration of thermal expansion coefficients. The insertion of Ti interlayer between Cu-Mo and $CoSb_3$ was effective to join $CoSb_3$ to Cu-Mo by forming an intermediate layer of $TiSb_2$ at the Ti-$CoSb_3$ boundary. However, the formation of TiSb and TiCoSb intermediate layers deteriorated the joining properties by the generation of cracks in the interface of intermediate layer/$CoSb_3$ and intermediate/intermediate layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.17-22
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• 2000

A quaternary alloy film of $CoCr_{16.2}Pt_{10.8}Ta_4$was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.

• Korean Journal of Materials Research
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• v.6 no.9
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• pp.861-870
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• 1996

Co 단일층과 Co/Ti 이중층으로부터 형성된 코발트 실리사이드를 최종 막의 구조와 에피텍셜 성장 측면에서 조사하였다. Co 단일층은 그 두께와는 관계없이 전체 막이 CoSi2로 변화된 반면에, Co/Ti 이중층 구조에서는 Co와 Ti 막의 두께비가 최종막 구조에 상당한 영향을 주었다. 그리고 CoSi2막의 에피 성장이 Co 단일층에서 보다는 Co/Ti 이중층에서 보다 용이하였다.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.808-816
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• 1996

(100) Si 기판위에 전자 빔 증착법을 이용하여$ 90\AA$두께의 Ti과 $120\AA$두께의 Co를 순차적으로 증착시켰다. 그 후 질소분위기하의 $350-900^{\circ}C$온도구간에서 급속열처리함으로써 (100) Si 기판위의 Co/Ti 이중 박막의 실리사이드화 반응이 일어나게 했으며 이를 XRD, AES, TEM을 이용하여 분석하였다. $500^{\circ}C$이하의 온도에서는 Co원자들이 Ti층쪽으로 빠르게 확산하여 Si와 반응하기 이전에 Ti원자들과 상호 혼합되어 어떠한 실리사이드도 형성되지 않았다. $500^{\circ}C$에서 열처리된 시편의 고분해능전자현미경 영상을 통해 Co-Ti 혼합층과 실리콘 기판과의 계면에서 (100)Si 기판과 정합관계를 가지는 CoSi2가 형성되었음을 확인했다. $600^{\circ}C$열처리에 의해 Co-Ti-Sitka성분 실리사이드가 형성되기 시작하였으며, 형성된 삼성분 실리사이드는 Ti의 out-diffusion에 의해 $900^{\circ}C$ 이상의 온도에서는 불안정하였다. Co/Ti이중 박막에 의해 형성된 CoSi2는 실리콘 기판과 평탄한 계면을 가지며 실리콘 기판에 대해 (100)우선성장방위를 가졌다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.61-61
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• 2000

Device의 고성능화를 위하여 소자의 고속화, 고집적화가 가속됨에 따라 SALICIDE Process가 더욱 절실하게 요구되고 있다. 이러한 SALICIDE Process의 재료로써는 metal/silicide 중에서 비저항이 가장 낮은 TiSi2(15-25$\mu$$\Omega$cm), CoSi2(17-25$\mu$$\Omega$cm)가 일반적으로 많이 연구되어 왔다. 그러나 Ti-silicide의 경우 Co-silicide는 배선 선폭의 감소에 따른 면저항 값의 변화가 작으며, 고온에서 안정하고, 도펀트 물질과 열역학적으로 안정하여 화합물을 형성하지 않는다는 장점이 있으마 Ti처럼 자연산화막을 제거할 수 없어 Si 기판위에 자연산화막이 존재시 균일한 실리사이드 박막을 형성할 수 없는 단점등을 가지고 있다. 본 연구에서는 Ti Capping layer 에 의한 균일한 Co-silicide의 형성을 일반적인 Si(100)기판과 SCl 방법에 의하여 chemical Oxide를 성장시킨 Si(100)기판의 경우에 대하여 연구하였다. 스퍼터링 방법에 의해 Co를 150 증착후 capping layer로써 TiN, Ti를 각각 100 씩 증착하였다. 열처리는 RTP를 이용하여 50$0^{\circ}C$~78$0^{\circ}C$까지 4$0^{\circ}C$ 구간으로 N2 분위기에서 30초 동안 열처리를 한후, selective metal strip XRD, TEM의 분석장비를 이용하여 관찰하였다. lst RTP후 selective metal strip 후 면저항의 측정과 XRD 분석결과 낮은 면저항을 갖는 CoSi2로의 상전이는 TiN capping과 Co 단일박막이 일반적인 Si(100)기판과 interfacial oxide가 존재하는 Si(100)기판위에서 Ti capping의 경우보다 낮은 온도에서 일어났다. 또한 CoSi에서 CoSi2으로 상전이는 일반적인 Si(100)기판위에서 보다 interfacial Oxide가 존재하는 Si(100)기판 위에 TiN capping과 Co 단일박막의 경우 열처리 후에도 Oxide가 존재하는 불균인한 CoSi2박막을 관찰하였으며, Ti capping의 경우 Oxise가 존재하지 않는 표면과 계면이 더 균일한 CoSi2 박막을 형성 할 수 있었다.